12E12 Search Results

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1262 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1628-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

Contextual Info: 12E120 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 12 Load Current Max. (A)1.2 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

IGBT abb

Abstract: 5SLX12E1200
Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

12E12

Abstract: Scans-0017279
Contextual Info: EDISWAN I2EI2 PULSE M O D U LATO R T ET R O D E TENTATIVE G EN ER A L The 12E12 is a Pulse Modulator Tetrode, having a maximum anode dissipation of 60 watts, and a maximum peak anode current of 15 amps. It has an indirectly heated cathode, and is intended for use in Radar equipment.

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: 12E120-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 12 Load Current Max. (A)1.2 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

12E12

Abstract: pulse modulator Scans-0017278
Contextual Info: EDISWAN I2EI2 PULSE M O D U LA T O R TETRODE TEN TA TIV E G EN ERA L The 12E12 is a Pulse M odulator Te tro d e, having a maximum anode dissipation of 60 w atts, and a maximum peak anode c u rre n t of 15 amps. It has an in d irectly heated cathode, and is

12E1200

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

7.1 surround dolby true HD circuit scheme

Abstract: 12v subwoofer amp circuits schematic diagram hdmi to rca BIOS Writers Guide HDMI CONNECTOR SMT 4-Layer PCB Layout Guideline for HDMI Products High Definition Audio Specification simple subwoofer circuit diagram low pass subwoofer circuit diagram audio controller
Contextual Info: Intel I/O Controller Hub 6 ICH6 High Definition Audio / AC ’97 Programmer’s Reference Manual (PRM) July 2004 Document Number: 302349-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY

mcp1703at

Abstract: MCP1703AT-1202E sot23 mark code aly mcp1703at1202 ALY B1 transistor sot-223 package ph code MCP1703A MCP1703AT-3302E 1703A Bb1n
Contextual Info: MCP1703A 250 mA, 16V, Low Quiescent Current LDO Regulator Features: Description: • • • • • • • The MCP1703A is an improved version of the MCP1703 low dropout LDO voltage regulator that can deliver up to 250 mA of current while consuming only

ESC10

Abstract: 12E20 5E8E75 28E15D25 5E15E50 5E28E50 5E5E250 5E6E100 5E6E200 5E8E150
Contextual Info: ACOPIAN SSE D □175b?D 0001135 fiTb • ACO DC -DC C O N V E R TE R S PC BOARD MOUNTING SINGLE & DUAL OUTPUT SHIPPED IN 3 DAYS These versatile DC/DC converters are ideally suited for powering a wide variety of analog and digital circuitry, such as op amps, logic and microprocessors. They may

MJE 13905

Abstract: 2SC5004 NE58219 NE58219-T1 S21E FREE MM 5402 SCHEMATIC f 2630 152.01
Contextual Info: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW

SEMTECH code date MARKING

Abstract: uClamp2511T SLP1006P2T 2511T
Contextual Info: uClamp2511T Low Profile Clamp 1-Line ESD protection PROTECTION PRODUCTS - MicroClamp® Description Features ® The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,

Contextual Info: DC-DC Converters & AC-DC Power Supplies OPTIONAL ENVIRONMENTAL SCREENING All Pico DC-DC Converters and AC-DC Power Supplies are available with high reliability Screening options to insure the maximum quality unit for your system. Select from the list below or call factory for review of your specific applications.

Contextual Info: SERIES E/SE SURFACE MOUNT and PLUG-IN Hi Reliability Miniature Isolated DC-DC Converters Up to 7 Watts Low Profile 0.4" Height! Up to 7 Watts No External Capacitors Required No Heat Sink or Electrical Derating Required This series of unregulated DC-DC converters are produced in an ultra-miniaturized encapsulated

T2140

Abstract: chip die hp transistor 0099E planar*el BF 212 transistor
Contextual Info: HEW LETT-PACKARD/ CflPNTS b lE ]> • 4447584 Whp% H EW LETT mittm PA CK A RD 402 ■HPA Chip Outline1 Features • • • • o o m ? 1! ! AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC