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    SIA413ADJ Search Results

    SIA413ADJ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA413ADJ-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V 12A SC70-6 Original PDF 224.85KB
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    Vishay Siliconix SIA413ADJ-T1-GE3

    MOSFET P-CH 12V 12A PPAK SC70-6
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    Vishay Intertechnologies SIA413ADJ-T1-GE3

    Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA413ADJ-T1-GE3)
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    SIA413ADJ Datasheets Context Search

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    SIA413ADJ

    Contextual Info: SPICE Device Model SiA413ADJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiA413ADJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIA413ADJ

    Contextual Info: SiA413ADJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiA413ADJ AN609, 3503u 1451u 8918m 6986u 9658m 5172m 16-Nov-11 PDF

    SIA413ADJ

    Contextual Info: New Product SiA413ADJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.)


    Original     		SiA413ADJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF