12S1C Search Results

Contextual Info: 9 0 9 7 2 5 0 TOSHIBA <DISCRETE/OPTO 39C 0 2 3 1 7 0 T -”cP «S'-/5' BI-DIRECTIONAL TRIODE THYRISTOR TRIAC) TOSHIBA -CDISCRETE/OPTO} 400V 10A SM10G14 I*ï » F | TOTTESO 0 0 0 5 3 1 7 3 Unit in mm ¿25.0MAX. 1Í2I.0MAX. M A X IM U M RATINGS C H A R A C T E R IS T IC

JDH3D01S

Contextual Info: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)

memory interfacing to mp 8085 8086 8088

Abstract: 82c684cj 82c684 block diagram of processor 80486 intel 8085 and motorola 6800 1C16 LS 74LS138 function and details in microprocessor 8085
Contextual Info: XR -82C 684 C Y V I B t / V i r \ I C M O S Q uad C hannel U AR T Q U A R T August 1997-2 FEATURES • Four Full-Duplex, Independent Channels • Two Multi-function 16-bit Counter/Timers • Asynchronous Receiver and Transmitter • • Quadruple-Buffered Receivers and Transmitters

JDH3D01S

Contextual Info: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature

Contextual Info: 1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications • • Unit: mm Low forward voltage VF = 0.23 V typ. @ IF = 5 mA Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C)

961001EAA2

Contextual Info: 1SS362 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS362 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp = 0.97V Typ. Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance

1ss362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)

JDH3D01FV

Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads e.g. the application of high

Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 1 0.4

1SS422

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V typ. @IF = 5 mA • Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C) Characteristics

JDH3D01S

Contextual Info: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature

1SS362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)

diode e 1205

Abstract: JDH3D01FV
Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection Unit: mm 0.22±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 0.8±0.05 1.2±0.05 Lead Pb free 0.32±0.05 Small package 2 3 Symbol Rating Unit Reverse voltage VR 4 V Forward current

Contextual Info: 1SS362 SILICON EPITAXIAL PLANAR TYPE U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage F ast Reverse Recovery Time Small Total Capacitance i.6± M o.sto.i V f = 0.97V Typ. trr = 1.6ns (Typ.) CT = 0.5pF (Typ.)

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.97V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)

Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range Note: Using continuously under heavy loads e.g. the application of high

Contextual Info: 1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.97V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)

1SS423

Contextual Info: 1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

JDH3D01FV

Contextual Info: JDH3D01FV 東芝ダイオード シリコンエピタキシャルショットキバリア形 JDH3D01FV ○ UHF バンド受信ミキサ用 号 定 格 単位 逆 電 圧 VR 4 V 順 電 流 IF 25 mA 接 合 温 度 Tj 125 °C 保 存 温 度 Tstg -55～125

JDH3D01S

Contextual Info: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection • Unit:mm Small Package Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse Voltage VR 4 V Forward current IF 25 mA 1 1. ｱﾉｰﾄﾞ 1

JDH3D01FV

Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads e.g. the application of high