12 BSZ Search Results

FAZ-C4 equivalent

Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
Contextual Info: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures

3029 ifc arm

Abstract: Trident frc iso7816 sim AGERE DSP 0xE0000034 20-pin JTAG interface connector motorola isri wic 2T mc4053 Trident II
Contextual Info: Advance Data Sheet January 14, 2002 Trident Production Devices Trident 0.25 µm /Trident II (0.20 µm) 1 Features • Package options: — Trident (0.25 µm): 196-pin FSBGA. 12 mm x 12 mm. 0.8 mm ball pitch. — Trident II (0.20 µm): Package A: 196-pin FSBGA.

Contextual Info: BSZ0909NS OptiMOS Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL VDS • Low FOMSW for High Frequency SMPS RDS(on),max • 100% avalanche tested 34 V VGS=10 V 12 mW VGS=4.5 V 15 ID • Improved switching behaviour

PG-TSDSON-8

Abstract: 120P3N
Contextual Info: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications

120P3N

Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode
Contextual Info: BSZ120P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications

transistor C 2240

Abstract: IEC61249-2-21 JESD22 JESD22-A114
Contextual Info: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications

Contextual Info: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications

toy helicopter remote control circuit diagram

Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power

murata npo

Abstract: Murata
Contextual Info: FPGA Power Module 12V input, 8 Outputs at 2A to 8A Reference Design PRD1366 FEATURES Low cost Meet’s Specification for AVNET Mini Module Plus for Xilinx 7 series Kintex FPGA Hard wired turn on sequence High Efficiency >93% at full load 12 V input +/-10%

LT4320

Contextual Info: LT4320/LT4320-1 Ideal Diode Bridge Controller Description Features Maximizes Power Efficiency n Eliminates Thermal Design Problems n DC to 600Hz n 9V to 72V Operating Voltage Range n I = 1.5mA Typical Q n Maximizes Available Voltage n Available in 8-Lead (3mm x 3mm) DFN, 12-Lead

gigabyte g41

Abstract: siemens PMB 6610 transistor full 2000 to 2012 roland ic 1N191 transistor said horizontal tt 2222 schematic diagram of aoc monitor mod 4 c program with flowchart of countdown timer in 8051 BD2XXXX
Contextual Info: MftH'll \t/\H vSi V X T JJ ✓ Ar % 1 Overview 2 External Signals 3 Memory Map m n Reset 5 Clocks and Power Control 6 Core PowerPC Architecture Compliance 8 Instruction Execution Timing 9 Instruction Cache 10 Data Cache 11 Memory Management Unit 12 System Interface Unit

Contextual Info: LT4320/LT4320-1 Ideal Diode Bridge Controller Description Features Maximizes Power Efficiency n Eliminates Thermal Design Problems n DC to 600Hz n 9V to 72V Operating Voltage Range n I = 1.5mA Typical Q n Maximizes Available Voltage n Available in 8-Lead (3mm x 3mm) DFN, 12-Lead

semikron skkt 130

Abstract: 12 bsz
Contextual Info: SKKT 500, SKKH 500 VRS VRRM dv/ VDRM dt cr ITRMS (maximum values for continuous operation) 920 A V V V/µs ITAV (sin. 180; Tcase = 80 °C) 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E

semikron skkt 500/14

Abstract: IGD 001 semikron skkt skkt 40 12 semikron skkh skkh 500/16 skkt skkh skkt 1000 skkt 40
Contextual Info: SKKT 500, SKKH 500 VRS VRRM dv/ VDRM dt cr ITRMS (maximum values for continuous operation) 920 A V V V/µs ITAV (sin. 180; Tcase = 80 °C) 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E

BSZ340N08NS3 G

Abstract: IEC61249-2-21 JESD22 Marking d12 340n08
Contextual Info: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level

JESD22

Contextual Info: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level

Contextual Info: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level

Contextual Info: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level

340N08N

Abstract: Marking d12 JESD22 BSZ340N08NS3
Contextual Info: BSZ340N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level

060NE2L

Contextual Info: BSZ060NE2LS For OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter Server,VGA VDS • Very Low FOMQOSS for High Frequency SMPS RDS(on),max • Low FOMSW for High Frequency SMPS • Excellent gate charge x R DS(on) product (FOM)

BSZ520N15NS3

Abstract: marking 6B s4si 6B104 I6025 marking a6b
Contextual Info: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#

440N10N

Abstract: f66a BSZ440N10NS3 IEC61249-2-21 JESD22 BSZ440N10NS3 G
Contextual Info: BSZ440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 44 mΩ • Optimized for dc-dc conversion ID 18 A • N-channel, normal level PG-TSDSON-8 • Excellent gate charge x R DS(on) product (FOM)

440N10N

Abstract: BSZ440N10NS3 BSZ440N10NS3 G JESD22 BSZ440N10NS3G
Contextual Info: BSZ440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: Je]R BSZ520N15NS3 G TM  3 Power-Transistor Product Summary Features Q฀ AD:>:J65฀7@B฀54 54฀4@?F6BC:@? Q฀ 492?6=฀?@B>2=฀=6F6= V 9I )-( K R 9I"\[#$ZNd -* Z I9 *) 6 Q฀H46=6?D฀82D6฀492B86฀H฀R 9I"\[#฀AB@5E4D฀ )' Q฀&@G฀@? B6C:CD2?46฀R 9I"\[#