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    120N03 Search Results

    120N03 Datasheets (9)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLM120N03T
    		Maplesemi N-Channel MOSFET with 30V drain-source voltage, 120A continuous drain current, and on-resistance of 2.6mΩ at VGS = 10V, utilizing advanced TRENCH technology for low conduction loss and high switching performance in TO-252 package. Original PDF
    badge JMTQ120N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.8mΩ at VGS=10V and 19.1mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. Original PDF
    badge JMTK120N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12.2mΩ at VGS = 10V and 20.5mΩ at VGS = 4.5V, featuring advanced trench technology, low gate charge, and TO-252-3L package. Original PDF
    badge JMTQ120N03D
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 14.3m ohm at VGS=10V and 21.7m ohm at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. Original PDF
    badge JMTV120N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and DFN2020-6L package. Original PDF
    badge SKCS120N03ZB
    		Shikues Semiconductor Low voltage applications: automotive, DC/DC converters, power management in portable/battery-operated products. N-Channel FET, DFN 3*3A-8L, VDS=30V, I=34A. Original PDF
    badge SLM120N03G
    		Maplesemi N-channel MOSFET with 30V drain-source voltage, 120A continuous drain current, 1.2 mΩ typical RDS(on) at VGS = 10V, and 1.6 mΩ at VGS = 4.5V, featuring low gate charge and fast switching performance. Original PDF
    badge SK120N03B
    		Shikues Semiconductor 30V N-Channel, RDS(ON) 3.7mΩ@VGS=10V, Low Gate Charge, Fast Recovery Diode, DC/DC Converters, Motor Switch, TO-252. Original PDF
    badge SLD120N03T
    		Maplesemi N-channel MOSFET with 30V drain-source voltage, 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, TO-252 package, suitable for PWM, load switch, and power management applications. Original PDF
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    120N03 Price and Stock

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    Infineon Technologies AG BSC120N03MSGATMA1

    MOSFET N-CH 30V 11A/39A TDSON
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    DigiKey () BSC120N03MSGATMA1 Cut Tape 20,099 1
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    BSC120N03MSGATMA1 Digi-Reel 20,099
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    BSC120N03MSGATMA1 Tape & Reel 15,000 5,000
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    Avnet Americas BSC120N03MSGATMA1 Tape & Reel 5,000
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    TME BSC120N03MSGATMA1 3
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    Win Source Electronics BSC120N03MSGATMA1 11,640
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    Infineon Technologies AG BSC120N03LSGATMA1

    MOSFET N-CH 30V 12A/39A TDSON
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    DigiKey () BSC120N03LSGATMA1 Digi-Reel 13,876 1
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    BSC120N03LSGATMA1 Cut Tape 13,876 1
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    BSC120N03LSGATMA1 Tape & Reel 10,000 5,000
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    Avnet Americas BSC120N03LSGATMA1 Tape & Reel 55,000 26 Weeks 5,000
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    Mouser Electronics BSC120N03LSGATMA1 1,172
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    Rochester Electronics BSC120N03LSGATMA1 56,360 1
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    TME BSC120N03LSGATMA1 1
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    Ameya Holding Limited BSC120N03LSGATMA1 155,000
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    EBV Elektronik BSC120N03LSGATMA1 155,000 27 Weeks 5,000
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    Goford Semiconductor G120N03D3

    MOSFET N-CH 30V 28A DFN3*3-8L
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    DigiKey () G120N03D3 Cut Tape 5,000 1
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    G120N03D3 Digi-Reel 5,000 1
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    G120N03D3 Tape & Reel 5,000 5,000
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    Goford Semiconductor G120N03D32

    MOSFET 2N-CH 30V 28A 8DFN
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    DigiKey () G120N03D32 Cut Tape 4,982 1
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    G120N03D32 Digi-Reel 4,982 1
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    PanJit Group PJB120N03S-AU_R2_002A1

    30V N-CHANNEL ENHANCEMENT MODE M
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    DigiKey () PJB120N03S-AU_R2_002A1 Tape & Reel 800 800
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    PJB120N03S-AU_R2_002A1 Digi-Reel 800 1
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    PJB120N03S-AU_R2_002A1 Cut Tape 800 1
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    120N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Mosfet 120n03ls

    Abstract: 120n03ls
    Contextual Info: 120N03LS G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 12.0 ID 39 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS Mosfet 120n03ls 120n03ls PDF

    120N03MS

    Abstract: bsc120n03ms JESD22
    Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		BSC120N03MS 120N03MS 120N03MS JESD22 PDF

    Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS 30 V VGS=10 V 12 mW VGS=4.5 V 14 ID • 100% Avalanche tested 39 A PG-TDSON-8


    Original     		BSC120N03MS IEC61249-2-21 120N03MS PDF

    120N03MS

    Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		BSC120N03MS 120N03MS 120N03MS PDF

    120N03MS

    Abstract: BSC120N03MS IEC61249-2-21 JESD22 MS-100101 m9060
    Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • 100% Avalanche tested


    Original     		BSC120N03MS IEC61249-2-21 120N03MS 120N03MS IEC61249-2-21 JESD22 MS-100101 m9060 PDF

    Contextual Info: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		BSC120N03MS 120N03MS PDF

    120n03ls

    Abstract: 120n03 Mosfet 120n03ls
    Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS on ,max 12 mW ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC120N03LS IEC61249-2-21 120N03LS 120n03ls 120n03 Mosfet 120n03ls PDF

    120n03ls

    Abstract: Mosfet 120n03ls BSC120N03LS JESD22 BSC120N03LS G
    Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS 120n03ls Mosfet 120n03ls JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS JESD22 BSC120N03LS G
    Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC120N03LS 120N03LS Mosfet 120n03ls 120N03LS 120n03 JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS IEC61249-2-21 JESD22 PG-TDSON-8
    Contextual Info: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 12 mΩ • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC120N03LS IEC61249-2-21 120N03LS Mosfet 120n03ls 120N03LS 120n03 IEC61249-2-21 JESD22 PG-TDSON-8 PDF