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    125J RF Search Results

    125J RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    CLF1G0035-100P
    Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    GCG31MR71E125JA01K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Ceramic, 25V, 5% +Tol, 5% -Tol, X7R, 15% TC, 1.2uF, Surface Mount, 3216M/1206 PDF
    GRM55RR11H125JA01L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 50V, 5% +Tol, 5% -Tol, R, 15% TC, 1.2uF, Surface Mount, 5750M/2220 PDF
    GRM55RB11H125JA01K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 50V, 5% +Tol, 5% -Tol, B, 10% TC, 1.2uF, Surface Mount, 5750M/2220 PDF

    125J RF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode bsy28

    Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
    Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28


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    bsy17bsy18en7442n3985+13bf153bsx902n4421diode bsy28bf152cs9018bf1582sc7382n3984bsy28 diodesc2644pn3563bsy28 PDF

    Contextual Info: *ù r a y iìfà “V Œ u f 11 a n q l£ P r o j e c t i on .THIS PHAW1NCT IS UWUBLI3HEü. | RELEASED FOR PUBLICATION g Cfr’ YUIOHT 19 BY AMP INCCRPOMTID. ALL IWTBKATÎONAL R lW rf M N RVH . 10.67±0.38 Z.420±.0153 2. 39±0 .25£.094±. 070J 28. S8± 0.8*


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    000030j208b5716/so208657part+3s/in/905/30/sjs/30/90 PDF

    transistor t09

    Abstract: A1383 transistor 2sc114 usaf516es047m usaf516es048m 2SA474 2SA27 usaf517es060m 2sc107 transistor 2SC114 replacement
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    pt6905apt6905bpt6905c100msa+14100m5amm2261mm2262mm2263transistor t09a1383 transistor2sc114usaf516es047musaf516es048m2sa4742sa27usaf517es060m2sc107transistor 2sc114 replacement PDF

    st25a

    Abstract: 2N905 2N904 ST25A transistor ST25C transistor TRANSISTOR st25a ST25C package 2N906 TRANSISTOR 2n906 FZJ 131
    Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    pt6905apt6905bpt6905c100msa+14100m5amm2261mm2262mm2263st25a2n9052n904st25a transistorst25c transistortransistor st25ast25c package2n906transistor 2n906fzj 131 PDF

    BC560AP

    Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
    Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C


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    bcy79aa5t35042n4452bcl77-6+11bcy79bbc560ap2sa720 semikt313alow-power silicon pnpbc212apkt313bbc454c2sa1115tbc560bmm1614 PDF

    SK3019

    Abstract: 2sc4044s 2SC652 2SC947 BF262 2SC651 JE9016 2N270S nfe-12g 50m
    Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 SO S5 90 JE9016E JE9016F JE9016F JE9016G JE9016G JE9016 JE9016H JE9016H JE90161 JE90161 BF262 BF200 2SC947 2SC1047 2SC2404 BF200B 2SC707 2SC2377 BF1S0 2SC761


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    je9016eje9016fje9016gje9016+10je9016hje90161sk30192sc4044s2sc6522sc947bf2622sc6512n270snfe-12g 50m PDF

    2SD128 transistor

    Abstract: 2N2222B MDS38 2n1585 2N2426 2SC18H 2SC34 2SD31 SFT184 GT1608
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    t0106te39042n914a2n2272+14300m5a2sc10010b705300ma2sd128 transistor2n2222bmds382n15852n24262sc18h2sc342sd31sft184gt1608 PDF

    Surface Mount

    Abstract: P3519
    Contextual Info: Weight/Mass 0.490 Grams Maximum Packaging Tape & reel 24mm : 13" reel, 1500 pieces max. SERIES P3519 FERRITE CORE 0.01 5.35 0.10 ±10% 0.01 5.11 0.12 ±10% 0.01 4.83 0.15 ±10% 0.01 4.62 0.18 ±10% 0.02 4.39 0.22 ±10% 0.02 3.17 0.27 ±10% 0.02 3.97 0.33


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    p351996salesp3519r3260b+1surface mount PDF

    pnp germanium to36

    Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
    Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652


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    2n2728mp23572n23572n1522+112n1523mp2358pnp germanium to36mp2400b2n575a2n56942n21562n5752n1518to36 packagegermanium PDF

    SD653C

    Abstract: SD65
    Contextual Info: Bulletin 12093 rev. B 11/97 International IÖ R Rectifier SD853C.S50K SERIES FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c tifie r d io d e s e rie s ■ 5 .0 |is re c o v e ry lim e ■ H igh v o lta g e ra tin g s up to 4 5 0 0 V


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    sd853c15g0vsd653csd65 PDF

    Contextual Info: TTL MEMORY 93407 • 93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO R M ERLY 5033 »9033 V1 I f\l* D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bil-oriented, non destructive readout m emory cells, com patible w ith F a irch ild T T L . These m emory cells, organized as 16 words by


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    16-bit PDF

    Fairchild TTL

    Contextual Info: TTL MEMORY 93407 •93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO RM ER LY 5033 »9033 1 l ! . a / D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bit-o r.en ted , non-destructive readout m em ory cells, com patible w ith F a irch ild T T L . These m em ory cells, organized as 16 w ords by


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    16-bit02t3014fairchild ttl PDF

    SAA 1251

    Abstract: SVA-P111 fiber grinding and polishing tool 124u SW-011 LED 1550nm ScansUX69 Seiko fc sap
    Contextual Info: S II •* ELECTRONIC COMPONENTS Seiko Instruments FIBER OPTICS Seiko Instruments Inc. Plug Ferrule for Fiber Optic Connector •FEATURES • H ig h -q u a lity p lu g fe rru le , w ith h ig h re lia b ility c e ra m ic u se d a t th e o p tic a l p a rt • P e rfe c t p lu g fe rru le for s in g le -rn o d e use


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    w170xh270mm50/60hzofl-12+8saa 1251sva-p111fiber grinding and polishing tool124usw-011led 1550nmscansux69seiko fc sap PDF

    ibaa

    Abstract: 70121l
    Contextual Info: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT J ir ? F eatures * High-speed access - * * Com m ercial: 25/35/45/55ns max. Low-power operation - ID T70121/70125S A ctive: 675m W (typ.) * * * * IDT70121S/L IDT70125S/L INT flag fo r port-to-port communication


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    idt70121s/lidt70125s/l25/35/45/55nst70121/70125s+6t70121/701251a52-pinidt70121/idt70125idt70121ibaa70121l PDF

    49C466

    Contextual Info: 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C466 IDT49C466A PRELIMINARY FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 10ns — Error Correct Time: 15ns


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    64-bitidt49c466idt49c466a16-deep+4208-pinidt49c466/a64-bit5v49c466 PDF

    transistor A495

    Abstract: BF189 BF187 2SC622 transistor BC131 FET K5010 2SC804 A495 2SC621A TMT697
    Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    2sa372u70032sa446450mi+16450msa10om02n960/462n962/46460mi460m5transistor a495bf189bf1872sc622transistor bc131fet k50102sc804a4952sc621atmt697 PDF

    Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


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    is43/46tr16640ais43/46tr16640alis43/46tr81280ais43/46tr81280al+6128mx864mx16cycles/64cycles/321600mt/sis43tr81280al PDF

    Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM AUGUST 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


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    is43/46tr16640ais43/46tr16640alis43/46tr81280ais43/46tr81280al+6128mx864mx16cycles/64cycles/321600mt/sis43tr81280al PDF

    Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C


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    is43/46tr16640bis43/46tr16640blis43/46tr81280bis43/46tr81280bl+6128mx864mx16cycles/64cycles/323tr81280bl-125jbl PDF

    Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JULY 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V  High speed data transfer rates with system


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    is43/46tr16640bis43/46tr16640blis43/46tr81280bis43/46tr81280bl+6128mx864mx161600mt/sis43tr81280bl-125jbl78-ball PDF

    Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM JUNE 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Backward compatible to 1.5V  High speed data transfer rates with system


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    is43/46tr16640bis43/46tr16640blis43/46tr81280bis43/46tr81280bl+6128mx864mx161600mt/sis43tr81280bl-125jbl78-ball PDF

    EEL-19

    Abstract: TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179
    Contextual Info: IQUAL'IK ICA I ION I RE QUIREMENTS I REMOVED M I L- M- 38 51 0/ 40 1A 9 Auaust 1983 Tiimrmmnr MIL-M-38510/40HUSAF 22 October 1981 | | I MILITARY SPECIFICATION MICROCIR CU IT S, DIGITAL, N-CHANNEL, S IL ICON-GATE , MO NO LI TH IC PERIPHERAL INTERFACE ADAPTER


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    mil-m-38510/401amil-m-38510/40husaf7m-om/m71eel-19+6tb 1226 enaes 1136hc eel-19ani 1015kss 1206trw 1179 PDF

    IS43TR16640

    Abstract: DDR31866K IS43TR81280A IS46TR ac-175a 96-ball IS43TR16640A
    Contextual Info: IS43TR16640A, IS43TR81280A 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION APRIL 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V            Refresh Interval:


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    is43tr16640ais43tr81280a128mx864mx16+10cycles/64cycles/321066mt/s1333mt/s1600mt/sis43tr16640ddr31866kis46trac-175a96-ball PDF

    IS43TR16640A

    Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


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    is43/46tr16640ais43/46tr16640alis43/46tr81280ais43/46tr81280al+7128mx864mx16cycles/64cycles/32switch-15gbla1is46tr81280ais43tr16640a PDF