12 OHM REGISTER Search Results

Contextual Info: COMPONENTS LFU PLUG REVERSE POLARITY TNC FEMALE BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM •3 3" -6 6" -9 9" -12 12" -18 18" -24 24" ■XXX Custom Length in inches 24” Max Length MOUNTING HOLE REVERSE POLARITY TNC FEMALE BULKHEAD

Contextual Info: COMPONENTS LFU PLUG LFU PLUG 1.13mm COAX IMPEDANCE 50 OHM 50 OHM 50 OHM Standard Lengths •3 3" -6 6" -12 12" PLUG -.158 .090 =^OHS 1 PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX (949) 261-7451 ? WEB ADDRESS: www.pasternack.com

Contextual Info: COMPONENTS LFU PLUG REVERSE POLARITY MCX JACK BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM -3 3" -6 6" -9 9" -12 12" -18 18" -24 24" •XXX Custom Length in inches 24” Max Length LENGTH MEASURED FROM CONTACT TO CONTACT £ .350 1 190-56 UNS-2A

connectors FRB

Abstract: FRB connector
Contextual Info: COMPONENTS LFU PLUG REVERSE THREAD SMA FEMALE BULKHEAD RG178B/U IMPEDANCE 50 OHM 50 OHM Standard Lengths 50 OHM -3 3" -6 6" -9 9" 12« -12 -18 18" 24- -24 •XXX Custom Length in inches 24” Max Length ,2 5 0 -3 6 UNS-2A MOUNTING HOLE REVERSE THREAD SMA FEMALE BULKHEAD

Contextual Info: COMPONENTS LFU PLUG MCX JACK BULKHEAD 1.13mm COAX IMPEDANCE 50 OHM 50 OHM 50 OHM Standard Lengths -6 6" •12 12" -18 18" r .195 T .177 MOUNTING HDLE MCX JACK BULKHEAD PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX (949) 261-7451

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1
Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Title SJ05 , J05 bt A, V, 12 m, d rd, GR sist, anwer OSTs) utho eyrds terrpoon, minctor A, V, 12 The Discrete Products Operation of Intersil has developed a

TMOS E-FET

Contextual Info: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM

MTP3055V

Abstract: TMOS E-FET transistor MJ 122
Contextual Info: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM

Contextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate

TMOS E-FET

Abstract: TMOS power FET AN569 MTD3055V SMD310
Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM N–Channel Enhancement–Mode Silicon Gate

013 transistor

Abstract: MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N–Channel Enhancement–Mode Silicon Gate

2955V

Abstract: TD2955V
Contextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

AN569

Abstract: MTD12N06EZL SMD310 Zener Diode SOD-123, 6v
Contextual Info: MOTOROLA Order this document by MTD12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount or Insertion Mount Designer's MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: PI3B16226 3.3V, Low Capacitance 12-Bit to 24-Bit Mux/DeMux NanoSwitch Features • • • • • • • • • • RON is 8-ohm typ. Pulldown on B Ports Low Power: 1mW Industrial Operation Temperature: –40ºC to 85ºC Near-Zero Propagation Delay

Contextual Info: PRELIMINARY CALIFORNIA MICRO DEVICES PRN 146/147 ►► ► ►► ZERO OHM JUMPER ARRAY Featu res A p p lica tio n s • Stable low resistance circuit interconnect • 10 or 12 jumpers/package • Saves board space and reduces assembly cost • Industry standard SOIC and

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

2955v

Contextual Info: MOTOROLA Order this document by MTP2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 2955V TM OS V™ Pow er Field E ffect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

STK 425

Abstract: raw card PC133 registered reference design
Contextual Info: 184P DDR Registered DIMM Update IBM 184 Pin Registered DIMM Overview and Status JC-42.5 3/2000 Item #942.6 J4253009C.PRZ 1 REV02 IBM Agenda Agenda Product Updates/Rationale Industry Enablement Efforts Module Design Plans/Status Support Chip Definition/Status

Contextual Info: MULTIFUSE PTC RESETTABLE OVERCURRENT PROTECTOR RADIAL LEADED DEVICE • Resettable circuit protection ■ Cured, flame retardant epoxy polymer insulating material meets UL 94V-0 requirements ■ Bulk packaging, tape and reel and A m m o-Pak available "M u itifu s e ' is a registered trademark o f Bourns. Inc

integrated circuit BOSCH

Abstract: bosch pm6
Contextual Info: Stellaris LM4F232 Evaluation Board User ’s Manual EK-LM4F2 32-UM-02 Copyrig ht 201 2 Te xas In strumen ts Copyright Copyright © 2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments. ARM and

E1313A

Abstract: E1313-80001 strain gage programmable gain
Contextual Info: PDFINFO H5 5 8 2 - 0 1 32-Channel Scanning A/D Converter HP E1313A Technical Specifications ● ● ● ● ● ● 3-Slot, B-size, register based Comprehensive signal conditioning on board Flexible scanning/auto sequencing High-speed data transfers into controller

switching pattern for three phase matrix converter

Abstract: MTV018 SSB transmission note MTV018N MTV018N20 MTV018N24 full color dot matrix 8 x 8 myson mtv018
Contextual Info: MYSON TECHNOLOGY MTV018 Super On-Screen-Display FEATURES GENERAL DESCRIPTION • Horizontal sync input may be up to 120 KHz. • On-chip PLL circuitry up to 96 MHz. • Programmable horizontal resolutions up to 1524 dots per display row. • 942 bytes display registers to control full screen display.

DUAL H-bridge

Contextual Info: MPC17533 Product Summary Page Part Number Contains Register Keyword Login Basket Search Advanced | Parametrics Home | Products Applications Technologies Support Where to Buy Contact Us About Freescale Freescale > Analog > Power Actuation Solutions > H-Bridges and Configurable Switches > MPC17533