125J RF Search Results
125J RF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU | |||
GRM-KIT-OVER100-DE-D | Murata Manufacturing Co Ltd | 0805-1210 over100uF Cap Kit | |||
LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
125J RF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
diode bsy28
Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
|
Original |
BSY17 BSY18 EN744 2N3985 BF153 BSX90 2N4421 diode bsy28 BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28 | |
Contextual Info: *ù r a y iìfà “V Œ u f 11 a n q l£ P r o j e c t i on .THIS PHAW1NCT IS UWUBLI3HEü. | RELEASED FOR PUBLICATION g Cfr’ YUIOHT 19 BY AMP INCCRPOMTID. ALL IWTBKATÎONAL R lW rf M N RVH . 10.67±0.38 Z.420±.0153 2. 39±0 .25£.094±. 070J 28. S8± 0.8* |
OCR Scan |
000030J 208B57 16/SO 208657part S/in/90 5/30/sJ S/30/90 | |
transistor t09
Abstract: A1383 transistor 2sc114 usaf516es047m usaf516es048m 2SA474 2SA27 usaf517es060m 2sc107 transistor 2SC114 replacement
|
OCR Scan |
PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor t09 A1383 transistor 2sc114 usaf516es047m usaf516es048m 2SA474 2SA27 usaf517es060m 2sc107 transistor 2SC114 replacement | |
st25a
Abstract: 2N905 2N904 ST25A transistor ST25C transistor TRANSISTOR st25a ST25C package 2N906 TRANSISTOR 2n906 FZJ 131
|
OCR Scan |
PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 st25a 2N905 2N904 ST25A transistor ST25C transistor TRANSISTOR st25a ST25C package 2N906 TRANSISTOR 2n906 FZJ 131 | |
BC560AP
Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
|
Original |
BCY79A A5T3504 2N4452 BCl77-6 BCY79B BC560AP 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614 | |
SK3019
Abstract: 2sc4044s 2SC652 2SC947 BF262 2SC651 JE9016 2N270S nfe-12g 50m
|
Original |
JE9016E JE9016F JE9016G JE9016 JE9016H JE90161 SK3019 2sc4044s 2SC652 2SC947 BF262 2SC651 2N270S nfe-12g 50m | |
2SD128 transistor
Abstract: 2N2222B MDS38 2n1585 2N2426 2SC18H 2SC34 2SD31 SFT184 GT1608
|
OCR Scan |
T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2SD128 transistor 2N2222B MDS38 2n1585 2N2426 2SC18H 2SC34 2SD31 SFT184 GT1608 | |
Surface Mount
Abstract: P3519
|
Original |
P3519 96sales P3519R P3519 3260B Surface Mount | |
pnp germanium to36
Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
|
Original |
2N2728 MP2357 2N2357 2N1522 2N1523 MP2358 pnp germanium to36 MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 TO36 package germanium | |
SD653C
Abstract: SD65
|
OCR Scan |
SD853C. 15G0V SD653C SD65 | |
Contextual Info: TTL MEMORY 93407 • 93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO R M ERLY 5033 »9033 V1 I f\l* D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bil-oriented, non destructive readout m emory cells, com patible w ith F a irch ild T T L . These m emory cells, organized as 16 words by |
OCR Scan |
16-BIT 16-bit, | |
Fairchild TTLContextual Info: TTL MEMORY 93407 •93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO RM ER LY 5033 »9033 1 l ! . a / D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bit-o r.en ted , non-destructive readout m em ory cells, com patible w ith F a irch ild T T L . These m em ory cells, organized as 16 w ords by |
OCR Scan |
16-BIT 16-bit, 16-bit 02T3014 Fairchild TTL | |
SAA 1251
Abstract: SVA-P111 fiber grinding and polishing tool 124u SW-011 LED 1550nm ScansUX69 Seiko fc sap
|
OCR Scan |
W170X H270mm 50/60Hz OFL-12 OFL-12 50/60HZ SAA 1251 SVA-P111 fiber grinding and polishing tool 124u SW-011 LED 1550nm ScansUX69 Seiko fc sap | |
ibaa
Abstract: 70121l
|
OCR Scan |
IDT70121S/L IDT70125S/L 25/35/45/55ns T70121/70125S T70121/701251A 52-pin IDT70121/IDT70125 IDT70121 ibaa 70121l | |
|
|||
49C466Contextual Info: 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C466 IDT49C466A PRELIMINARY FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 10ns — Error Correct Time: 15ns |
OCR Scan |
64-BIT IDT49C466 IDT49C466A 16-deep 208-pin IDT49C466/A 64-bit5V 49C466 49C466 | |
transistor A495
Abstract: BF189 BF187 2SC622 transistor BC131 FET K5010 2SC804 A495 2SC621A TMT697
|
OCR Scan |
2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 transistor A495 BF189 BF187 2SC622 transistor BC131 FET K5010 2SC804 A495 2SC621A TMT697 | |
Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V |
Original |
IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 cycles/64 cycles/32 1600MT/s IS43TR81280AL | |
Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM AUGUST 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V |
Original |
IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 cycles/64 cycles/32 1600MT/s IS43TR81280AL | |
Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C |
Original |
IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 cycles/64 cycles/32 3TR81280BL -125JBL | |
Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JULY 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V High speed data transfer rates with system |
Original |
IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1600MT/s IS43TR81280BL -125JBL 78-ball | |
Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JUNE 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V High speed data transfer rates with system |
Original |
IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1600MT/s IS43TR81280BL -125JBL 78-ball | |
EEL-19
Abstract: TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179
|
OCR Scan |
MIL-M-38510/401A MIL-M-38510/40HUSAF) 7M-OM/M71 EEL-19 TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179 | |
IS43TR16640
Abstract: DDR31866K IS43TR81280A IS46TR ac-175a 96-ball IS43TR16640A
|
Original |
IS43TR16640A, IS43TR81280A 128MX8, 64MX16 cycles/64 cycles/32 1066MT/s 1333MT/s 1600MT/s IS43TR16640 DDR31866K IS43TR81280A IS46TR ac-175a 96-ball IS43TR16640A | |
IS43TR16640AContextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V • |
Original |
IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A IS43/46TR81280AL 128MX8, 64MX16 cycles/64 cycles/32 switch-15GBLA1 IS46TR81280A IS43TR16640A |