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    440N10N Search Results

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    440N10N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSZ440N10NS3GATMA1

    MOSFET N-CH 100V 5.3A/18A TSDSON
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    DigiKey () BSZ440N10NS3GATMA1 Cut Tape 6,520 1
    • 1 $1.26
    • 10 $0.79
    • 100 $0.52
    • 1000 $0.36
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    BSZ440N10NS3GATMA1 Digi-Reel 6,520 1
    • 1 $1.26
    • 10 $0.79
    • 100 $0.52
    • 1000 $0.36
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    BSZ440N10NS3GATMA1 Tape & Reel 5,000
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    Avnet Americas () BSZ440N10NS3GATMA1 Tape & Reel 15,000 52 Weeks 5,000
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    BSZ440N10NS3GATMA1 Bulk 1
    • 1 $1.10
    • 10 $0.75
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    • 1000 $0.32
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    Mouser Electronics BSZ440N10NS3GATMA1 49,486
    • 1 $1.11
    • 10 $0.74
    • 100 $0.48
    • 1000 $0.31
    • 10000 $0.26
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    Newark BSZ440N10NS3GATMA1 Bulk 4,019 1
    • 1 $0.32
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    Bristol Electronics () BSZ440N10NS3GATMA1 214
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    BSZ440N10NS3GATMA1 20 1
    • 1 $0.90
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    Rochester Electronics BSZ440N10NS3GATMA1 310,794 1
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    • 100 $0.34
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    TME BSZ440N10NS3GATMA1 5,867 1
    • 1 $1.00
    • 10 $0.73
    • 100 $0.57
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    EBV Elektronik BSZ440N10NS3GATMA1 53 Weeks 5,000
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    Win Source Electronics BSZ440N10NS3GATMA1 26,810
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    Infineon Technologies AG BSC440N10NS3GATMA1

    MOSFET N-CH 100V 5.3A/18A TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () BSC440N10NS3GATMA1 Cut Tape
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    BSC440N10NS3GATMA1 Tape & Reel
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    Newark () BSC440N10NS3GATMA1 Cut Tape 5
    • 1 $1.87
    • 10 $1.22
    • 100 $0.84
    • 1000 $0.84
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    BSC440N10NS3GATMA1 Tape & Reel 5,000
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    Infineon Technologies AG BSZ440N10NS3 G

    MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSZ440N10NS3 G 77,285
    • 1 $1.17
    • 10 $0.73
    • 100 $0.48
    • 1000 $0.34
    • 10000 $0.31
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    Bristol Electronics BSZ440N10NS3 G 8,577
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    Infineon Technologies AG BSZ440N10NS3GATMA1.

    Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:29W; No. of Pins:8Pins RoHS Compliant: Yes
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    Newark BSZ440N10NS3GATMA1. Tape & Reel 5,000
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    Infineon Technologies AG BSZ440N10NS3G

    Trans MOSFET N-CH 100V 5.3A 8-Pin TSDSON EP T/R
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    Bristol Electronics BSZ440N10NS3G 8,777
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    ComSIT USA BSZ440N10NS3G 7,915
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    Win Source Electronics BSZ440N10NS3G 27,160
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    440N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    440N10N

    Abstract: BSZ440N10NS3 BSZ440N10NS3 G JESD22 BSZ440N10NS3G
    Contextual Info: 440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSZ440N10NS3 440N10N 440N10N BSZ440N10NS3 G JESD22 BSZ440N10NS3G PDF

    440N10N

    Abstract: BSC440N10NS3 IEC61249-2-21 JESD22
    Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion VDS 100 V RDS on ,max 44 mW ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC440N10NS3 IEC61249-2-21 440N10NS 440N10N IEC61249-2-21 JESD22 PDF

    440N10N

    Abstract: BSC440N10NS3 IEC61249-2-21 JESD22
    Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC440N10NS3 IEC61249-2-21 440N10NS 440N10N IEC61249-2-21 JESD22 PDF

    Contextual Info: 440N10NS3 G $ *'#$%TM3 Power-Transistor Product Summary Features :฀ % :฀.2 +)8%$฀&-0฀$# $#฀#-,4%01)-, VDS 100 V RDS(on),max 44 m ID 18 A :฀ #(!,%*฀,-0+!*฀*%4%* PG-TDSON-8


    Original     		BSC440N10NS3 440N10NS PDF

    440N10N

    Contextual Info: 440N10NS3 G $ *'#$%TM3 Power-Transistor Product Summary Features : % 07*- 5 '!2% # (!0'% &- 0( '( &0% /3% ,# 7!.*)# !2)- ,1 :  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , VDS 100 V RDS(on),max 44 m# ID 18 A :  # (!,% * ,- 0+ !*% 4% * PG-TDSON-8 :  6# % *% ,2 '!2% # (!0'% 6R DS(on) product (FOM)


    Original     		BSC440N10NS3 440N10NS 440N10N PDF

    440N10N

    Abstract: f66a BSZ440N10NS3 IEC61249-2-21 JESD22 BSZ440N10NS3 G
    Contextual Info: 440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 44 mΩ • Optimized for dc-dc conversion ID 18 A • N-channel, normal level PG-TSDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSZ440N10NS3 IEC61249-2-21 440N10N 440N10N f66a IEC61249-2-21 JESD22 BSZ440N10NS3 G PDF

    BSC440N10NS3

    Abstract: JESD22 440N10N
    Contextual Info: 440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC440N10NS3 440N10NS JESD22 440N10N PDF