1202 TRANSISTOR Search Results
1202 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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1202 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1202 transistor
Abstract: Opto-Sensor transistor 1202 photo transistor photo interrupter 5mm 24V IR Sensor Aleph Aleph Opto-Sensor schematic photo sensor OJ-1202
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OCR Scan |
oj-1202/oj-1302oj-13d2oj-12020394inches+9 | |
KSR1202
Abstract: KSR2202
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OCR Scan |
ksr2202ksr1202o-92s-10na | |
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Contextual Info: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =10, R2=10K£1) • C om plem ent to KSR 1202 ABSOLUTE MAXIMUM RATINGS (TA=25°C) |
OCR Scan |
ksr2202 | |
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Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL DATA 2 SA 1202 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1202) 4.6MAX. Unit in mm 1.6MAX. 1.7MAX. 0.4 +0.05 PO W ER AM PLIFIER APPLICATIONS VOLTAGE AM PLIFIER APPLICATIONS • • Suitable for driver of 30~35 W atts Audio Amplifier |
OCR Scan |
2sa12022sc2882250mm | |
C4570
Abstract: AAAM SOT23-6 AAAM MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544
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max4543/max4544max323/max324/max325max4541/42/43ot23-8+9 | |
SOT23-6 AAAEContextual Info: 19-1202; Rev 2; 10/01 Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches _Applications _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low RON: 60Ω max 33Ω typ RON Matching Between Channels: 2Ω max |
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max4541max4544100pa150ns+3 | |
MAX4544EKA-T
Abstract: AAAM AAAM SOT23-6 MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544 SOT23-6 AAAE
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max4543/max4544max323/max324/max325max4541/42/43ot23-8+11 | |
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Contextual Info: 1713-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq40m | |
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Contextual Info: SL3ICS1002/1202 UCODE G2XM and G2XL Rev. 3.8 — 11 November 2013 139038 Product data sheet COMPANY PUBLIC 1. General description The UHF EPCglobal Generation 2 standard allows the commercialized provision of mass adoption of UHF RFID technology for passive smart tags and labels. Main fields of |
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sl3ics1002/1202 | |
EBV8
Abstract: RFID tag eeprom G2XM EC88 NXP EPC UCODE G2X NXP UCODE G2XM C source code EPCglobal crc-16 implementation SOT886.t1.t4 sot1122
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sl3ics1002/1202ebv8rfid tag eepromg2xm+7 | |
114406
Abstract: LM1202
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OCR Scan |
lm1202114406 | |
NXP G2XM EPC
Abstract: G2XM NXP EPC UCODE G2X NXP UCODE G2XM J122 transistor SOT1040AB2 SL3S1002FTT sot1122 SL3S1202FTB1 SOT-1122
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sl3ics1002/1202nxp g2xm epcg2xmnxp epc ucode g2x+7 | |
RFID preamble source code
Abstract: crc5 calculation EN330 G2XM impedance
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sl3ics1002/1202rfid preamble source codecrc5 calculationen330+1 | |
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Contextual Info: SL3ICS1002/1202 UCODE G2XM and G2XL Rev. 3.6 — 10 March 2011 139036 Product data sheet COMPANY PUBLIC 1. General description The UHF EPCglobal Generation 2 standard allows the commercialized provision of mass adoption of UHF RFID technology for passive smart tags and labels. Main fields of |
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sl3ics1002/1202 | |
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G2XM impedance
Abstract: SL3S1002FTT SL3ICS10 nxp rfid CRC16 15962 RFID protocol SOT1040 FM0 encoder IC SL3ICS1202
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sl3ics1002/1202g2xm impedancesl3s1002fttsl3ics10+7 | |
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Contextual Info: 1716-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq40mreq40m | |
HM62W4100HC
Abstract: HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358
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hm62w4100hcade-203-1202400-mil32-pin+4 | |
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Contextual Info: 1717-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq60m | |
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Contextual Info: 1714-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq40m | |
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Contextual Info: 1718-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq40mreq40m | |
AAAM SOT23-6
Abstract: MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544 SOT23-6 AAAE
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max4543/max4544max323/max324/max325max4541/42/43ot23-8+8 | |
L016
Abstract: Z86L82 Z86L85 Z86L88
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z86l82/85/8828-pinps009007-1202l016+3 | |
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Contextual Info: 1711-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq60m | |
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Contextual Info: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008806-1202 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition |
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z86l825/826/82720-pinps008806-1202 | |