11N40 Search Results

11N4

Abstract: 11N40
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for

11n40

Abstract: 200v 3A ultra fast recovery diode aa 118 diode 11n40l 219aa 11N40T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 400 V N-CHANNEL MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

11N400

Abstract: D202E
Contextual Info: E RECTROIU SEMICONDUCTOR THRU TECHNICAL SPECIFICATION 1M4W7G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-1.0 Ampere FEATURES: * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability

11N400

Contextual Info: Q RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-1.0 Ampere FEATURES: * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability * G lass passivated junction

1C501

Abstract: L5002 MIC5010AJ 4N35 applications
Contextual Info: MIC5010 Full-Featured High- or Low-Side MOSFET Driver General Description Features The M IC5010 is the full-featured member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The M IC5010 is

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

marking code dh fairchild

Abstract: g995 11n40 595D 11N40T FQPF11N40T
Contextual Info:


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