12 OHM REGISTER Search Results

Contextual Info: COMPONENTS LFU PLUG REVERSE POLARITY TNC FEMALE BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM •3 3" -6 6" -9 9" -12 12" -18 18" -24 24" ■XXX Custom Length in inches 24” Max Length MOUNTING HOLE REVERSE POLARITY TNC FEMALE BULKHEAD

Contextual Info: COMPONENTS LFU PLUG LFU PLUG 1.13mm COAX IMPEDANCE 50 OHM 50 OHM 50 OHM Standard Lengths •3 3" -6 6" -12 12" PLUG -.158 .090 =^OHS 1 PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX (949) 261-7451 ? WEB ADDRESS: www.pasternack.com

Contextual Info: COMPONENTS LFU PLUG REVERSE POLARITY MCX JACK BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM -3 3" -6 6" -9 9" -12 12" -18 18" -24 24" •XXX Custom Length in inches 24” Max Length LENGTH MEASURED FROM CONTACT TO CONTACT £ .350 1 190-56 UNS-2A

connectors FRB

Abstract: FRB connector
Contextual Info: COMPONENTS LFU PLUG REVERSE THREAD SMA FEMALE BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM -3 3" -6 6" -9 9" 12« -12 -18 18" 24- -24 •XXX Custom Length in inches 24” Max Length ,2 5 0 -3 6 UNS-2A MOUNTING HOLE REVERSE THREAD SMA FEMALE BULKHEAD

Contextual Info: COMPONENTS LFU PLUG MCX JACK BULKHEAD 1.13mm COAX IMPEDANCE 50 OHM 50 OHM 50 OHM Standard Lengths -6 6" •12 12" -18 18" r .195 T .177 MOUNTING HDLE MCX JACK BULKHEAD PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX (949) 261-7451

Contextual Info: SPECIAL PRODUCTS ISO-9001 .Registered, HIGH DENSITY PRECISION WIREWOUND MODULAR RESISTOR 0.305 <7 .74 0.1 1 0 2.79) W IN WIN 0.320 ( 8 . 12) SERIES 0.365 (9 .27) W IN II 0.1 ohm to 500K ohm For Low Cost & 0.3 watts at 85°C High Density Packaging 0.01% to 10% tolerance

AD5934

Contextual Info: Preliminary Technical Data 250KSPS 12 Bit Impedance Converter Network Analyzer AD5934 Magnitude = R 2 + I 2 FEATURES 50KHz Max Excitation Output Impedance Range .1k – 20M Ohm, 12-Bit Resolution System Clock provided via MCLK pin DSP Real and Imaginary Calculation FFT

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1
Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Title SJ05 , J05 bt A, V, 12 m, d rd, GR sist, anwer OSTs) utho eyrds terrpoon, minctor A, V, 12 The Discrete Products Operation of Intersil has developed a

crossover

Contextual Info: PRN 146/147 CALIFORNIA MICRO DEVICES ZERO OHM JUMPER ARRAY Features • Stable low resistance circuit interconnect • 10 or 12 jumpers/package • Saves board space and reduces assembly cost • Industry standard SOIC and QSOP SSOP packages Applications • Circuit Interconnect

TMOS E-FET

Contextual Info: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM

MTP3055V

Abstract: TMOS E-FET transistor MJ 122
Contextual Info: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM

Contextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate

mtd3055vl motorola

Abstract: CI 4609 369A-13 AN569 MTD3055V MTD3055VL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = ° 1 5 OHM N-Channel Enhancement-Mode Silicon Gate

TMOS E-FET

Abstract: AN569 MTD2955V SMD310
Contextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate

TMOS E-FET

Abstract: TMOS power FET AN569 MTD3055V SMD310
Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MT02955V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate

013 transistor

Abstract: MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N–Channel Enhancement–Mode Silicon Gate

2955V

Abstract: TD2955V
Contextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

AN569

Abstract: MTD12N06EZL SMD310 Zener Diode SOD-123, 6v
Contextual Info: MOTOROLA Order this document by MTD12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount or Insertion Mount Designer's MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTD1N80E SMD310
Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: From: DocuFACTSitn] Ph* 949-253-7438 To: 16038801932 .595 12:29pn p. B of 6 Model 6253 50 Ohm Cable Assembly With Insulated Push-On BNC Connectors Pomona 3.67 93.2 • 8-20-99 - * -LENGTH ± 5 (1 2 ,7 ) - • - POMONA 6 2 5 3 -C -* » ({ })

Contextual Info: PI3B16226 3.3V, Low Capacitance 12-Bit to 24-Bit Mux/DeMux NanoSwitch Features • • • • • • • • • • RON is 8-ohm typ. Pulldown on B Ports Low Power: 1mW Industrial Operation Temperature: –40ºC to 85ºC Near-Zero Propagation Delay

AN569

Abstract: MTD12N06EZL SMD310 7-14-C
Contextual Info: MOTOROLA Order this document by MTD12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET DPAK for Surface Mount or Insertion Mount MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM N−Channel Enhancement−Mode Silicon Gate