12DBTYP Search Results

Contextual Info: ila H M C 151 MICROWAVE CORPORATION PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 1 - 4 GHz FEBRUARY 1998 Features General Description GAIN: 12dBtyp. The HMC151 is an amplifier with gain con­ trolled with a 5 bit binary word. The magni­ tude of the voltage gain varies linearly with

pa 2030a

Abstract: J1 3007-1 120C 2SC4365 IS211 2T transistor surface mount transistor et 454 I PT 0 0 7N 0 6 N
Contextual Info: SANYO SEMI CONDUCTOR CORP 2 2E D • 7^70713 O ODb ö b l Û T-3N7 2SC4365 * 2018A 3007 Features • Low-voltage operation N P N Epitaxial Planar Silicon Transistor V/U M IX, OSC, Low-Voltage High-Frequency Amp Applications fT=3.0GHz typ V oe = 3V MAG=12dBtyp (VCE=3V,Ic=10mA)

2SK653

Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Contextual Info: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s

FLM6472-12D

Abstract: FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D
Contextual Info: - 136 - & a £ tt € ffl iÉ m ís A ñ * K V * té £ 1 (V) (A) M V P d/P ch * I gss (max) (A) « Vg s (V) (Ta=25cC ) (min) (raax) Vd s (A) (V) (A) (rain) (max) Vd s (V) (V) (V) Id (A) (rain) (S) Vd s (V) Id (A) FLM3742-12D a ± ii C-Band PA GaAs N D

NEc hemt

Abstract: 2SK1953 2SK1963 2SK2043 2SK1951 2SK1952 2SK1954 2SK1958 2SK1959 2SK1960
Contextual Info: - 126 - H f m £ ít % m m « it i A A 5È 1 K V m * * * (V) « fér , R, L (A) * :t * less (max) (A) (W) Vg s (V) (min) (A) SE W (Ta=25‘ C) (min) (max) V d s (V) (V) (V) (max) Vd s (A) (V) (min) (S) (t$ Id (A) Vd s ’ (V) Id (A) 2SK1951 B Ì 'HS PSW, DDC

2SK565

Abstract: 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544
Contextual Info: - 54 - m e tt ÌÈ. £ m & f y * 1 % K ft X £ P d/ Pc h E ft * V MOS N E 900 DSX ±20 2SK539 SW Reg MOS N 900 DSX ±20 IF J ND 12 D S X -15 S ±20 s a 2SK542 NEC i 2SK543 2SK544 2SK545 - f t 2SK546 LN A , t ' f *i*7 SW MOS N E F M Tuner, V H F RF MOS

FLR024FH

Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D

FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)

pa68h

Abstract: YTFP150 PA63H NEC PA63H UPA33A YTF840 YTFP450 UPA50A PA71A pamt
Contextual Info: - 170 - f £ € tt £ m & m it vm * 1 ft h' V $ Vg s * m * fë I* _ P /P (A) * £ X (V) X fr* d r ch (W) (max) (A) Vg s (V) î£ Rî W s (min) (max) V d s (A) (V) (A) (Ta=25*C) « (min) (max) Vd s (V) (V) (V) Id (A) gm (min) (S) Vds (V) Id (A) YTF840

2SK1001

Abstract: 2SK1002 2SK918 2SK990 2SK994 2SK1000 2SK962 2SK976 2SK987 2SK989
Contextual Info: - 78 - f m s tt £ m m m ^ * K 2SK962 £: ft V* V fe i* * (V) ft * (A) M S X P d /P c h ft * (W) (¿E? (A) Vg s (V) W s wiy (A) (min) (max) Vd s (V) (V) (V) sm (min) Vd s (S) {\ l f (V) 1d (A) SW-Reg, USP, DDC MOS N E 900 DSS ±30 S 8 D 2SK963 n r DDC, Motor-D

2SK131

Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Contextual Info: - 34 - f m ít % m £ m A i fr K V Eft * fê Ê * 1 ft * (V) (A) % S ft* P d/ P c h (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) 4# tt (Ta=25eC ) Id (min) (max) V d s (V) (V) (V) (A) (min) (typ) V d s (S) (S) (V) 2SK128 föT LF LN A }

RF-45

Contextual Info: •m l 1.5 11.9 GHz Band Chip Multilayer D.B.MIXER Model No. SLM-170A Equivalent Circuits Shape & Size 3.2 2.0 0.95 0.95 K >K >l ixers [Hl 1 RF LO 2 Ground 3 IF in T I— r 4 Ground 5 Ground 6 4 5 6 Top View >H-t— 0.4 LO(RF) — ♦— K - 0.4 0.4 Side View

Contextual Info: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that performs phase and harmonic compensation on audio signals to accu­ rately reproduce the “rise” section of audio signals that determines the characteristics of the sound, and thus repro­