127F Search Results

Contextual Info: PART NUMBER: 127FSR330XJW PHOTOFLASH P arts are RoHS co m p lia n t D ate co d e w h e n p a rts becam e RoHS: 28 APPLICATIONS Photoflash, strobes. Security systems ELECTRICAL SPECIFICATIONS Capacitance: 120 uF Tolerance: -10 % . +20 % Dissipation Factor: 0.06 Max at 120 Hz and 20°C

MSCDRI-127F

Abstract: 127f MSCDRI-127F-5R6
Contextual Info: SCOPE： This specification applies to the Pb Free high current type SMD inductors for MSCDRI-127F-SERIES PRODUCT INDENTIFICATION MSCDRI-127F-100 M ① ② ③ ④ ① Product Code ② Dimensions Code ③ Inductance Code ④ Tolerance Code 1 SHAPES AND DIMENSIONS

transistor marking WC 2C

Abstract: E22/6/AS7620/TMS320C6678/AS7620/NZT6728-datasheet
Contextual Info: TMS320C6678 SPRS691E—November 2010—Revised March 2014 Multicore Fixed and Floating-Point Digital Signal Processor Check for Evaluation Modules EVM : TMS320C6678 1 TMS320C6678 Features and Description 1.1 Features • Eight TMS320C66x DSP Core Subsystems (C66x

Contextual Info: 66AK2E05, 66AK2E02 SPRS865B—June 2013—Revised January 2014 Multicore DSP+ARM KeyStone II System-on-Chip SoC 1 66AK2E05/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

W742C816

Abstract: W742E PC-4000 BELLCORE 202 dual c816
Contextual Info: W742E/C816 4-BIT MICROCONTROLLER Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3

TMS320C6678ACYP

Abstract: TMS320C6678CYP TMS320C6678XCYP TMS320C6678CYPA TMS320C6678XCYPA
Contextual Info: TMS320C6678 Multicore Fixed and Floating-Point Digital Signal Processor Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: TMS320C6472 SPRS612G – JUNE 2009 – REVISED JULY 2011 www.ti.com TMS320C6472 Fixed-Point Digital Signal Processor 1 Features • • • • • • • • • • • Congestion Control • IEEE 1149.6 Compliant I/Os – UTOPIA • UTOPIA Level 2 Slave ATM Controller

Contextual Info: AM5K2E04, AM5K2E02 SPRS864B—June 2013—Revised January 2014 Multicore ARM KeyStone II System-on-Chip SoC 1 AM5K2E04/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz – 4MB L2 Cache Memory Shared by all Cortex-A15

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: AM5K2E04, AM5K2E02 SPRS864B—June 2013—Revised January 2014 Multicore ARM KeyStone II System-on-Chip SoC 1 AM5K2E04/02 Features and Description • ARM Cortex -A15 MPCore™ CorePac – Up to Four ARM Cortex-A15 Processor Cores at up to 1.4-GHz – 4MB L2 Cache Memory Shared by all Cortex-A15

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

Contextual Info: CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4,096 x 18 FEATURES: • The IDT72805LB is equivalent to two IDT72205LB 256 x 18 FIFOs • The IDT72815LB is equivalent to two IDT72215LB 512 x 18 FIFOs • The IDT72825LB is equivalent to two IDT72225LB 1,024 x 18

TMS320TCI6608

Abstract: SPRS623A SPRS623B
Contextual Info: TMS320TCI6608 Multicore Fixed and Floating-Point Digital Signal Processor Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout