OPA8560EDD Search Results
OPA8560EDD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
OPA8560EDDContextual Info: OPA8560EDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8560EDD 250mA --------------------128um OPA8560EDD | |
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Contextual Info: OPA8560EDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8560EDD 250mA --------------------128um |