440N10N Search Results

440N10N

Abstract: BSZ440N10NS3 BSZ440N10NS3 G JESD22 BSZ440N10NS3G
Contextual Info: 440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

440N10N

Abstract: BSC440N10NS3 IEC61249-2-21 JESD22
Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion VDS 100 V RDS on ,max 44 mW ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

440N10N

Abstract: BSC440N10NS3 IEC61249-2-21 JESD22
Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: 440N10NS3 G $ *'#$%TM3 Power-Transistor Product Summary Features :฀ % :฀.2 +)8%$฀&-0฀$# $#฀#-,4%01)-, VDS 100 V RDS(on),max 44 m ID 18 A :฀ #(!,%*฀,-0+!*฀*%4%* PG-TDSON-8

440N10N

Contextual Info: 440N10NS3 G $ *'#$%TM3 Power-Transistor Product Summary Features : % 07*- 5 '!2% # (!0'% &- 0( '( &0% /3% ,# 7!.*)# !2)- ,1 :  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , VDS 100 V RDS(on),max 44 m# ID 18 A :  # (!,% * ,- 0+ !*% 4% * PG-TDSON-8 :  6# % *% ,2 '!2% # (!0'% 6R DS(on) product (FOM)

440N10N

Abstract: f66a BSZ440N10NS3 IEC61249-2-21 JESD22 BSZ440N10NS3 G
Contextual Info: 440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 44 mΩ • Optimized for dc-dc conversion ID 18 A • N-channel, normal level PG-TSDSON-8 • Excellent gate charge x R DS(on) product (FOM)

BSC440N10NS3

Abstract: JESD22 440N10N
Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)