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    12A MARKING Search Results

    12A MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    		Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    		Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    		Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    		Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    12A MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SiA427DJ

    Abstract: SiA427DJ-T1-GE3 SIA427DJ-T1
    Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original     		sia427djsc-70sc-70-6l-single2011/65/eu+42002/95/ec12-mar-12sia427dj-t1-ge3sia427dj-t1 PDF

    Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original     		sia427djsc-70-6l-singlesc-702002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: New Product SiA427ADJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () (Max.) ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original     		sia427adjsc-70-6l-singlesc-702002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original     		sia427djsc-70-6l-singlesc-702011/65/eu+22002/95/ec12-mar-12 PDF

    STF11NM65

    Abstract: p11nm6
    Contextual Info: STB11NM65N-1 - STF11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A STF11NM65N 710V < 0.38Ω 12A(1) STP11NM65N


    Original     		stb11nm65n-1stf11nm65nstp11nm65nstw11nm65n+4o-220/fp-o-247stf11nm65p11nm6 PDF

    STB13NM50N-1

    Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
    Contextual Info: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N


    Original     		stb13nm50n/-1stf13nm50nstp13nm50nstw13nm50n+5o-220/fpo-247-i2/d2pakstb13nm50nstb13nm50n-1f13nm50n PDF

    p12nm50fp

    Abstract: p12nm50 STP12NM50FP b12nm50 STB12NM50 STB12NM50-1 STB12NM50T4 STP12NM50 N-Channel mosfet 400v to220
    Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω


    Original     		stp12nm50stp12nm50fpstb12nm50stb12nm50-1+7o-220/fp/d2/i2pako-220fpp12nm50fpp12nm50b12nm50stb12nm50t4n-channel mosfet 400v to220 PDF

    P12NM50

    Abstract: p12nm50fp B12NM50
    Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω


    Original     		stp12nm50stp12nm50fpstb12nm50stb12nm50-1+5o-220/fp/d2/i2pako-220fpp12nm50p12nm50fpb12nm50 PDF

    SI5481DU

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SI5481DU

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481dusi5481du-t1-ge311-mar-11 PDF

    D12NF

    Abstract: D12NF06L 20K60 STD12NF06L-1 JESD97 STD12NF06L STD12NF06LT4
    Contextual Info: STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 3 3 2 1 • Exceptional dv/dt capability ■ Low gate charge DPAK


    Original     		std12nf06lstd12nf06l-1d12nfd12nf06l+320k60jesd97std12nf06lt4 PDF

    SI5481DU

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481dusi5481du-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    Si5481DU

    Abstract: Si5481DU-T1-GE3 marking code bc
    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481du18-jul-08si5481du-t1-ge3marking code bc PDF

    D12NF

    Abstract: D12NF06L STD12NF06L
    Contextual Info: STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 3 3 2 1 • Exceptional dv/dt capability ■ Low gate charge DPAK


    Original     		std12nf06lstd12nf06l-1std12nf06lt4d12nf06erein+2d12nfd12nf06l PDF

    Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET


    Original     		si5481du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    74637

    Abstract: SiA417
    Contextual Info: New Product SiA417DJ Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.040 at VGS = - 1.8 V - 12 a 0.058 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original     		sia417djsc-70sc-70-6l-singlesia417dj-t1-ge3+318-jul-0874637sia417 PDF

    SI5481DU-T1-E3

    Abstract: Si5481DU marking code bc si5481 7377-7
    Contextual Info: Si5481DU Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • TrenchFET Power MOSFET • New thermally Enhanced PowerPAK®


    Original     		si5481du08-apr-05si5481du-t1-e3marking code bc+2si54817377-7 PDF

    Contextual Info: New Product SiA431DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.025 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a 0.070 at VGS = - 1.5 V -4 • TrenchFET Power MOSFET


    Original     		sia431djsc-70sc-70-6l-single2011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: New Product SiA431DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.025 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a 0.070 at VGS = - 1.5 V -4 • TrenchFET Power MOSFET


    Original     		sia431djsc-70sc-70-6l-single2002/95/ec+32011/65/eujs709a02-oct-12 PDF

    D12NF

    Abstract: d12nf06
    Contextual Info: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK


    Original     		std12nf06-1std12nf06std12nf06t4d12nf06+2d12ereind12nf PDF

    D12NF

    Abstract: D12N JESD97 STD12NF06 STD12NF06-1 STD12NF06T4 d12nf06
    Contextual Info: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK


    Original     		std12nf06-1std12nf06d12nfd12n+3jesd97std12nf06t4d12nf06 PDF

    SIA413ADJ

    Contextual Info: New Product SiA413ADJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.)


    Original     		sia413adjsc-70-6l-singlesc-702002/95/ec+32011/65/eujs709a02-oct-12 PDF