12A TRANSISTOR SMD Search Results

Contextual Info: IPG20N04S4-12A OptiMOS -T2 Power-Transistor Product Summary 40 VDS RDS on ,max4) V 12.2 mΩ 20 ID A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

2SK3918

Abstract: *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1

12A transistor smd

Abstract: SOT89 transistor marking 5A marking 3a SOT89 SMD TRANSISTOR 12a FCX617
Contextual Info: Transistors SMD Type Switching Transistor FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.

SMD TRANSISTOR 12a

Abstract: smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D
Contextual Info: STTA1206G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr typ 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

diode 6t6

Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
Contextual Info: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

SMD transistor k21

Contextual Info: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions

SMD transistor k22

Abstract: SMD transistor k21 SMD TRANSISTOR 12a fast recovery diode 600v 12A k22 smd 12A transistor smd SMD K22 HFA40HF60 diode smd 600V soft recovery
Contextual Info: International füg Rectifier HEXFRED P D -2 .3 8 1 Provisional Data Sheet HFA40HF60 u l t r a fa s t, s o f t RECOVERY DIODE Characteristics Vbr Units 600 V 'F AV 12 A trr 75 ns Qrr 375 nC 10 A 2.0 V 600V, 12A Features: — Ultrafast Recovery — Ultra Soft Recovery

Contextual Info: Transistors IC Transistor SMD Type Product specification FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A

JTs smd diode

Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Contextual Info: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­

MIC26950

Abstract: EPCOS 475 35v CERAMIC 2r2 DALE SMD resistors 2r2 06035C104KAT2A C1608X7R1H104K GRM188R71H104KA93D GRM32ER71H475KA88L
Contextual Info: MIC26950 Evaluation Board 26V/12A Hyper Speed Control Synchronous DC/DC Buck Regulator SuperSwitcher IITM General Description The MIC26950 DC/DC regulator operates over an input supply range of 4.5V to 26V and provides a regulated output at up to 12A of output current. The output voltage is

SMD TRANSISTOR 12a

Abstract: 2SK3456
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3456 TO-263 Unit: mm +0.1 1.27-0.1 Features Low gate charge +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 6.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.60 Avalanche capability ratings Surface mount package available

npn smd 3a

Abstract: FMMT617TA ic3a
Contextual Info: Transistors SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A

ISL-706

Abstract: 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH
Contextual Info: P WERING SPACE Payload and Bus Satellite Systems, Launch Vehicles P WERING SPACE Intersil's history and experience in the All Intersil SMD products are MIL-PRF-38535/ space and defense industries spans almost QML compliant and are 100% burned in. six decades beginning with the founding

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R195C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R195C7 1Description ThinPAK8x8

BUL56BSMD

Contextual Info: BUL56BSMD NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES 1 3 • ULTRA FAST TURN–ON AND TURN–OFF SWITCHING tr / tf = 40ns 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x .

IRHN7450SE

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1313A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7450SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1313A IRHN7450SE REPETITIVE A V A LA N C H E AN D dv/dt RA TED HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.510 , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

IRHN7450SE

Contextual Info: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

IRHN7450SE

Contextual Info: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

Stepper driver board with L297 L6203 circuit

Abstract: Stepper driver board with L297 L6203 PSO-36 high power LED DRIVER MC34063 uc3842 motor driver circuit MC34063 driver led Triac 3a 600v smd MC34063 smd LED DRIVER BY MC34063 lm317 30a pwm circuit
Contextual Info: AUTOMATION AND ROBOTICS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Type L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 L4940Vxx L4941 LFxx/KFxx LExxA/C LK115Dxx LD1117xx L4931 TL431 MC1403 POWER SUPPLY Cont’d Description

65C7045

Abstract: TO-247 65c7045
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK

65C7045

Abstract: DT80A
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK

transistor c373

Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Contextual Info: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses