1200V FAST Search Results

Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications

Contextual Info: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter

V23990-P629

Abstract: V23990-P629-F62-PM
Contextual Info: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode

Contextual Info: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at

Contextual Info: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at

SIDC08D120F6

Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:

MIMMG100S120B6UN

Contextual Info: MIMMG100S120B6UN 1200V 100A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current

MIMMG150D120B6UN

Contextual Info: MIMMG150D120B6UN 1200V 150A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current

SIDC06D120E6

Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:

SIDC03D120F6

Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:

SIDC03D120H6

Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

MIMMG75S120B6UN

Contextual Info: MIMMG75S120B6UN 1200V 75A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current

SIDC06D120E6

Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:

1200v 3A

Abstract: SIDC03D120H6
Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

SIDC06D120F6

Contextual Info: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:

SIDC03D120F6

Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:

SIDC08D120F6

Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:

MIMMG75HB120H6UN

Contextual Info: MIMMG75HB120H6UN 1200V 75A Four-Pack Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current

MOSFET 1200v 3a

Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Contextual Info: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with

1000V 20A transistor

Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Contextual Info: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30

4175M

Abstract: 4175
Contextual Info: Preliminary SIDC14D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC14D120F6 1200V IF 15A A This chip is used for:

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for: