11DA2 Search Results

1A50V

Contextual Info: mssssssssssssssssssssssssssssss^^^^^ O N N E C T O R S - :- c 2 & 3 Pots 4 Pole B & 7 Pole S Pole 25 Pole 11DA250V a c Mo. 6 A 2 5 0 V a.QJdc. 3A 250V a.e./d.e 6 A 1S6V a c./d.c 1A50V a,c./di. dOmSi <2-9 pole < 5 » a {2$ pt>te} .

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY51V16100A Series •HYUNDAI 16Mx 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

404729S

Abstract: 4074729 PAS 32U diagrams hitachi ecu 404728
Contextual Info: H D 4 0 4 7 2 0 S e rie s Description The HD404720 Series is a 4-bit single-chip micro­ computer which incorporare five timers, two serial interfaces, an A/D converter, an input capture timer, and an output compare timer. It also includes a 32.768-kHz oscillator and low-power dissipation

BA516

Abstract: 8DA10 .11da2 11DA2
Contextual Info: . . u v i m v j i u n n A i u n i H Y 5 1 V 1 7 4 1 O A 4 M x 4 bj C M 0 S S e r ie s D R A M w ith W P B PRELIMINARY DESCRIPTION The H Y51V1741 OAis the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V1741 OA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide