12DA Search Results

IXYS MEO 450-12DA

Contextual Info: MEO 450-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 453 A trr = 450 ns Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

cd 1691 cp

Abstract: Y3015
Contextual Info: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz

Contextual Info: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A = 450 ns trr Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-12DA 3 1 2 3 Symbol Test Conditions

FLM3742-12D

Abstract: FLM3742-12DA
Contextual Info: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz

FLM5964-12DA

Contextual Info: F, , FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

250-12DA

Contextual Info: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A trr = 450 ns Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-12DA 3 1 2 3 Symbol Test Conditions

Contextual Info: □ IXYS MEA/ MEE / MEK 250-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module TYPE: MEA250-12DA 1 640V 600V Symbol FRMS I <x> Ji2dt 2 MEE250-12DA 3 2 3 1 2 4—4 - 4 , 4 -4 -4 , I 1 l< I »I I i I I M 1 >1 I I I 1 H 1 l< I I 367 260 1480 A

Contextual Info: OIXYS MEO 450-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module V RSM ^RRM 1200V 1200V Symbol • frm s ^favm IFRM Test Conditions 2460 A A A A A A A 6 4 0 453 < 10 ^ S' reP- ratin9> pulse width limited by TVJM TVJ = 150°C TVJ = 45° C TVJ = 150°C

FLM4450-12DA

Contextual Info: FLM4450-12DA fujTtsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: MEO 450-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 453 A = 450 ns trr Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

Contextual Info: • m m T , y riy SH kll «JL JL rn •JIm ; Fast Recovery Epitaxial Diode FRED Modules MEA 140-12DA IFAVM MEE 140-12DA v RRM MEK 140-12DA t 137 A 1200 V 450 ns Preliminary data Type MEA 140-12DA v„ v 1200 1200 1 MEE 140-12DA MEK140-12DA 2 -j I- j I-j

7785-12DA

Contextual Info: F L M 7785-12DA Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

d3015

Abstract: 4450-12DA
Contextual Info: F L M 4450-12DA internally Matched Power GaAs ¡ E i s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C

FLM6472-12d

Abstract: FLM6472-12DA
Contextual Info: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F| , FLM7785-12DA r UJ11 bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: r!add = 32% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

FLM7785-12DA

Contextual Info: FLM7785-12DA F| « P . Internally M a tc h e d P o w e r G aA s F E T s r U J I 1j U FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.7 ~ 8.5GHz

FLM3742-12DA

Contextual Info: n FLM3742-12DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

FLM6472-12D

Abstract: SCL 1058 FLM6472-12DA
Contextual Info: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM7177-12D

Abstract: FLM7177
Contextual Info: çP FLM7177-12DA lUJI I j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM 5964 12DA - Internally Matched Power ìaAs F ET s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Hem SymlxM Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 w Total Power D issipation pt Tc = 25°C Storage Temperature

Contextual Info: LM340-12DA Linear ICs Fixed Positive Voltage Regulator status Military/High-RelN Output Voltage Nominal V 12 Load Current Max. (A)1.5 Tolerance (%) Drop-Out Volt Max.2.0 P(D) Max. (W)15 Supply Voltage Maximum (V)19 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

260-12DA

Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEO 260-12DA iFAVM = 262 A VRRM = 1200 V tir Symbol Test Conditions ^FRMS ^FAVM u TVJ = 125°C; Ts = 65°C TVJ = 125°C; Ts = 65°C; rectangular, d = 0.5 TVJ = 125°C; Ts = 65°C 371 262 1050 A A A ^FSM TVJ = 45°C;

FLM7177-12DA

Contextual Info: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

GaAs FETs

Contextual Info: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature