CR10
Abstract: J-STD-020B M58WR128FB VFBGA56
Contextual Info: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)
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m58wr128ftm58wr128fb66mhzcr10+2j-std-020bvfbga56
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M29DW324D
Abstract: M76DW52004TA Stacked 4MB NOR FLASH
Contextual Info: M76DW52004TA M76DW52004BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot
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m76dw52004tam76dw52004ba32mbit256kb+5lfbga730020h225chm29dw324dstacked 4mb nor flash
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