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    Rochester Electronics LLC LD6815TD-12H,125

    IC REG LINEAR 1.2V 150MA 5-TSOP
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    DigiKey LD6815TD-12H,125 Bulk 49,448 1,299
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    Tri-Mag Inc L6R12H-120

    AC/DC WALL MOUNT ADAPTER 12V 12W
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    DigiKey L6R12H-120 Box 1,344 1
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    Microchip Technology Inc PIC32MX470F512H-120-PT

    IC MCU 32BIT 512KB FLASH 64TQFP
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    DigiKey PIC32MX470F512H-120-PT Tray 571 1
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    Microchip Technology Inc PIC32MX470F512H-120-MR

    IC MCU 32BIT 512KB FLASH 64QFN
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    DigiKey PIC32MX470F512H-120-MR Tube 560 1
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    TE Connectivity KHAU-17A12H-120

    RELAY GEN PURPOSE 4PDT 5A 120V
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    DigiKey KHAU-17A12H-120 Bulk 211 1
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    Mouser Electronics KHAU-17A12H-120 329
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    TTI KHAU-17A12H-120 Tray 25 25
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    TME KHAU-17A12H-120 250 5
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    IBS Electronics KHAU-17A12H-120 114 9
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    Master Electronics KHAU-17A12H-120 364
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    Neutron USA KHAU-17A12H-120 50
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    12H12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TB230P-12H12


    Original
    TB230P-12H12 PDF

    5SLX12E1200

    Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


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    12H1273 CH-5600 5SLX12E1200 PDF

    Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


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    12H1262 CH-5600 PDF

    MJ86

    Abstract: 57 A
    Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


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    12H1280 CH-5600 MJ86 57 A PDF

    Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


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    12H1280 CH-5600 PDF

    Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


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    12H1280 CH-5600 PDF

    Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


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    12H1280 5SYA1307-01 CH-5600 PDF

    Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications


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    12H1280 5SYA1307-03 CH-5600 PDF

    Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


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    12H1200 5SYA1638-01 CH-5600 PDF

    Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


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    12H1274 CH-5600 PDF

    12H562

    Abstract: panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112
    Contextual Info: Film Capacitors High-Voltage Metallized Polypropylene ECW-H Series This series is designed for applications where high frequency, high pulse voltage and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise


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    1000Vp 75kHz 1250VDC) 1200Vp_ 1600VDC) 1500Vp 2500VDC) 800VDC, 12H562 panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112 PDF

    NF 034

    Abstract: IGBT abb datasheets 12K1201
    Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


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    12K1201 5SYA1635-01 CH-5600 NF 034 IGBT abb datasheets 12K1201 PDF

    Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


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    12E1200 CH-5600 PDF

    Contextual Info: * * J Œ X 5 ^ - f X K High-Voltage Metallized Polypropylene Film Capacitor Rating & Dimensions Cap. mF Part No. ÆfëmEE a 800VDC, .0082 ü 21.0 // .0091 8113DZ(DZR) 8I2 3 D Z (G Z R ) 'pmax L max Rated volt. ECW H 8822GZ(DZR) u 8 9 I2 D Z (D Z R ) a


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    800VDC, 8113DZ 8822GZ 8103DZ 33tiF 9000M 3000MQâ 100VDC Q-K474K PDF

    Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


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    12K1201 CH-5600 PDF

    Deutsch 057-0750-05

    Abstract: AN850823B ABS1571-01B01 NSA935401-05
    Contextual Info: BRANCHE CONNECTEURS AEROMILITAIRES D-EASY Cable and wire seals D-EASY Introduction / Présentation D-EASY 03 D-EASY 02 D-EASY 01 D-EASY 04 D-EASY 12 D-EASY 05 • Product summary ■ A removable seal fitting for bundle and wire applications which allow rework of the seal in situ without wire removal.


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