125CC Search Results

Contextual Info: F-198-1 TMM-106 ~ K-~S-D . y j SM T Page 92 S P E C IF IC A T IO N S Materials: |*im Insulator Material: , T U Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Operating Temp Range: -65°C to + 105CC with Tin; -65CC to +125CC with Gold Plating:

Contextual Info: 11-DENSITY S P E C IF IC A T IO N S Materials: In su lator M aterial: Black Litjuid Crystal Polym er C o n ta c i Material: BeCu ; Current; Rating: 2A @ 80°C am bient O p erating Tem p Range: -65°C tei + 125CC P lating: ? • . -Ï-.1 . . 1r . : M ates w ith :

Contextual Info: S M S -1 3 0 -0 2 -T -D % S M S -1 2 0 -0 1 - S -S S M S -1 1 C M J2 -S -S r i . S P E C IF IC A T IO N S Materials: Insulator Material: T O Black Liquid Crystal Polymer Contact Material: Phosphor Bronze Current Rating: 1A Operating Temp Range: -65°C to +125CC with Gold

Contextual Info: Model ILB-1206 VISHAY Vishay Dale Multilayer Ferrite Beads FEATURES • High reliability. • Surface mountable. • Temperature range: - 55"C to + 125CC. MECHANICAL SPECIFICATIONS Solderability: 95% coverage after 5 second dip in + 230°C solder following a 60 second pre-heat @ + 120°C and

723C

Abstract: 723CE RCA-CA723 RCA H 715 MCI 723 mb3752 MCI723 LM723 RC723 HA17723
Contextual Info: ¿ IA 7 2 3 / C M F jj» r g a U - ^ 'r L 9 X -, lt i ;t Æ Œ I i 2 '— 3 7 V < D *5 H T - | â f f i T - # Top, : —55~ + 125cC (723) V/AKPulse) : 5 0 V ( 5 0 m s e c .7 2 3 ) * 7* ; 40V 0 ~ 7 0 r (723C) V ,- , : 4 0 V O t ü t lK ÎÈ .- " O í+ f t

Contextual Info: Tantalum on Silicon Chip Resistors PWA, PWB Power Chips PWA, PWB The PW series of single value chip resistors combine excellent stability with good power handling capacity; PWA 1/2 watt, PWB 1.0 watt, up to 70°C derated to zero at 175°C. Maximum operating temperature is 125CC.

Contextual Info: Honeywell A dvance Information HC81610 64K X 16 RADIATION-HARDENED SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Full military temperature operation -55°C to 125°C • Neutron Hardness through 1x10u crrr2 • Access Time < 60 nsec (-55°C to 125cC)

RC4200

Abstract: RC4200A rc4200 raytheon HC1200 RM4200 NJM4200 RV4200 150M
Contextual Info: - 190- RC4 2 0 0 n S H Ïü R ay th eo r T 0= 2 5 ° c • —22 V : —5 5 ~ + 125cC (R M 4 2 0 0 /R M 4 2 0 0 A ) —5mA - 4 0 ~ + 8 5 t : ( R V 4 2 0 0 /R V 4200A ) 0 ~ + 7 0 t : ( R C 4200/R C 4200A ) •f*D 500mW : —6 5 ~ + 1 5 0 cC (RM4200/RM4200A)

Contextual Info: F-199-1 m samTëc S P E C IF IC A T IO N S Materials: In sulator M aterial: Black L quid Crystal Polym e C ontact M aterial: Phosphor Bronze C urren Rating: 2A @ 8 }°C am bient O p erating Tem p Range: -65°C t + 125CC Plating Sn or A j over 50u" (1,27 jm ) Ni

itv.v59.031

Contextual Info: 160 Series • Metallized Polyester / Radial Leads ■ Radial Leaded 10 mm to 27.5 mm GENERAL SPECIFICATIONS ■ Non Inductively Wound ■ Non-Polar ■ Flame Retardant Case Meets UL94V0 Operating Temperature: -55°C to +125CC with voltage derating above 85°C

Contextual Info: DS1721 P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1721 -Wire Digital Thermometer and Thermostat PIN ASSIGNMENT • Temperature measurements require no external com­ ponents with ±1°C accuracy SDA a d 1 SCL D O 2 • Measures temperatures from -55°C to +125CC.

TL054A1

Abstract: TL051 TL051 equivalent diode u1d 315
Contextual Info: TL05x, TL05XA, TL05xY ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOS178 - FEBRUARY 1997 Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers Faster Slew Rate 20 V/|js Typ Without Increased Power Consumption • •

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

4136N

Abstract: 4136D
Contextual Info: RC4136, RM4136, RV4136 QUAD GENERAL-PURPOSE OPERATIONAL AMPLIFIERS SLOSQ72 - MARCH 1978 - REVISED SEPTEMBER 1990 • • • • • • • Continuous-Short-Circuit Protection Wide Common-Mode and Differential Voltage Ranges No Frequency Compensation Required

TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Contextual Info: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly

A23B

Contextual Info: SIEMENS CMPNTS t OPTO MME D • A23b 35 b ODGSGDb 1 B S IE X IL101B SIEMENS HIGH SPEED THREE STATE OPTOCOUPLER -M I-3 } Package Dimensions in Inches mm no G K» AN O D E { 5 - y 3 Vcc f- 3 G A TE (6 10) C ATHODE E i960) ncQ - y tg] t¿i tjr W3 * 3

VN1310N3

Contextual Info: Gì Super tex inc. VN13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ Order Number / Package ^ D S O N ' d io n i (max) (min) TO-39 TO-92 40V 8Ì2 0.5A VN1304N2 VN1304N3 60V 8 ii 0.5A VN1306N2 VN1306N3

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B V qqs R dS<ON max) 60V 5.0ÌÌ Order Number / Package If BV dss / TO-92 0.75A VN10KN3 Features Advanced DMOS Technology □ Free from secondary breakdown

lcc-200

Abstract: dg441
Contextual Info: DG441/442 Vishay Siliconix Quad SPST CMOS Analog Switches FEATURES Low On-Resistance: 50 £2 Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action— toN: 150 ns Low Charge Injection— Q: -1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic

TJS10

Abstract: fuji IGBT e2ba
Contextual Info: Ratings and characteristics of Fuji IGBT 1 M B H 1 OD . Out!ine Drawing 6 2. Equivalent circuit C:Collector FWD C O N N F C T IO N CATE <2 > C O L L E C T O R O © D 3. Absolute maximum ratings E M IT T E R ( 10=25*0 ) Symbols Rat ings Collector-Emitter Voltage

SN54LVT162244wd

Abstract: LVT162244 Scans-005334
Contextual Info: SN54LVT162244, SN74LVT162244 3.3-V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS S C BS268A-JU NE 1993 - REVISED FEBRUARY 1994 Output Ports Have Equivalent 22-Q Series Resistors, So No External Resistors Are Required State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

stm 8309

Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
Contextual Info: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C