12 V 100W POWER AMP Search Results

1431T

Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

2N3440 2N5416 REPLACEMENT

Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

2N6214

Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

40362

Abstract: 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

1431T

Abstract: BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A P y = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

2N6179

Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

Contextual Info: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

MSCQ01

Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
Contextual Info: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

RD100HHF1

Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

GaN amplifier 100W

Contextual Info: TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier Applications • Radar Product Features     Functional Block Diagram Frequency Range: 3.1 – 3.6 GHz Pout: 50 dBm at PIN = 27 dBm Power Gain: 23 dB (at PIN = 27 dBm) PAE: 51 % CW 1 2 3 4 5

MGFC50G

Contextual Info: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers

OPA2674

Contextual Info: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

OPA2674

Contextual Info: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and

OPA2674

Abstract: opp film incoming procedure OPA2673 OPA2677 OPA2691 OPA3691 OPA691 THS6042
Contextual Info: OPA2673 OP A2 67 3 www.ti.com SBOS382D – JUNE 2008 – REVISED JANUARY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and

OPA2674

Contextual Info: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and

100w amplifier RD100HHF1

Abstract: rd100hHf1 100w RD100HHF1 RD100HHF1-101 RD100HH hf amplifier 100w
Contextual Info: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers

QFN-24

Abstract: THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT G993
Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

pO115

Contextual Info: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers