128UM Search Results
128UM Price and Stock
Amphenol Corporation 953-101-5310Fiber Optic Connectors CONN, ST 128UM MM CERAMIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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953-101-5310 | Each | 3,500 | 1 |
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Amphenol Corporation 953-101-5010-PFiber Optic Connectors ST FOP Conn,128um, M/M, Ceramic Ferrule, 900um/3mm Boot, Step-Crimp, Dust Cap |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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953-101-5010-P | Kit | 950 | 1 |
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Amphenol Corporation 953-101-5310-PFiber Optic Connectors CONN, ST 128um MM CERAMIC DC,NUT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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953-101-5310-P | Kit | 75 | 1 |
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Molex 1060253300Fiber Optic Connectors LC Duplex Conn., Multimode, 127 m Ceramic Ferrule, 2mm Duplex Cable, Beige Housing, Straight |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1060253300 | Tray | 2,000 |
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Amphenol Corporation 953-107-50128Fiber Optic Connectors CONNECTOR, ST 128UM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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953-107-50128 | Each | 1 |
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128UM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2576-50
Abstract: ST7571 2576-5 SCL 1058 2114 static ram ic rwr date code understanding Sitronix st7541 ex 3863 IC 1458 function generator lcd stream system lcd 3203
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st75712576-502576-5scl 1058+6 | |
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Contextual Info: OPA8516WDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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opa8516wdd--------------------128um | |
c0503
Abstract: 64x32 pin diagram of LCD dot matrix display KS0108 DRIVER KS0108 connector RW1065 COM23 COM25 KS0108 lcd dot matrix display single line
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rw106564x32capacity64duty64common+12 | |
OPA8537RC
Abstract: infrared led chip
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Original |
opa8537rc128um210um330um+2 | |
OPA8560EDDContextual Info: OPA8560EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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opa8560edd250ma--------------------128um | |
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Contextual Info: Infrared LED Chip OPA8537RC GaAs/GaAlAs 1. Material Substrate GaAs N Type Removed Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbo Min 3. Electro-Optical Characteristics Forward Voltag VF Typ |
Original |
opa8537rc128um210um330um+1 | |
ST7628
Abstract: BATTERY, PSL 100-12 FB G044 din 71550 sitronix st22 8080 rgb interfaces 24bit 98x70 xe 97
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st76288-bit/16-bitfigure11battery, psl 100-12+6 | |
din 71550
Abstract: ST7669 8080 rgb interfaces 24bit G545 COM56 din 436050 cog lcm 116 377197 2065-50 B01098
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st7669132x1628-bit/16-bit/18-bit1uf/25v+10 | |
OPA8516WDDContextual Info: OPA8516WDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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opa8516wdd--------------------128um | |
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Contextual Info: + 85°C Snap-Mount Aluminum Electrolytic Capacitors F o r a l l g e n e r a l p u r p o s e h i g h CV a p p l i c a t i o n s FEATURES Voltage Range: 10WVDC to 450WVDC Solvent Tolerant End Seal, Standard <250WVDC Rugged Design High Ripple Currents Ratings |
OCR Scan |
10wvdc450wvdc250wvdcg0d217m | |
OPA8760EDDContextual Info: OPA8760EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
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opa8760edd250ma--------------------128um | |
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Contextual Info: Infrared LED Chip OPA9415EDD GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage |
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opa9415edd250ma128um--------------------------11mil | |
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Contextual Info: OPA8560EDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
opa8560edd250ma--------------------128um | |
din 71550
Abstract: MTA011 COM56 COM95 MT63 40635 ST7669V 947-75
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st7669v132x1628-bit/16-bit/18-bit1uf/25v+8 | |
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Contextual Info: OPA8760EDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
opa8760edd250ma--------------------128um | |