12E1200 Search Results
12E1200 Price and Stock
| Susumu Co Ltd CPA2512E1200FS-T10RES SMD 120 OHM 1% 16W 2512 | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | CPA2512E1200FS-T10 | Cut Tape | 2,142 | 1 | 
 | Buy Now | |||||
|   | CPA2512E1200FS-T10 | 524 | 
 | Buy Now | |||||||
|   | CPA2512E1200FS-T10 | Reel | 1,000 | 
 | Buy Now | ||||||
| Vishay Intertechnologies PCAN2512E1200BBT0Res Thin Film 2512 120Ohm 0.1% 6W ?25ppm/?C Molded T/R - Tape and Reel (Alt: PCAN2512E1200BBT0) | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | PCAN2512E1200BBT0 | Reel | 13 Weeks | 100 | 
 | Buy Now | |||||
| Vishay Intertechnologies PHP02512E1200BBTFPHP02512 25PPM 120 0.1% B TF - Tape and Reel (Alt: PHP02512E1200BBTF) | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | PHP02512E1200BBTF | Reel | 2,000 | 
 | Get Quote | ||||||
| Vishay Intertechnologies P-2512E1200BBT0P-2512 25PPM 120 0.1% B T0 - Tape and Reel (Alt: P-2512E1200BBT0) | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | P-2512E1200BBT0 | Reel | 13 Weeks | 100 | 
 | Buy Now | |||||
|   | P-2512E1200BBT0 | 
 | Get Quote | ||||||||
| Vishay Intertechnologies P-2512E1200BBTSRes Thin Film 2512 120Ohm 0.1% 1W ?25ppm/?C Molded T/R - Bulk (Alt: P-2512E1200BBTS) | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | P-2512E1200BBTS | Bulk | 13 Weeks | 100 | 
 | Buy Now | |||||
|   | P-2512E1200BBTS | 
 | Get Quote | ||||||||
12E1200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 | Original | 12E1200 CH-5600 | |
| Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 | Original | 12E1200 CH-5600 | |
| 12E1200Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 | Original | 12E1200 CH-5600 12E1200 | |
| MJ86
Abstract: 57 A 
 | Original | 12H1280 CH-5600 MJ86 57 A | |
| Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage | Original | 12M1274 CH-5600 | |
| Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions | Original | 12M1252 5SYA1623-01 CH-5600 | |
| Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values | Original | 12H1280 CH-5600 | |
| Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values | Original | 12H1280 CH-5600 | |
| Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions | Original | 12M1273 5SYA1637-00 CH-5600 | |
| Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions | Original | 12H1200 5SYA1638-01 CH-5600 |