120N0 Search Results

120N0 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
HSP120N08	Huashuo Semiconductor	N-Ch 80V Fast Switching MOSFET with 120A continuous drain current, 4.7mΩ RDS(ON), and 220W power dissipation, suitable for synchronous buck converters, motor drives, and DC/DC conversion applications.	Original	PDF
SKCS120N03ZB	Shikues Semiconductor	Low voltage applications: automotive, DC/DC converters, power management in portable/battery-operated products. N-Channel FET, DFN 3*3A-8L, VDS=30V, I=34A.	Original	PDF
JMTQ120N03D	Jiangsu JieJie Microelectronics Co Ltd	30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 14.3m ohm at VGS=10V and 21.7m ohm at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package.	Original	PDF
JMTV120N03A	Jiangsu JieJie Microelectronics Co Ltd	30V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and DFN2020-6L package.	Original	PDF
SLD120N04T	Maplesemi	N-channel 40V 120A Power MOSFET with typical RDS(on) of 3.3 mΩ at VGS = 10 V, designed for load switching, PWM applications, and power management, featuring low on-resistance, fast switching, and 100% avalanche tested performance.	Original	PDF
SLP120N06T	Maplesemi	60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, suitable for high-efficiency power management, load switching, and PWM applications.	Original	PDF
SLD120N02T	Maplesemi	N-channel 20V 120A MOSFET with typical RDS(on) of 2.1 mΩ at VGS = 4.5V, low Crss, fast switching, 100% avalanche tested, and TO-252 package.	Original	PDF
SLM120N03T	Maplesemi	N-Channel MOSFET with 30V drain-source voltage, 120A continuous drain current, and on-resistance of 2.6mΩ at VGS = 10V, utilizing advanced TRENCH technology for low conduction loss and high switching performance in TO-252 package.	Original	PDF
JMTK120N03A	Jiangsu JieJie Microelectronics Co Ltd	30V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12.2mΩ at VGS = 10V and 20.5mΩ at VGS = 4.5V, featuring advanced trench technology, low gate charge, and TO-252-3L package.	Original	PDF
JMTQ120N03A	Jiangsu JieJie Microelectronics Co Ltd	30V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.8mΩ at VGS=10V and 19.1mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package.	Original	PDF
SLB120N06T	Maplesemi	60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency power switching applications.	Original	PDF
SK120N03B	Shikues Semiconductor	30V N-Channel, RDS(ON) 3.7mΩ@VGS=10V, Low Gate Charge, Fast Recovery Diode, DC/DC Converters, Motor Switch, TO-252.	Original	PDF
SLD120N03T	Maplesemi	N-channel MOSFET with 30V drain-source voltage, 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, TO-252 package, suitable for PWM, load switch, and power management applications.	Original	PDF
SLM120N06G	Maplesemi	60V N-Channel MOSFET with 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, DFN5x6 package, suitable for DC/DC converters and power management applications requiring low on-resistance and high switching performance.	Original	PDF

SLP120N08G2	Maplesemi	N-Channel MOSFET with 85V drain-source voltage, 120A continuous drain current, 4.5mΩ typical RDS(on) at VGS = 10V, suitable for motor drives, DC/DC conversion, and power management applications.	Original	PDF
SLB120N08G2	Maplesemi	N-Channel 85V 120A Power MOSFET with typical RDS(on) of 4.5 mΩ at VGS = 10 V, designed for motor drives and DC/DC conversion, featuring low Crss, fast switching, and 100% avalanche testing.	Original	PDF
HKTD120N04	Shenzhen Heketai Electronics Co Ltd	N-channel Power MOSFET with 40V drain-source voltage, 120A continuous drain current, and on-resistance of 2.6mΩ max at VGS=10V; housed in TO-252 package.	Original	PDF
SLD120N06T	Maplesemi	60V N-Channel MOSFET with 120A continuous drain current, 4.2mΩ typical RDS(on) at VGS = 10V, low gate charge, and fast switching performance in a D-Pak package.	Original	PDF
SLB_P120N08G3	Maplesemi	N-channel MOSFET with 85V drain-source voltage, 120A continuous drain current, 5.0mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and high avalanche energy endurance.	Original	PDF

120N0 Price and Stock

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Infineon Technologies AG BSC120N03MSGATMA1 MOSFET N-CH 30V 11A/39A TDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	BSC120N03MSGATMA1	Digi-Reel	20,299			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BSC120N03MSGATMA1	Cut Tape	20,299		1	1 $0.87 10 $0.54 100 $0.35 1000 $0.24 10000 $0.22	Buy Now
	BSC120N03MSGATMA1	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Avnet Americas	BSC120N03MSGATMA1	Reel			5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	BSC120N03MSGATMA1				3	1 - 10 $0.34 100 $0.34 1000 $0.34 10000 $0.33	Get Quote
Chip One Stop	BSC120N03MSGATMA1	Cut Tape	10,000	0 Weeks, 1 Days	5	1 - 10 $0.22 100 $0.17 1000 $0.17 10000 $0.17	Buy Now
Chip Stock	BSC120N03MSGATMA1		15,140			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	BSC120N03MSGATMA1		11,640			1 - 10 - 100 - 1000 $0.26 10000 $0.25	Buy Now
Infineon Technologies AG IAUC120N04S6N010ATMA1 MOSFET N-CH 40V 150A TDSON-8-34
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IAUC120N04S6N010ATMA1	Digi-Reel	14,779		1	1 $2.68 10 $1.73 100 $1.19 1000 $0.96 10000 $0.96	Buy Now
	IAUC120N04S6N010ATMA1	Cut Tape	14,779		1	1 $2.68 10 $1.73 100 $1.19 1000 $0.96 10000 $0.96	Buy Now
	IAUC120N04S6N010ATMA1	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.79	Buy Now
Avnet Americas	IAUC120N04S6N010ATMA1	Reel	240,000	26 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.93	Buy Now
Mouser Electronics	IAUC120N04S6N010ATMA1		2,279			1 $2.68 10 $1.60 100 $1.17 1000 $0.92 10000 $0.79	Buy Now
Newark	IAUC120N04S6N010ATMA1	Cut Tape	2,251		5	1 $3.00 10 $1.92 100 $1.49 1000 $1.49 10000 $1.49	Buy Now
Rochester Electronics	IAUC120N04S6N010ATMA1		677,698		1	1 - 10 - 100 $1.07 1000 $0.89 10000 $0.79	Buy Now

EBV Elektronik	IAUC120N04S6N010ATMA1			27 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Goford Semiconductor G120N03D32 MOSFET 2N-CH 30V 28A 8DFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	G120N03D32	Cut Tape	4,982		1	1 $0.79 10 $0.49 100 $0.32 1000 $0.22 10000 $0.20	Buy Now
	G120N03D32	Digi-Reel	4,982		1	1 $0.79 10 $0.49 100 $0.32 1000 $0.22 10000 $0.20	Buy Now
Vishay Intertechnologies SQM120N04-1M7L_GE3 MOSFET N-CH 40V 120A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQM120N04-1M7L_GE3	Reel	1,600		800	1 - 10 - 100 - 1000 $1.61 10000 $1.54	Buy Now
Avnet Americas	SQM120N04-1M7L_GE3	Bulk		25 Weeks	800	1 - 10 - 100 - 1000 $1.54 10000 $1.49	Buy Now
Chip Stock	SQM120N04-1M7L_GE3		5,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SQM120N04-1M7L_GE3			26 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Aces Electronics Co Ltd 59012-0120N-001 12P, 2.0MM PITCH WTB WAFER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	59012-0120N-001	Reel	1,000		500	1 - 10 - 100 - 1000 $0.68 10000 $0.61	Buy Now

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120N0 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng	PDF
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94	PDF
Mosfet 120n03ls Abstract: 120n03ls Contextual Info: 120N03LS G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 12.0 ID 39 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC120N03LS 120N03LS Mosfet 120n03ls 120n03ls	PDF
toy helicopter remote control circuit diagram Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power	Original	B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter	PDF
120N03MS Abstract: bsc120n03ms JESD22 Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel	Original	BSC120N03MS 120N03MS 120N03MS JESD22	PDF
Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS 30 V VGS=10 V 12 mW VGS=4.5 V 14 ID • 100% Avalanche tested 39 A PG-TDSON-8	Original	BSC120N03MS IEC61249-2-21 120N03MS	PDF
120N03MS Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel	Original	BSC120N03MS 120N03MS 120N03MS	PDF
120N06N Abstract: 120N06 Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06	PDF
120N03MS Abstract: BSC120N03MS IEC61249-2-21 JESD22 MS-100101 m9060 Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • 100% Avalanche tested	Original	BSC120N03MS IEC61249-2-21 120N03MS 120N03MS IEC61249-2-21 JESD22 MS-100101 m9060	PDF
120N06N Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G	PDF
30ct0045 Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m Contextual Info: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to	OCR Scan	200mV. 30ct0045 SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel	Original	BSC120N03MS 120N03MS	PDF
120N06N Abstract: 75F75 IPP120N06N 120n06 PG-TO220-3 Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - normal level 60 11.7 SMDversion ID 75 V m: A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N PG-TO220-3 PG-TO263-3 120N06N page10 120N06N 75F75 120n06 PG-TO220-3	PDF

120n03ls Abstract: Mosfet 120n03ls BSC120N03LS JESD22 BSC120N03LS G Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC120N03LS 120N03LS 120n03ls Mosfet 120n03ls JESD22 BSC120N03LS G	PDF
Mosfet 120n03ls Abstract: 120N03LS 120n03 BSC120N03LS JESD22 BSC120N03LS G Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC120N03LS 120N03LS Mosfet 120n03ls 120N03LS 120n03 JESD22 BSC120N03LS G	PDF
Mosfet 120n03ls Abstract: 120N03LS 120n03 BSC120N03LS IEC61249-2-21 JESD22 PG-TDSON-8 Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 12 mΩ • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level	Original	BSC120N03LS IEC61249-2-21 120N03LS Mosfet 120n03ls 120N03LS 120n03 IEC61249-2-21 JESD22 PG-TDSON-8	PDF

120N0 Search Results

120N0 Datasheets (20)

120N0 Price and Stock

Infineon Technologies AG BSC120N03MSGATMA1

Infineon Technologies AG IAUC120N04S6N010ATMA1

Goford Semiconductor G120N03D32

Vishay Intertechnologies SQM120N04-1M7L_GE3

Aces Electronics Co Ltd 59012-0120N-001

120N0 Datasheets Context Search

120N06N

IPB120N06N

Mosfet 120n03ls

toy helicopter remote control circuit diagram

120N03MS

120N03MS

120N06N

120N03MS

120N06N

30ct0045

7N60B equivalent

120N06N

120n03ls

Mosfet 120n03ls

Mosfet 120n03ls