11FEB2009 Search Results

PBT/PBT GF15 connector

Abstract: PBT GF15 connector
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 RELEASED FOR PUBLICATION 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P A B D DESCRIPTION LTR C DATE DWN APVD FIRST ISSUE 11FEB2009 AV GT ADDED LOAD MARKS 07JUL2011 AV GT REVISED PER ECR-14-004322 27MAR2014 RS

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. P A A1 D DESCRIPTION LTR B C DATE DWN APVD FIRST ISSUE 11FEB2009 CHANGED RAW MTL ACC.TO UL REQUIREMENTS 30NOV2009 AV GT ADDED LOAD MARKS 07JUL2011

Contextual Info: OPA 348 OPA 348 OPA OPA 234 8 434 OPA348 OPA2348 OPA4348 8 SBOS213D – NOVEMBER 2001 – REVISED FEBRUARY 2009 1MHz, 45µA, CMOS, Rail-to-Rail OPERATIONAL AMPLIFIERS DESCRIPTION FEATURES LOW IQ: 45µA typical LOW COST RAIL-TO-RAIL INPUT AND OUTPUT SINGLE SUPPLY: +2.1V to +5.5V

STM32F103xxx

Abstract: STM32F10xxB stm32f102r8 STM32F102RB STM32F10xxx STM32F10* I2C stm32f103xxx manual ic ir 2112 STM32F10* I2C errata STM32F102x
Contextual Info: STM32F10xx8 and STM32F10xxB Errata sheet STM32F101x8/B, STM32F102x8/B and STM32F103x8/B medium-density device limitations Silicon identification This errata sheet applies to the revisions B, Z and Y of the STMicroelectronics mediumdensity STM32F101xx access line and STM32F103xx performance line products, and to

STM32F103VC

Abstract: STM32F103RC STM32F103xE STM32F10* I2C errata 548-72 STM32F103ZD USART STM32F101RC STM32F101RD stm32f103ve errata
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E high-density device limitations Silicon identification This errata sheet applies to the revisions Z and Y of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density

stm32f103z

Abstract: STM32F103VC STMICROELECTRONICS TOP making STM32F101VD STM32F103RC stm32f103vd STM32F103Ve STM32F103xE STM32F101RC ARM Cortex core
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E revision Z high-density device limitations Silicon identification This errata sheet applies to the revision Z of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density products. These families

STM32F10xxB

Abstract: Part Marking STMicroelectronics flash memory STM32F10* USB STM32F10* I2C errata USART3 STM32F103xxx ARM Cortex core Date Code Marking STMicroelectronics SMBus Specification V2.0 STMicroelectronics marking code date
Contextual Info: STM32F10xx8 and STM32F10xxB Errata sheet STM32F101x8/B, STM32F102x8/B and STM32F103x8/B medium-density device limitations Silicon identification This errata sheet applies to the revisions B, Z and Y of the STMicroelectronics mediumdensity STM32F101xx access line and STM32F103xx performance line products, and to

tj194

Abstract: Transistor SMD SM 942 smd code rc3 smd transistor marking BA1 TRANSISTOR SMD MARKING CODE dk AN1324 HE10 LQFP32 PDIP32S SMD TRANSISTOR MARKING 5c
Contextual Info: ST7LITE49K2 8-bit MCU with single voltage Flash memory, data EEPROM, ADC, 8/12/16-bit timers, SPI and I²C interface Features • ■ Memories – 8 Kbytes single voltage extended Flash XFlash program memory with Read-out protection In-circuit programming and in-application

GB10NB37LZ

Abstract: gb10nb37 IC 7402 Gb10nb37l gp10nb37lz 7402 ic description
Contextual Info: STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature TAB TAB 3 1 Applications ■ TO-220 2 1 3 D²PAK Automotive ignition

2STA1694

Abstract: 2STC4467
Contextual Info: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier

STD95N4LF3

Abstract: 95N4L
Contextual Info: STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK STripFET Power MOSFET Features Type VDSS RDS on max STD95N4LF3 40 V < 6.0 mΩ ID PD 80 A(1) 110 W 3 1. Value limited by wire bonding • 100% avalanche tested ■ Logic level drive 1 DPAK Applications ■

STM32F10xxB

Abstract: STM32F10* I2C errata STM32F103rb STM32F102R8 STM32F102RB STM32F103xxx USART3 STM32F10xxx reference manual registers STM32F102xx STM32F10xxx reference manual
Contextual Info: STM32F10xx8 and STM32F10xxB Errata sheet STM32F101x8/B, STM32F102x8/B and STM32F103x8/B medium-density device limitations Silicon identification This errata sheet applies to the revisions B, Z and Y of the STMicroelectronics mediumdensity STM32F101xx access line and STM32F103xx performance line products, and to

Contextual Info: STTS2002 2.3 V memory module temperature sensor with a 2 Kb SPD EEPROM Features • 2.3 V memory module temperature sensor with integrated 2 Kb SPD EEPROM ■ Forward compatible with JEDEC TSE 2002a2 and backward compatible with STTS424E02 ■ Operating temperature range:

STD95N4LF3

Abstract: STB95N4LF3 95N4LF3 95N4L
Contextual Info: STB95N4LF3 STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK, D2PAK STripFET III Power MOSFET Features RDS on max ID Type VDSS STD95N4LF3 40 V < 6.0 mΩ 80 A(1) 110 W STB95N4LF3 (2) 40 V < 6.0 mΩ 80 A PD 110 W 3 1. Value limited by wire bonding 100% avalanche tested

Contextual Info: STP16CPP05 Low voltage 16-bit constant current LED sink driver Datasheet - production data Description QSOP-24 TSSOP24 SO-24 TSSOP24 exposed pad Features • 16 constant current output channels • Adjustable output current through external resistor • Output current: 3-40 mA

TMS320Lx2403

Abstract: HV230Q PCA82C250 SN65HVD230Q SN65HVD230QD SN65HVD231Q SN65HVD231QD SN65HVD232Q SN65HVD232QD
Contextual Info: SN65HVD230Q SN65HVD231Q SN65HVD232Q SGLS117B – JUNE 2001 – REVISED APRIL 2002 3.3-V CAN TRANSCEIVERS D Available in Q-Temp Automotive FEATURES D Operates With a 3.3-V Supply D Low Power Replacement for the PCA82C250 D D D D D D D D D Footprint Bus/Pin ESD Protection Exceeds 15-kV HBM

cosmo 1010 817

Abstract: RM0008 Reference Manual STM32F2 RM0008 phillips sq10 amplifier stm32f105 stm32 encoder IC cosmo 1010 817 stm32 timer STM32F10xx
Contextual Info: RM0008 Reference manual STM32F101xx, STM32F102xx, STM32F103xx, STM32F105xx and STM32F107xx advanced ARM-based 32-bit MCUs Introduction This reference manual targets application developers. It provides complete information on how to use the STM32F101xx, STM32F102xx, STM32F103xx and

STM32F103T4

Abstract: STM32F101C6 STM32F10* USART RCCA STM32F103C6 STM32F102C4 cortex m3 instruction set STM32F103xxx STM32F10* I2C
Contextual Info: STM32F10xx4 and STM32F10xx6 Errata sheet STM32F101x4/6, STM32F102x4/6 and STM32F103x4/6 low-density device limitations Silicon identification This errata sheet applies to the revision A of the STMicroelectronics low-density STM32F101xx access line, STM32F102xx USB access line and STM32F103xx

WLCSP64

Abstract: STM32F103RC STM32F103xE STM32F103VC stm32f103ve errata STM32F10* I2C errata STM32F101RC STM32F101RD STM32F101VD STM32F101ZC
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E revision Z high-density device limitations Silicon identification This errata sheet applies to the revision Z of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density products. These families

Part Marking STMicroelectronics flash memory

Abstract: USART2 Marking STMicroelectronics Single digit week STM32F101C6 STM32F10xx6 STM32F10* I2C errata ARM Cortex core STM32F103T4 STM32F102C4 STM32F103C6
Contextual Info: STM32F10xx4 and STM32F10xx6 Errata sheet STM32F101x4/6, STM32F102x4/6 and STM32F103x4/6 low-density device limitations Silicon identification This errata sheet applies to the revision A of the STMicroelectronics low-density STM32F101xx access line, STM32F102xx USB access line and STM32F103xx

Contextual Info: ST7LITE49K2 8-bit MCU with single voltage Flash memory, data EEPROM, ADC, 8/12/16-bit timers, SPI and I²C interface Features • ■ Memories – 8 Kbytes single voltage extended Flash XFlash program memory with Read-out protection In-circuit programming and in-application

Contextual Info: 4 TH 1S DRAW 1NG 1S U N P U B L I S H E D . R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORAT 1O N . A L L COPYRIGHT 2009 RIGHTS 2 009 LOC R E V 1S 1O N S D I ST RE S E RV E D. p LTR D E S C R 1P T I O N G G1 -8 POS . MODULAR

STGW100N30

Abstract: A3303 c040 STGF100N30
Contextual Info: STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features • Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET technology ■ Peak collector current IRP = 330 A @ TC = 25 °C see Table 2 ■

GRM31CR71H475KA88B

Abstract: LED7706 LPS6235-682MLC STPS1L40M UMK325BJ106KM-T
Contextual Info: AN2809 Application note 6-row / 30-mA LED driver with boost converter for the backlight of LCD panels Introduction The LED7706 consists of a high-efficiency monolithic boost converter and six controlled current generators rows specifically designed to supply the LED arrays used in the