1200V 3A Search Results

IGB03N120H2

Abstract: Mar03 IGP03N120H2 IGW03N120H2
Contextual Info: 1200V IGBT IGW03N120H2 IGB03N120H2 IGP03N120H2 • Designed for: SMPS Lamp Ballast ZVS-Converter • 2nd generation HighSpeed- Technology for 1200V applications offers: - tight parameter distribution - temperature stable behaviour - parallel switching capability

IKP03N120H2

Abstract: IKB03N120H2 IKW03N120H2
Contextual Info: 1200V IGBT IKW03N120H2 IKB03N120H2 IKP03N120H2 • Designed for: SMPS Lamp Ballast ZVS-Converter • 2nd generation HighSpeed- Technology for 1200V applications offers: - tight parameter distribution - temperature stable behaviour - parallel switching capability

igd-1-ep

Abstract: IGBT 1200V 1 GBT 400 A 1200V IHD 660
Contextual Info: IGBT Driver Boards IGBT Treiber control channels interface type V DC average/ peak v ISO V ]GM A size POUT W by for modules mounting mm*mm outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1

IGD-1-EP515

Abstract: IGD-1-DT515 IGD-1-DT2
Contextual Info: Click on outline no. IGBT Driver Boards V DC control type channels interface average/ peak V ISO I GM POUT size V A W mm*mm for modules outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1 ±8

SIDC03D120H6

Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

1200v 3A

Abstract: SIDC03D120H6
Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:

MOSFET 1200v 3a

Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Contextual Info: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with

GB05XP120K

Abstract: ntc 0833 igbt 50v 3a w306
Contextual Info: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

DT80A

Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF A This chip is used for:

A001

Abstract: SIDC03D120H6
Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF A This chip is used for:

2N120CN

Abstract: HGT1S2N120CN HGT1S2N120CNS9A HGTP2N120CN LD26 RHRD4120 TB334 igbt spice igbt spice model
Contextual Info: HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description • 13A, 1200V, TC = 25°C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine

CHIP SM 4108

Contextual Info: 1 9-0461; R e v 1, V M ^X IV k l 4 0 0 M H z , U ltra -L o w -D is to rtio n Op A m p s The M AX4108 delivers a 400M Hz unity-gain bandw idth w ith a 1200V/ js slew rate, while the MAX4109 provides a 225M H z gain b a n dw id th with a 1200V/ps slew rate.

marking codes fairchild

Abstract: 1200v 3A
Contextual Info: S3N 3A, 1200V Surface Mount Rectifier Features • Low Profile Package • Glass Passivated Junction. • High Breakdown Voltage Rating • UL Flammability Classification 94V-0 ELECTRICAL SYMBOL SMC/DO-214AB DEVICE MARKING CODE : S3N COLOR BAND DENOTES CATHODE

5A IGBT

Abstract: 1MB03D-120 1MBC03-120 IC100 1MB03
Contextual Info: 1MBC03-120,1MB03D-120, Molded IGBT 1200V / 3A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications

EN5321

Abstract: 2SC5265 2SC526 TA064 p60e
Contextual Info: Ordering number: EN5321 SAMYO No.5321 _ 2SC5265 i NPN Triple Diffused Planar Silicon Transistor Inverter-controlled Lighting Applications Features •High breakdown voltage Vcbo - 1200V . • High reliability (Adoption of HVP process).

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK lc Collector current. 150A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K lc Collector current. 150A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 5 Insulated Type

Diode B2x

Abstract: E80276 QM150DY-24K QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75

QM75DY-24

Abstract: E2-34 E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24 • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75

Diode B2x

Abstract: E80276 QM150DY-24BK QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750

E80276

Abstract: QM200HA-24
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-24 • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75

qm5hg-24

Abstract: TRANSISTOR 545 QM5hg
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • • • • IC Collector current . 5A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 5

G03H1202

Abstract: IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Contextual Info: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability