1247 DIODE Search Results
1247 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
1247 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MAX1680
Abstract: MAX1680ESA MAX1681 MAX1681ESA Switched-Capacitor Voltage Doublers
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125ma125khz/250khzmax1680500khz/1mhz+6 | |
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Contextual Info: 19-1247. Rev 0, 7/97 125mA, Frequency-Selectable, Switched-Capacitor Voltage Converters Description The devices' equivalent output resistance typically 3.5Q allows them to deliver as much as 125mA with only a 440mV drop. A shutdown feature reduces quies |
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125ma440mvmax1680/maximax860/max861+4 | |
RESISTOR FOOTPRINT 1206
Abstract: vishay so-8 asynchronous Buck controller 1206 footprint 1247 diode 25V capacitors LM2727 RESISTOR FOOTPRINTS 1812 footprint MOSFET SO-8
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lm272716vdc800khzresistor footprint 1206+8 | |
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Contextual Info: 1247 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage47 @I(Z) (A) (Test Condition)80m Tolerance (%)10ì P(D) Max. (W)15 Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150õ Package StyleStR-M4 |
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voltage47pp/10k9 | |
1681s
Abstract: IN-4146 in4146
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125mamax1680/maxmax1680max16b1+6 | |
1367BContextual Info: Ordering num ber: EN1367B LB 1247 N0.1367B Monolithic Digital IC Active-Low Input,8-Unit, High-Current, Low-Saturation Driver The LB1247 is a low active input type 8-unit driver array with high current, low saturation output. Applications . 4-phase stepping motor driver of 2 channels. |
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en1367b1367blb1247400ma | |
2SK1155
Abstract: 2SK1156 DSA003638
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2sk11552sk1156ade-208-1247o-220ab+1 | |
RESISTOR 1206
Abstract: AN-1247 BAT-54 LM2727 P1168 Si4816DY Si4826DY Si4884DY SMA right pcb footprint Connector
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lm272716vdc800khzresistor 1206+7 | |
2SK1155
Abstract: 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A
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2sk11552sk1156rej03g0909-0200ade-208-1247+4 | |
LM2469Contextual Info: LM 1247 LM1247 150 MHz I2C Compatible RGB Preamplifier with Internal 512 Character OSD ROM, 512 Character RAM and 4 DACs T ex a s In s t r u m e n t s Literature Number: SNOSA28C July 11, 2011 LM1247 Semiconductor 150 MHz I2C Compatible RGB Preamplifier with Internal 512 |
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lm1247snosa28clm2469 | |
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Contextual Info: 19-1247; Rev 0; 7/97 1 2 5 m A, Fre que nc y-Se le c t a ble , Sw it c he d-Ca pa c it or Volt a ge Conve rt e rs _Applic a t ions Local Negative Supplies _Fe a t ure s ♦ Selectable Switching Frequencies: |
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125khz/250khzmax1680500khz/1mhzmax1681+3 | |
MAX16811
Abstract: AX1680 MAX1581
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125ma125khz/250khzmax1680500khz/1mhz+5 | |
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Contextual Info: User's Guide SNVA057C – August 2002 – Revised April 2013 AN–1247 LM2727 Evaluation Board 1 Introduction The LM2727 evaluation board has been designed for a wide variety of components in order to show the flexibility of the LM2727 chips. The input voltage limitations are the same as the chip: 2.2 to 16 VDC. The |
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snva057clm2727lm2727/ti | |
MAX1246-4
Abstract: transistor P 0225 transistor 1247
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12-bitqsop-16max1246/max1247max1246+8 | |
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Contextual Info: Ordering number :EN2772B DBB08 Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Package Dimensions Features • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. · Two type of package available, surface mount type |
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en2772bdbb08dbb08-applieddbb08c+1 | |
DBB08
Abstract: DBB08C DBB08G
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en2772bdbb08dbb08-applieddbb08c+1 | |
DBB08G
Abstract: DBB08 DBB08C
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en2772bdbb08dbb08-applieddbb08c+1 | |
DBB08C
Abstract: DBB08 DBB08G 27721
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2772bdbb08dbb08-applieddbb08c+2 | |
diode OA-79
Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
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2-oa79diode oa-79germanium diode oa79oa79+6 | |
OA79
Abstract: 0A79 AA119 0A79 diode AA119 application germanium diode OA79 OA79 diode reverse circuit aa119 diode diode AA119 diode OA-79
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2-oa79aa119-aa119oa79+8 | |
TA 3600
Abstract: T1929N T380N T869N
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t380nt869nt1929nta 3600 | |
ITE 8785
Abstract: 1N1832CA
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jantxv1n2999buz7760uz78601n1370+7 | |
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Contextual Info: SIEMENS BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 314D VCE k 1200V 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code |
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o-218abq67040-a4226-a2fl23sb05fl235fc+1 | |
BUP314DContextual Info: SIEMENS BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP314D VfcE h 1200V 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code |
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bup314do-218abq67040-a4226-a2 | |