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Contextual Info: Profile 8168 128x57 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 6,2 128 57 1,60 100 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com
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Contextual Info: EA 8128-5,8NEL 4.01 GRAFIK LCD 128x56 M. KONTROLLER HD 61202 STN GRÜN Abmessungen Bezeichnung Grenzwerte Wert Einheit Symbol Wert Einheit Außenabmessungen in mm 85 x 38 x 15 mm Versorgunsspannung in V VDD-VSS 0 bis +7 V Sichtfenster in mm 61,7 x 26,1 mm
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Contextual Info: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit
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hy6264aspeed-70/85/100/120ns1db01-11-may94hy6264ap+1hy6264alp
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Contextual Info: CAT24FC65, CAT24FC66 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection FEATURES • Fast mode I2C bus compatible* ■ 5 ms max write cycle time ■ Max clock frequency: ■ Write protect feature - 400KHz for VCC=2.5V to 5.5V ■ Schmitt trigger filtered inputs for
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S6144
Abstract: MRON S6-144
Contextual Info: INTEGRATE] DEVICE 14E D • MÔSS771 00037äb A CMOS PARALLEL 64 X 5-BIT FIFO WITH FLAGS DESCRIPTION: FEATURES: • First-ln/Flrst-Out dual-port m em ory-45M H z • 64 x 5 organization • Low power consumption • — Active: 200mW typical) RAM-based Internal structure allows for fast fall-through time
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ss771ory-45m200mwidt72413+725mhz35mhz128x5mil-std-883s6-144s6144mron
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1SBL
Abstract: AKM6287LP55
Contextual Info: A K M 6287 Series 65536-word x 1-bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast Access Time 45/55/70ns max. • • Single 5V Supply and High Density 22 Pin Package Low Power Standby and Low Power Operation • Standby: 100/LtW (typ.)/10/LtW (typ.) (L-version)
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65536-word45/55/70ns100/ltw/10/ltw+8300mwdp-22nakm6287p-45akm6287p-55akm6287p-70akm6287lp-451sblakm6287lp55
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U7777
Abstract: D41416
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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D41416
Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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d41416upd41416384-wordnpd41416+8jpd414163-001783a3-001784a83-001785bpd41416pd41416-15hpd41416-12pd41416-12
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Contextual Info: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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LH5268AD-10LL
Abstract: LH5268A
Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:
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31DF DIODE
Abstract: IBM motherboard schematics 478 comparison between buffer 74LS245 and 74ls244 ibm 478 motherboard LM339 APPLICATIONS 15-13 pin vga cable connection Hsync Vsync VGA 31df 6 7h on4801 S3 TRIO 64
Contextual Info: •■ ^ ■■ •• n i r a 82C480 8514/A-COMPATIBLE GRAPHICS CONTROLLER ■ ■ ■ Fully Compatible with IBM 8514/A at both register and software 'Adapter Interface' or AI level Runs Windows and Presentation Manager for the 8514/A without special drivers
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82c4808514/a-compatible8514/a160-pin+1316-bit74ls245lm33931df diodeibm motherboard schematics 478comparison between buffer 74ls245 and 74ls244ibm 478 motherboardlm339 applications15-13 pin vga cable connectionhsync vsync vga31df 6 7hon4801s3 trio 64
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24FC64
Abstract: CAT24FC64
Contextual Info: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=1.8V to 5.5V - 1MHz for VCC=2.5V to 5.5V
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3502M
Abstract: 3tb52 M188A m184a
Contextual Info: FJUL63182A-02 MSM63182A/184A/188A ユーザーズマニュアル 第 2 版 2001 年 12 月 10 日 4 FJUL63182A-02 ご 注 意 1. 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま
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SAF-TC11IB-64D96E
Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
Contextual Info: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.
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6287HLJP-25
Abstract: 6287HP
Contextual Info: HM6287H Series 65536-Word x 1-Blt High Speed CMOS Static RAM The Hitachi HM6287H is a high speed 64K static RAM organized as 64-kword x 1-bit. It realizes high speed access time 25/35 ns and HM 6287HP Series low power consumption, employing CMOS process technology and
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48C1024
Contextual Info: M 4 8 C 5 1 2 / 4 8 C 1 0 2 4 5 1 2 K / 1 0 2 4 K F L A S H " E E P R O M ADVANCE DATA SH EET duty 1987 Features • 64K/128K Byte Writable non-volatile memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time
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HY6264A
Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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MLP8 2x3mm
Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Contextual Info: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
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31DF DIODE
Abstract: 82C480 BSS0001 comparison between buffer 74LS245 and 74ls244 BT475 S3 TRIO 64 ramdac 8514 31df S4d2 d04 diode Marking s4
Contextual Info: 82C480/ 82B484 Graphics Accelerator/ Video Support Chip Data Sheet August 1991 Copyright Notice Copyright 1990, 1991, Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce,
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31DF DIODE
Abstract: S3 TRIO 3D ON4801 7.2 mghz BT475 bt475 ramdac S3 TRIO 3d on board marking 3L2 diode S4d2 S3 TRIO jumper
Contextual Info: •■ ■■■■■■ ■■ v ■■ ■■ . n ••■ ■ ■ ■■ ■■■ A ■■ ■■ ■■ _ ' i r 3 82C480 Graphics Accelerator ■ Accelerates Windows, AutoCAD, and Presen tation Manager without special drivers ■ Hardware Graphics Functions:
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82c480160-pin16-bit8514/a+1374ls245bt475256kx4201011b31df diodes3 trio 3don48017.2 mghzbt475 ramdacs3 trio 3d on boardmarking 3l2 diodes4d2s3 trio jumper
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SRM2261
Abstract: SRM2261C55 SRM2261C70 AL221 2551 vn 001542
Contextual Info: OB PF211-52 kT W ^ S Si A M. A i SYSTEMS HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 ' SRM2261C7o SRM2261 r ; 'S - ; 7v I DESCRIPTION T h e S R M 2 2 6 IC 55/70 is a 6 5 ,5 3 6 words * 1 bit asynchronous, static, random a c cess memory or a monolithic C M O S chip. Its very low standby power requirem ent m akes it ideal for applications requiring non-volatile
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amcc q1300t
Abstract: Q3500T Q1300T Q5000T schematic of TTL XOR Gates ebe switches q5000 ECL100K ECL10K K 4080
Contextual Info: Single Cop; PRELIMINARY DEVICE SPECIFICATION W it h '- e a J9 Q M C R O C IR C U I T S C O R P O R A T I O N Q5000 SERIES ECL/TTL LOGIC ARRAYS O DESCRIPTION The A M C C Q 5000 Series of log ic arrays is co m p rise d of five p ro d u cts ranging in density from 1300 to 5000
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q5000800mhz/d1003-0587amcc q1300t+8q3500tq1300tq5000tschematic of ttl xor gatesebe switchesecl100kecl10kk 4080
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24fc64ji-te13
Abstract: 24FC64 AEC-Q100 CAT24FC64
Contextual Info: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=2.5V to 5.5V ■ Write protect feature
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OSC XTAL 32.768KHZ
Abstract: MC68HC05L9 service manual motorola v3i capacitor 5L7 LM 3171 MPS 0704 AD0-AD15 MC68HC68L9 a 2761 SCR 600-75
Contextual Info: MC68HC05L9D/H TM DragonKat 8-Bit Microcontroller MC68HC05L7 MC68HC05L9 MC68HC68L9 MC141510 TECHNICAL DATA IM MC68HG0SL7 and MC68HC0SL9 tremembers of the DcagonKat MCU family designed in Motorola Semiconductor HK Ltd. M O TO R O LA HONG KONG MC68HC05L9 MC68HC05L7
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mc68hc05l9d/hmc68hc05l7mc68hc05l9mc68hc68l9+10mc141510mc68hc0sl7osc xtal 32.768khzservice manual motorola v3icapacitor 5l7lm 3171mps 0704ad0-ad15a 2761scr 600-75
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