11OCT04 Search Results
11OCT04 Datasheets Context Search
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Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ^ _ _ _ BY TYCO ELECTRONICS CORPORATION. - - DIST LOC ALL RIGHTS RESERVED. CE 16 R E V IS IO N S p LTR c DESCRIPTION REVISED PER 0 A 4 0 - 0 4 B 5 - 0 4 DATE DWN APVD 11OCT04 JW D JD |
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11oct041310nm31mar200004aproo+1 | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. GP DIST R E V IS IO N S 00 LTR A 3. 125.06 [4.924] REF' DATE REVISED PER EC OS1 1 - 0 0 0 9 - 0 5 MATERIAL: HOUSING AND EJECTOR: HIGH TEMPERATURE NYLON |
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00064t00102l110ct0423feb95 | |
mosfet switch circuit diagram
Abstract: s41519rev
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si6926aedqs-41519--rev11-oct-04mosfet switch circuit diagram+1 | |
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Contextual Info: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES |
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si6926aedq08-apr-05 | |
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Contextual Info: 194D Vishay Sprague Solid Tantalum Chip Capacitors MIDGET Conformal Coated FEATURES • 8mm, 12mm, 16mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3, 7” [178mm] standard. PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. |
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eia-481-1178mm50wvdcrs-481+1 | |
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Contextual Info: 255D Vishay Sprague Organic Polymer, Low ESR, Tantalum Capacitors Commercial, Surface Mount Capacitors for Switch Mode Power Supplies and Converters FEATURES • Conductive polymer cathode technology • Low ESR • No-ignition failure mode • EIA standard case sizes |
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10wvdc178mm330mmeia-481-1+1 | |
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Contextual Info: Si7220DN New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While |
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si7220dnsi7220dn-t1--e3s-41818--rev11-oct-04 | |
Si5404BDC-T1-E3
Abstract: SI5404BDC
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si5404bdcsi5404bdc-t1--e3s-41826--rev11-oct-04+1 | |
Si5404BDCContextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code |
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si5404bdcsi5404bdc-t1--e308-apr-05 | |
SQFP-48
Abstract: T6N 700 UCC5638
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sip563815-lineucc5638sqfp-48+4 | |
RISE3Contextual Info: WSZ Vishay Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power FEATURES ∑ Low cost, high power ∑ All welded construction ∑ Ceramic core ∑ Available on tape and reel STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING P25°C |
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e12/e241tc-1080ppm/k2180ppm/k+7 | |
Si5404BDCContextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code |
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si5404bdcsi5404bdc-t1--e318-jul-08 | |
MCT0603
Abstract: MCS 0402 AT - Precision
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11-oct-04mct0603mcs 0402 at - precision | |
SiP5678
Abstract: SQFP-48 UCC5638 T15N
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sip567815-lineucc5638sqfp-48+5 | |
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SiP5678
Abstract: SQFP-48 UCC5638
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sip567815-lineucc5638sqfp-48+3 | |
SQFP-48
Abstract: UCC5638 T5N 400
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sip563815-lineucc5638sqfp-48+4 | |
8409 diode
Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
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si8409dbsi8401dbsi8409db-t1--e108-apr-05+6 | |
T6N 700
Abstract: SQFP-48 UCC5628 t11N
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sip562814-lineucc5628sqfp-48+5 | |
SQFP-48
Abstract: UCC5628
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sip562814-lineucc5628sqfp-48+3 | |
T12P
Abstract: SiP5668 SQFP-48 UCC5628
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sip566814-lineucc5628sqfp-48+4 | |
diode 8409
Abstract: marking 8409 8409 diode
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si8409dbsi8401dbsi8409db-t1--e1s-41816--rev+4 | |
KDS 32kHZ crystal
Abstract: CRYSTAL 32.768KHz DATASHEET KDS KDS Crystals 32.768 KDS 70 Crystals quartz kds KDS oscillator KDS Crystals 8.192 kds 32.768 KDS Crystals KDS Crystals 32.768kHz
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m41t62m41t63m41t64m41t65+16 | |
KDS 32kHZ crystal
Abstract: M41T63 M41T62 M41T64 M41T65 VSOJ20
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m41t62m41t63m41t64m41t65+6 | |
top 8901
Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
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si8901dbsi8901db-t2--e3s-41820--rev11-oct-04+5 | |