128M NAND FLASH MEMORY Search Results

SAMSUNG MCP

Abstract: MCP NAND
Contextual Info: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die

K9K1G08X0B

Abstract: K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093
Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

K9K1G08U0B

Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

K9K1G08U0B

Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

Contextual Info: ADVANCED DATASHEET IS34MC01GA08/16 IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range Organization IS34MC01GA08 IS34MC01GA16

Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes

F59D1G81A

Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
Contextual Info: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte

Contextual Info: ESM T F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

Contextual Info: IS34MC01GA08/16 A D VA N C ED D A TA SH IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes EE T ADVANCED DATASHEET Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range

NAND Flash

Contextual Info: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit

Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte

1G NAND flash

Abstract: F59L1G81A F59L
Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

NAND Flash

Contextual Info: ESMT F59D1G81A / F59D1G161A Flash 1 Gbit 128M x 8/ 64M x 16 1.8V NAND Flash Memory FEATURES        Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit

NAND Flash

Abstract: F59L1G81A
Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

F59L1G81A

Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

SAMSUNG MCP

Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Contextual Info: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0

SAMSUNG MCP

Abstract: MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY KAL00B00BM-FGV X V(X) Document Title Multi-Chip Package MEMORY 256M Bit (16Mx16) Nand Flash / 128M Bit (4Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial draft. - 256Mb NAND C-Die_Ver 2.6

KBB0XA300M

Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary

SAMSUNG 256Mb NAND Flash Qualification Reliability

Abstract: K9T1G08B0M-FCB0
Contextual Info: Preliminary FLASH MEMORY K9T1G08B0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Program/Erase characteristics note1 is added 2.Technical note is changed

K9K2G08U0M-YCB0

Abstract: 128Mx16bit
Contextual Info: K9K2G08Q0M-YCB0,YIB0 K9K2G16Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9K2G08U0M-VCB0,VIB0 Advance FLASH MEMORY K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
Contextual Info: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue

K9F2G08U0M-YCB0

Abstract: K9F2G16U0M-Y
Contextual Info: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001

Contextual Info: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001