128UM Search Results
128UM Price and Stock
Microchip Technology Inc SM802128UMGIC FREQ SYNTH 312.5MHZ 44QFN |
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SM802128UMG | Tray |
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Microchip Technology Inc SM802128UMG-TRIC FREQ SYNTH 312.5MHZ 44QFN |
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SM802128UMG-TR | Cut Tape | 1 |
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Amphenol Corporation 953-101-5010-PFiber Optic Connectors ST FOP Conn,128um, M/M, Ceramic Ferrule, 900um/3mm Boot, Step-Crimp, Dust Cap |
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953-101-5010-P | Kit | 1,000 | 1 |
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Amphenol Corporation MSTC1001Fiber Optic Connectors ST THREADED BOOT 128um MM |
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MSTC1001 | Each | 330 | 1 |
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Amphenol Corporation 953-101-5310Fiber Optic Connectors CONN, ST 128UM MM CERAMIC |
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953-101-5310 | Each | 237 | 1 |
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128UM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2576-50
Abstract: ST7571 2576-5 SCL 1058 2114 static ram ic rwr date code understanding Sitronix st7541 ex 3863 IC 1458 function generator lcd stream system lcd 3203
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ST7571 ST7571 2576-50 2576-5 SCL 1058 2114 static ram ic rwr date code understanding Sitronix st7541 ex 3863 IC 1458 function generator lcd stream system lcd 3203 | |
Contextual Info: OPA8516WDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8516WDD --------------------128um | |
c0503
Abstract: 64x32 pin diagram of LCD dot matrix display KS0108 DRIVER KS0108 connector RW1065 COM23 COM25 KS0108 lcd dot matrix display single line
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RW1065 64x32 capacity64 duty64common 128segment RW1065 64common 192segment duty32common c0503 pin diagram of LCD dot matrix display KS0108 DRIVER KS0108 connector COM23 COM25 KS0108 lcd dot matrix display single line | |
OPA8537RC
Abstract: infrared led chip
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OPA8537RC 128um 210um 330um 250um OPA8537RC infrared led chip | |
OPA8560EDDContextual Info: OPA8560EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8560EDD 250mA --------------------128um OPA8560EDD | |
Contextual Info: Infrared LED Chip OPA8537RC GaAs/GaAlAs 1. Material Substrate GaAs N Type Removed Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbo Min 3. Electro-Optical Characteristics Forward Voltag VF Typ |
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OPA8537RC 128um 210um 330um 250um | |
ST7628
Abstract: BATTERY, PSL 100-12 FB G044 din 71550 sitronix st22 8080 rgb interfaces 24bit 98x70 xe 97
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ST7628 ST7628 8-bit/16-bit Figure11 BATTERY, PSL 100-12 FB G044 din 71550 sitronix st22 8080 rgb interfaces 24bit 98x70 xe 97 | |
din 71550
Abstract: ST7669 8080 rgb interfaces 24bit G545 COM56 din 436050 cog lcm 116 377197 2065-50 B01098
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ST7669 132x162 ST7669 8-bit/16-bit/18-bit 1uF/25V 1uF/16V din 71550 8080 rgb interfaces 24bit G545 COM56 din 436050 cog lcm 116 377197 2065-50 B01098 | |
OPA8516WDDContextual Info: OPA8516WDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8516WDD --------------------128um OPA8516WDD | |
Contextual Info: + 85°C Snap-Mount Aluminum Electrolytic Capacitors F o r a l l g e n e r a l p u r p o s e h i g h CV a p p l i c a t i o n s FEATURES Voltage Range: 10WVDC to 450WVDC Solvent Tolerant End Seal, Standard <250WVDC Rugged Design High Ripple Currents Ratings |
OCR Scan |
10WVDC 450WVDC 250WVDC) G0D217M | |
OPA8760EDDContextual Info: OPA8760EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8760EDD 250mA --------------------128um OPA8760EDD | |
Contextual Info: Infrared LED Chip OPA9415EDD GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage |
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OPA9415EDD 250mA 128um --------------------------11mil | |
Contextual Info: OPA8560EDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8560EDD 250mA --------------------128um | |
din 71550
Abstract: MTA011 COM56 COM95 MT63 40635 ST7669V 947-75
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ST7669V 132x162 ST7669V 8-bit/16-bit/18-bit 1uF/25V 1uF/16V din 71550 MTA011 COM56 COM95 MT63 40635 947-75 | |
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Contextual Info: OPA8760EDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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OPA8760EDD 250mA --------------------128um |