12H12 Search Results
12H12 Price and Stock
Taiwan Semiconductor TSUP12H120HDIODE SCHOTTKY 120V 12A TO277A |
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TSUP12H120H | Digi-Reel | 5,730 | 1 |
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TSUP12H120H | 5,800 |
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TSUP12H120H | 1 |
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TSUP12H120H | 16 Weeks | 6,000 |
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Eaton Bussmann CC12H12A-TRFUSE BOARD MOUNT 12A 32VDC 1206 |
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CC12H12A-TR | Cut Tape | 2,547 | 1 |
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CC12H12A-TR | Cut Tape | 420 | 5 |
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CC12H12A-TR | 3,000 |
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CC12H12A-TR | 39,000 |
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CC12H12A-TR | 3,000 |
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PEI-GENESIS BACC63BV12H12PNCONN RCPT MALE 12POS GOLD CRIMP |
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BACC63BV12H12PN | Bulk | 567 | 1 |
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PEI-GENESIS BACC63BP12H12PNCONN PLUG MALE 12POS GOLD CRIMP |
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BACC63BP12H12PN | Bulk | 492 | 1 |
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PEI-GENESIS BACC63BP12H12PNHCONN PLG HSG MALE 12POS INLINE |
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BACC63BP12H12PNH | Bulk | 492 | 1 |
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12H12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TB230P-12H12 |
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TB230P-12H12 | |
5SLX12E1200Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area |
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12H1273 CH-5600 5SLX12E1200 | |
Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage |
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12H1262 CH-5600 | |
MJ86
Abstract: 57 A
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12H1280 CH-5600 MJ86 57 A | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12H1280 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12H1280 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide |
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12H1280 5SYA1307-01 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications |
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12H1280 5SYA1307-03 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions |
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12H1200 5SYA1638-01 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area |
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12H1274 CH-5600 | |
12H562
Abstract: panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112
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OCR Scan |
1000Vp 75kHz 1250VDC) 1200Vp_ 1600VDC) 1500Vp 2500VDC) 800VDC, 12H562 panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112 | |
NF 034
Abstract: IGBT abb datasheets 12K1201
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12K1201 5SYA1635-01 CH-5600 NF 034 IGBT abb datasheets 12K1201 | |
Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 |
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12E1200 CH-5600 | |
Contextual Info: * * J Œ X 5 ^ - f X K High-Voltage Metallized Polypropylene Film Capacitor Rating & Dimensions Cap. mF Part No. ÆfëmEE a 800VDC, .0082 ü 21.0 // .0091 8113DZ(DZR) 8I2 3 D Z (G Z R ) 'pmax L max Rated volt. ECW H 8822GZ(DZR) u 8 9 I2 D Z (D Z R ) a |
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800VDC, 8113DZ 8822GZ 8103DZ 33tiF 9000M 3000MQâ 100VDC Q-K474K | |
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Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions |
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12K1201 CH-5600 | |
Deutsch 057-0750-05
Abstract: AN850823B ABS1571-01B01 NSA935401-05
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