1237 TRANSISTOR Search Results

BUY69C

Contextual Info: G E SOLID STATT "Dl 3875081 G E SOLID STATE 5T^3fl7SOfll D017bBfi b 01E 17628 D Electron Power Transistors File N um ber 1237 BUY69A, BUY69B, BUY69C High Voltage Silicon N-P-N

Contextual Info: Small-signal Transistors CONTENTS Page INDEX 3 SELECTION GUIDE 13 CONVERSION LIST 35 MARKING 41 GENERAL 47 DEVICE DATA in alphanumeric sequence 85 PACKAGE OUTLINES 1223 ACCESSORIES FOR TO-126 PACKAGES 1233 MOUNTING INSTRUCTIONS FOR TO-126 PACKAGES 1237 DATA HANDBOOK SYSTEM

thomson microwave transistor

Abstract: thomson rf power transistor
Contextual Info: S G S—THOMSON Q4C D | 752=1237 □ 000141 3 j 7^- _ SOLID STATE MICROWAVE SD1544 THOMSON-CSF COMPONENTS CORPORATION • I Montgomeryville, PA 18936 • (215}362-8500 » T W X 51Q 661-7299 _ , - ■• ~j 2 GHz MICROWAVE POWER TRANSISTOR DESCRIPTION

sef530

Abstract: SEF532 SEF531 60v 9A c243s
Contextual Info: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS

SEFH25N08

Abstract: SEFH25N10 25N1
Contextual Info: S G S-THOMSON 07E D g T3C 17565 SEFH25N08 SEFH25N10 SEFM25N08 SEFM25N10 S fi s t% . 7=15=1237 OOiaObö D | D N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

BUW51.52

Contextual Info: _ ^2=1237 0G2âôb3 S • ~ X H"'3 3 “ i ' i SGS-THOMSON slLiOTOiOÛS S G S-THOMSON B U W 51 3DE D FAST SWITCHING POWER TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN INTERNAL SCHEMATIC DIAGRAM

C 2335

Contextual Info: File Number BUY69A, BUY69B, BUY69C 1237 High Voltage Silicon N-P-N Power Transistors TERM INAL D ESIG N A I lu N S For Horizontal-DefleCtion Circuits and Other High-Voltage Switching Applications Features: • Fast S w itching Speed ■ H igh Voltage Ratings: VCCx - 500-1000V

STP60N05FI

Abstract: 20KN50 STP60N05 W237 SGS Transistor
Contextual Info: 7=12=1237 □04fciS3cî Dfi2 • SGTH SGS-THOMSON STP60N05 STP60N05FI ¡ILJOTMiiKgS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP60N05 STP60N05FI ■ . ■ . ■ . ■ . . 50 V 50 V RDS on < 0.02 < 0.02 Ü n Id 60 A 32 A TYPICAL RDS(on) = 0.017 a

BUY89A

Abstract: M3D2B71 BUY89 Horizontal-Deflection Output Transistors BUY88 BUY69A BUY69B BUY69C tlC3-13M9 RCA-BUY69
Contextual Info: File Number HARRIS BUY69A, BUY69B, BUY69C 1237 SEfllCOND S E C T O R SbE 4302271 D 00407S7 2S7 H H A S 7 ^ 3 3 High Voltage Silicon N-P-N Power Transistors - / 3 TERMINAL DESIGNAI luNS c E -v For Horizontal-DefleCtion Circuits and Other High-Voltage Switching Applications

SD1229-1

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR
Contextual Info: S G S-THOMSON G4C 0 I 7=12=1237 0 0 0 0 0 4 1 T 1~ ' D T ^S3 - / / SOLID STATE MICRUWAVE SD1229-1 THOMSON-CSF COMPONENTS CORPORATION î Montgorrieryville, P A 18936 * Ï215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR .230 .320 DESCRIPTION

BFY90

Abstract: BFX89 BFY90 Data BFR99A case BFX89 J BFY90 bfx89-bfy90
Contextual Info: 30E D • 7^2=1237 Q 0 3 D C^ S T ■ ' ~ T ? 1 rrz SCS-THOMSON ^ 7# > [ - \ S BFX89 BFY90 S G S-THOMSON WIDE BAND VHF/UHF AMPLIFIER i SILICON PLANAR EPITAXIAL TRANSISTORS . TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIO N S : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER

lm6484

Abstract: LMC6134 LM2710 Linear and Switching Voltage Regulator Fundamentals LMC6482 equivalent lcd inverter board schematic AN-1149 AN-1237 AN-556 FPD33584
Contextual Info: National Semiconductor Application Note 1237 April 2003 Overview This is the second half of the flat panel display design guidelines. Part 1 focused on the Timing Controller TCON and Column Driver RSDS interface. Part 2 focuses on the voltage references and power supply generation. In a typical

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

self

Contextual Info: APPLICA TION NOTE NEC SELF REFRESH DRAM NECCorporation 1994,1996 Document No. M 11500EJ2V0AN00 {2nd edition Previous No. IEA-1300) Date Published August 1996 P Printed in Japan 1237 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

BUY69A

Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Contextual Info: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

Contextual Info: 715*1237 GG53Böb 1 • T ^ - O g MC3303 MC3403-MC3503 SCS-THOMSON HLHOTTI^OiDOi S G S-THOMSON 3DE D LOW POWER DIFFERENTIAL INPUT QUAD OP-AMPs ■ SHORT-CIRCUIT PROTECTED OUTPUTS ■ CLASS AB OUTPUT STAGE FOR MINIMAL CROSSOVER DISTORTION ■ SINGLE SUPPLY OPERATION : + 3 V TO + 36 V

SGS15DB070D

Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
Contextual Info: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.

Contextual Info: 7^=1237 00235D1 1 • - TL084 TL084A-TL084B SGS-THOMSON 0*l IiLi m ®li«§ S G S-THOMSON 3GE D J -F E T INPUT QUAD OP-AMPs ■ LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

BC177, BC178, BC179

Abstract: 45X10 177b bc178b bc179
Contextual Info: 3QE » • 712*1237 UUJUorn o — -j / T T SGS TH O M S O N ^ 7 # [ * [ ^ m i O T r e s S 6 BC177 BC 178-B C 179 S -T H O M S O N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors In TO-18 metal case.They

STF4045DV

Abstract: STF4045
Contextual Info: 3QE ]> • 7^2*1237 Ü G S O ^ M T SGS-THOMSON O^IO [n] s iIL[l©ir[n]@[MD(Si STF4045DF STF4045DV S G S-THOMSON T'1V5>5 NPN DARLINGTON POWER MODULE ■ ■ ■ ■ ■ ■ . . EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE

Contextual Info: 3ÜE D 7^*1237 DG2133Ü 1 SGS-THOMSON s 6 r F O s - thqhson L4926/8 T 'il-l 3 > DUAL MULTIFUNCTION VOLTAGE REGULATOR ADVANCE DATA STANDBY O UTPU T VOLTAGE PRECISION 5V ±2% O UTPU T 2 TRACKED TO THE STANDBY OUT­ PUT O U TPUT 2 DISABLE FUNCTION FOR STAND­

Contextual Info: 30E Æ T » • 7 ^ 2*1237 d o 2 T ì5 7 ö S G S -T H O M S O N s 6 s - thomson M [M iPJ©mo)i][] gS_ S G S P 3 1 9 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP319 • • • • V qss 500 V ^DS(on) 3.8 ß Id 2.8 A HIGH SPEED SWITCHING APPLICATIONS

GL+7837

Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation