1200V DIODE Search Results

Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications

Contextual Info: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter

V23990-P629

Abstract: V23990-P629-F62-PM
Contextual Info: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode

Contextual Info: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse

M81738FP

Abstract: half bridge driver
Contextual Info: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current

RUR15120

Contextual Info: RURP15120 Semiconductor 15A, 1200V Ultrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TQ-220AC • Operating Temperature. +175°C ANODE CATHODE • Reverse

M81019FP

Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
Contextual Info: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current

RHR75120

Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Contextual Info: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2

SIDC08D120F6

Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:

SIDC06D120E6

Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:

SIDC03D120F6

Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:

SIDC03D120H6

Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

SIDC06D120E6

Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:

1200v 3A

Abstract: SIDC03D120H6
Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

SIDC06D120F6

Contextual Info: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:

SIDC03D120F6

Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:

SIDC08D120F6

Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:

Contextual Info: XTRM Series XTR1K1210 HIGH-TEMPERATURE 10A, 1200V SIC SCHOTTKY DIODE FEATURES DESCRIPTION ▲ Reverse voltage up to 1200V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Positive temperature coefficient for safe operation and ease paralleling.

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES

Contextual Info: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

APT10035LLL

Abstract: APT15D120BCTG
Contextual Info: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR