12W 92 Search Results

transistor SMD 12W

Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

VJ1206Y104KXAT

Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion BSIP10-12W BSMT10-12W Series 10A SIP & SMT 12V Input DC-DC Converters Features • • • • • • • • • • Industry standard pin out High efficiency to 95%

500W dc/dc converter schematic

Abstract: btcpower BSIP16-12 step down 500w switching
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion BSIP16-12W BSMT16-12W Series 16A SIP & SMT 12V Input DC-DC Converters Features • • • • • • • • • • • • Industry standard pin out High efficiency to 94%

500W dc/dc converter schematic

Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion BSIP20-12W BSMT20-12W Series 20A SIP & SMT 12V Input DC-DC Converters Features • • • • • • • • • • • • Industry standard pin out High efficiency to 94%

ZB4CS-960-12W

Abstract: ZB4CS-960-12W-S
Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω 820 to 960 MHz Maximum Ratings Operating Temperature Storage Temperature ZB4CS-960-12W Features -55°C to 90°C -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. • high power, up to 12W input power

Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω 820 to 960 MHz Maximum Ratings Operating Temperature Storage Temperature ZB4CS-960-12W Features -55°C to 90°C -55°C to 100°C Coaxial Connections • high power, up to 12W input power • low insertion loss, 0.3 dB typ.

LX1708

Abstract: 1N5817 LX1708ILQ TP10 12W 04 SMD MOSFET stereo audio amplifier 4 w 4 ohm Stereo Power Amplifier Circuit Diagram
Contextual Info: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Filter Free Operation ƒ 12W +12W Output Power @ 4Ω load: THD+N < 1% ƒ High Efficiency > 85% ƒ Full Audio Bandwidth: 20Hz to 20kHz ƒ Low Distortion < 0.4% @ 30%

AT27273

Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY

Contextual Info: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET ̇ Filter Free Operation ̇ 12W +12W Output Power @ 4Ω load: THD+N < 1% ̇ High Efficiency > 85% ̇ Full Audio Bandwidth: 20Hz to 20kHz ̇ Low Distortion < 0.4% @ 30% Max Power, 1kHz

ZB4CS-960-12W

Abstract: ZB4CS-960-12W-S
Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω 820 to 960 MHz Maximum Ratings Operating Temperature Storage Temperature ZB4CS-960-12W Features -55°C to 90°C -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. • high power, up to 12W input power

Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω 820 to 960 MHz Maximum Ratings Operating Temperature Storage Temperature ZB4CS-960-12W Features -55°C to 90°C -55°C to 100°C • high power, up to 12W input power • low insertion loss, 0.3 dB typ. • high isolation, 28 dB typ.

Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω 820 to 960 MHz Maximum Ratings Operating Temperature Storage Temperature ZB4CS-960-12W Features -55°C to 90°C -55°C to 100°C • high power, up to 12W input power • low insertion loss, 0.3 dB typ. • high isolation, 28 dB typ.

ZB4CS-960-12W

Abstract: ZB4CS-960-12W-S
Contextual Info: Coaxial High Power Combiner 4 Way-0° 50Ω ZB4CS-960-12W 820 to 960 MHz Maximum Ratings Features Operating Temperature -55°C to 90°C Storage Temperature -55°C to 100°C • • • • high power, up to 12W input power low insertion loss, 0.3 dB typ. high isolation, 28 dB typ.

Contextual Info: SRL20A-12W Series Miniature, Surface Mount 20A Output, Switching POL Regulators Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

Contextual Info: SRS10A-12W Series Miniature, Non-isolated 10A Output, Switching POL Regulators Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

Contextual Info: SRS20A-12W Series Miniature, Non-isolated 20A Output, Switching POL Regulators Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

HPQ-12W

Contextual Info: 2 Way-90° Power Splitter/Combiner HPQ-12W Typical Performance Data TEST CONDITIONS: INPUT POWER = 0dBm @Temperature = +25°C FREQ. INSERTION LOSS dB (MHz) 400 500 600 700 800 900 920 940 960 980 1000 1020 1040 1060 1080 1100 1120 1130 1140 1160 1180 1200

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

Galvanic isolation

Contextual Info: Product catalogue | Functional Electronics | Power supplies | Primary switched-mode power supply unit | Connect Power single-phase WAVESERIES | WAVEPOWER 12 W General ordering data Order No. Part designation Version EAN Qty. 9918840024 CP SNT 12W 24V 0.5A

a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor