1249Y Search Results

Contextual Info: DS 1249Y DALLAS „ 1249Y 2048K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 years m inimum data retention in the absence of external power NC I1 1 32 I VCC A16 I1 2 31 A15 A14 I1 3 30 1 At 7 A12 I1 4 29 I WE A7 I1 5 28 I A13

32-PIN

Abstract: DS1249Y DS1249Y-100 DS1249Y-85
Contextual Info: DS 1249Y DALLAS „ 1249Y 2048K Nonvolatile S R A M s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power NC I1 1 • Data is automatically protected during power loss A16 I1 A14 I1 • Directly replaces 256K x 8 volatile static RAM

249Y

Abstract: 32-PIN DS1249AB DS1249AB-70 DS1249Y DS1249Y-70
Contextual Info: D S 1249Y /A B DALLAS 1249Y/AB 2048K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss NC h 1 A16 I 2 A14 • Unlim ited w rite cycles

Contextual Info: D S 1249Y/A B DALLAS SEMICONDUCTOR 1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power NC A16 • D a ta is autom atically protected during power loss 11 1 32 1 11 31 1 2 3 Vcc A15

Contextual Info: DS 1249Y DALLAS 1249Y 2048K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power NC • Data is automatically protected during power loss • Directly replaces 256K x 8 volatile static RAM

Contextual Info: D S 1249Y DALLAS SEMICONDUCTOR 1249Y 2048K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 256K x 8 volatile static RAM or EEPROM • Unlimited write cycles

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: 1249Y DALLAS SEMICONDUCTOR D S 12 49 Y 2 0 4 8 K Nonvolatile S R A M FEA TU R E S PIN A S S IG N M E N T • D a t a r e t e n t i o n in t h e a b s e n c e o f Wqq NC 1 1 • D a t a is a u t o m a t i c a l l y p r o t e c t e d d u r i n g p o w e r l os s

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

static ram 2048K

Contextual Info: DALLAS s e m ic o n d u c t o r 1249Y 2048K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 256K x 8 volatile static RAM

LA3161

Abstract: A1ZA N1407 la 3161 LA3160
Contextual Info: 注文コード No. N 5 7 3 G 半導体ニューズ No.N573F をさしかえてください。 モノリシックリニア集積回路 カーステレオ用 LA3161 2 チャネルプリアンプ 特長 ・2つのプリアンプを内蔵している。 ・定電圧回路内蔵のためリップル除去率が良い。

IM1249Y-100

Contextual Info: INNOVATIVE 1249Y-100 256K X 8 NO POWER SRAM FEATURES • Data Retention in the absence of power • Automatic data protection during power PIN CONFIGURATION NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Gnd failure • Data Retention over 10 years