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    12CN10L Search Results

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    12CN10L Price and Stock

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    Infineon Technologies AG IPP12CN10LGXKSA1

    MOSFET N-CH 100V 69A TO220-3
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    DigiKey IPP12CN10LGXKSA1 Tube
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    Avnet Americas IPP12CN10LGXKSA1 Tube 500
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    Rochester Electronics IPP12CN10LGXKSA1 22,640 1
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    • 100 $0.88
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    Infineon Technologies AG IPS12CN10LGBKMA1

    MOSFET N-CH 100V 69A TO251-3
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    Vyrian IPS12CN10LGBKMA1 916
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    Rochester Electronics LLC IPP12CN10LGXKSA1

    IPP12CN10 - 12V-300V N-CHANNEL P
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    DigiKey IPP12CN10LGXKSA1 Bulk 328
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    Infineon Technologies AG IPP12CN10LGHKSA1

    Power Field-Effect Transistor, 69A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics IPP12CN10LGHKSA1 380 1
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    Vyrian IPP12CN10LGHKSA1 1,382
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    Infineon Technologies AG IPS12CN10LG

    Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    Rochester Electronics IPS12CN10LG 43 1
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    12CN10L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG PDF

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a PDF

    PG-TO251-3-1

    Abstract: 12CN10L
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12 mW ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3-11 PG-TO251-3-1 12CN10L PDF

    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 12 mW ID 69 A • 175 °C operating temperature


    Original
    IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L PDF