12V 30A DIODE Search Results

MIL-STD-810-D

Abstract: IPMB Address IPMI "satellite management controller"
Contextual Info: cPCI325D SERIES 325 Watt, 3U x 8HP CompactPCI SELECTION GUIDE Model Number Output Current Power 3.3V 12V -12V cPCI325D-1 325W 30A 40A 5A 1A Consult Factory No cPCI325D-1C 325W 30A 40A 5A 1A Active Yes INPUT CHARACTERISTICS Parameter Conditions Input operating voltage

Contextual Info: cPCI325D-10xC Series 325 Watt, 3U x 8HP CompactPCI SELECTION GUIDE Model Number Output Current Power Modification 5V 3.3V 12V -12V CPCI325D-101C 325W 30A 40A 5A 1A Customer PN in FRU Yes CPCI325D-10xC 325W 30A 40A 5A 1A Customer defined Yes INPUT CHARACTERISTICS

500w switching supply

Abstract: 500w dc to dc supply PICMG 2.11-compliant 47-pin connector 217F
Contextual Info: cPCI500 Series 500W 6Ux4HP DC/DC CompactPCI Power Supply SELECTION GUIDE S Model Number Power Output Current 5V 3.3V 12V -12V IPMI Ish1 CPCI500D-1 C 500W 55A Y 11A 1.7A N P No CPCI500D-2 C 500W 30A N 11A 1.7A N P No C CPCI500D-3 500W 30A N 11A 1.7A Y A

normal diode

Abstract: B332 PICMG 2.11-compliant 47-pin connector
Contextual Info: cPCI-D-3U-300C Series 300W 3Ux8HP DC/DC CompactPCI SELECTION GUIDE Output Current1 Model Number Power CPCI-D-3U-300C 300W 5V 3.3V 12V -12V 30A 40A 5A 0.5A For full details go to www.murata-ps.com/rohs Yes Yes INPUT CHARACTERISTICS Parameter Conditions

B332

Contextual Info: cPCI-D-3U-300C Series 300W 3Ux8HP DC/DC CompactPCI SELECTION GUIDE Output Current1 Model Number Power CPCI-D-3U-300C 300W 5V 3.3V 12V -12V 30A 40A 5A 0.5A For full details go to www.murata-ps.com/rohs Yes Yes INPUT CHARACTERISTICS Parameter Conditions

PICMG 2.11-compliant 47-pin connector

Abstract: MARK A03
Contextual Info: cPCI-A-3U-300C Series 300W 3Ux8HP AC/DC CompactPCI SELECTION GUIDE Output Current1 Model Number Power CPCI-A-3U-300C 300W 5V 3.3V 12V -12V 30A 40A 5A 0.5A For full details go to www.murata-ps.com/rohs Yes Yes INPUT CHARACTERISTICS Parameter Conditions

Contextual Info: Technical Specification BQ60120HEx30 35-75V 12V 30A 360W 2250V dc Half-brick Input Output Current Power Isolation DC-DC Converter The BusQor BQ60120HEx30 Exa series converter is a next-generation, board-mountable, isolated, wide input, regulated, fixed switching frequency DC/DC converter that

APTS030A0X3-SRPHZ

Abstract: APTS030 18 mega ohms resistor APTS030A0X3 ipc-9592
Contextual Info: Data Sheet March 16, 2010 12V Mega TLynxTM : Non-Isolated DC-DC Power Modules: 6.0Vdc – 14Vdc input; 0.8 to 3.63Vdc Output; 30A Output Current Features RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC

Contextual Info: Data Sheet March 9, 2010 12V Mega TLynxTM : Non-Isolated DC-DC Power Modules: 6.0Vdc – 14Vdc input; 0.8 to 2.75Vdc Output; 30A Output Current Features RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC

APTS030A0X3

Abstract: APTS030A0X3-SRPHZ IPC-9592 4TPF470ML
Contextual Info: Data Sheet November 11, 2010 12V Mega TLynxTM : Non-Isolated DC-DC Power Modules: 6.0Vdc – 14Vdc input; 0.8 to 3.63Vdc Output; 30A Output Current Features RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC

30N60A4D

Contextual Info: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30n60a4d

Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
Contextual Info: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A4

Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
Contextual Info: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A4D

Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
Contextual Info: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the

7MBR30SA060

Abstract: DC 300V to 15V converter igbt 300V 30A
Contextual Info: 7MBR30SA060 IGBT Modules IGBT MODULE S series 600V / 30A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: 7MBR30SA060 IGBT Modules IGBT MODULE S series 600V / 30A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings

Contextual Info: 7MBR30SA060 IGBT Modules IGBT MODULE S series 600V / 30A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information IXYJ30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

IXYH30N120C3D1

Contextual Info: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

RURP3060

Abstract: RURP3010 RURP3015 RURP3020 RURP3040 RURP3050
Contextual Info: RURP3040, RURP3050, RURP3060 S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-220AC ANODE • +175oC Rated Junction Temperature CATHODE CATHODE (FLANGE)

IRG7PH42UD1PBF

Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

Contextual Info: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab Short Circuit SOA Capability VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings