11N60S5 Search Results

11N60S5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
11N60S5		Infineon Technologies	Cool MOS Power Transistor	Original	PDF	338.19KB	12

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Rochester Electronics LLC SPI11N60S5 N-CHANNEL POWER MOSFET
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DigiKey	SPI11N60S5	Bulk			176	1 - 10 - 100 - 1000 $1.70 10000 $1.70	Buy Now
Rochester Electronics LLC SPW11N60S5 N-CHANNEL POWER MOSFET
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Infineon Technologies AG SPW11N60S5FKSA1 MOSFET N-CH 600V 11A TO247-3
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Infineon Technologies AG SPI11N60S5BKSA1 MOSFET N-CH 600V 11A TO262-3
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Infineon Technologies AG SPB11N60S5ATMA1 MOSFET N-CH 600V 11A TO263-3
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11N60S5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60S5 Abstract: SPI11N60S5 Contextual Info: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1	Original	SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5	PDF
11N60S5 equivalent Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 Contextual Info: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760	PDF
SPW11N60S5 Abstract: 06161L 11N60S5 equivalent 11N60S5 Contextual Info: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38	Original	SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5	PDF
11N60S5 Abstract: SPW11N60S5 Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5	PDF
AR1010 Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010	PDF
Contextual Info: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5	PDF
11N60S5 equivalent Abstract: 11N60S5 SPW11N60S5 Contextual Info: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 equivalent 11N60S5 SPW11N60S5	PDF
11N60S5 Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 Contextual Info: 11N60S5 11N60S5, 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances	Original	SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5	PDF
11n60s Abstract: 11n60 SMD CASE footprint Contextual Info: 11N60S5 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint	PDF
IXAN0040 Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES Contextual Info: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power	Original	IXAN0040 D-10997 IXAN0040 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES	PDF
Contextual Info: SIEMENS 11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:	OCR Scan	SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239	PDF
Contextual Info: 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID	Original	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5	PDF
Contextual Info: 11N60S5, 11N60S5 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1	PDF
Contextual Info: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5	PDF

11N60S5 Abstract: SPI11N60S5 SPP11N60S5 Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 SPI11N60S5 SPP11N60S5	PDF
11N60S5 equivalent Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 Contextual Info: 11N60S5 Preliminary data 11N60S5, 11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·	Original	SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095	PDF
TRANSISTOR SMD MARKING CODE 7A Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06 Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06	PDF
siemens 350 98 Abstract: 11N60S5 SPW11N60S5 Contextual Info: 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 siemens 350 98 11N60S5	PDF
Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5	PDF
TRANSISTOR SMD MARKING CODE 7A Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5 Contextual Info: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5	PDF
CTX16-16926 Abstract: FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components Contextual Info: UCC28600 120-W Evaluation Module User's Guide October 2006 Power Supply MAN SLUU256A UCC28600 120-W Evaluation Module User's Guide Literature Number: SLUU256A August 2006 – Revised October 2006 User's Guide SLUU256A – August 2006 – Revised October 2006	Original	UCC28600 SLUU256A UCC28051 EIC61000-3-2 CTX16-16926 FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components	PDF
11n60s5 Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262-3 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262-3 11n60s5	PDF
Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262	PDF
Contextual Info: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5	PDF

11N60S5 Search Results

11N60S5 Datasheets (1)

11N60S5 Price and Stock

Rochester Electronics LLC SPI11N60S5

Rochester Electronics LLC SPW11N60S5

Infineon Technologies AG SPW11N60S5FKSA1

Infineon Technologies AG SPI11N60S5BKSA1

Infineon Technologies AG SPB11N60S5ATMA1

11N60S5 Datasheets Context Search

11N60S5

11N60S5 equivalent

SPW11N60S5

11N60S5

AR1010

11N60S5 equivalent

11N60S5

11n60s

IXAN0040

11N60S5

11N60S5 equivalent

TRANSISTOR SMD MARKING CODE 7A

siemens 350 98

TRANSISTOR SMD MARKING CODE 7A

CTX16-16926

11n60s5