119BUMP Search Results

GS88218

Abstract: GS88236
Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.

K9F2G08U0C

Abstract: G388 180I 88436B
Contextual Info: Preliminary GS88418/36B-200/180/166/150/133 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 119-Bump BGA Commercial Temp Industrial Temp Features LBO input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of

HM62G18512ABP-30

Abstract: HM62G18512ABP-33 HM62G18512ABP-40 SA10 SA13 SA14 SA18 SA283A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two

GS840E18A

Abstract: GS840E32A GS840E36A
Contextual Info: Preliminary GS840E18/32/36AT/B-190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation

Contextual Info: CY7C1361A CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz Fast OE access times: 3.5 ns and 4.0 ns

D-xxxV

Abstract: GS88237BB-200 GS88237BB-200V GS88237BB-250IV GS88237BB-250V
Contextual Info: GS88237BB/D-xxxV 119- & 165-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive

GS8644V18

Abstract: GS8644V18B GS8644V18B-250 GS8644V72
Contextual Info: Product Preview GS8644V18 B/E /GS8644V36(B/E)/GS8644V72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Data Output Register. Holding FT high places the RAM in

GS882Z18A

Abstract: GS882Z18AB-166 GS882Z18AB-200 GS882Z18AB-225 GS882Z18AB-250 GS882Z36A
Contextual Info: GS882Z18/36AB/D-250/225/200/166/150/133 119 & 165-Bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

GS88218A

Abstract: GS88218AB-200 GS88218AB-225 GS88218AB-250 GS88236A
Contextual Info: GS88218/36AB/D-250/225/200/166/150/133 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the

GS882Z18BB-150V

Abstract: GS882Z18BB-200V GS882Z18BB-250V
Contextual Info: GS882Z18/36B B/D -xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD

S 357

Abstract: GS815018AB-250 GS815018AB-300 GS815018AB-333 GS815018AB-357
Contextual Info: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

GS841E18A

Abstract: GS841E18AT-180 256k x 18 119bga TS/103/02 B180
Contextual Info: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application

TS 100-12

Abstract: GS840H18A GS840H18AT-150 GS840H18AT-166 GS840H18AT-180 GS840H32A GS840H36A B180
Contextual Info: GS840H18/32/36AT/B-180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation • 3.3 V +10%/–5% core power supply

13007B

Abstract: GS882V37A GS882V37AB-200 GS882V37AB-225 GS882V37AB-250
Contextual Info: GS882V37AB/D-250/225/200 119- and 165-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive

GS8162Z18B

Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

GS8322ZV18

Abstract: GS8322ZV18B GS8322ZV72
Contextual Info: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

GS8644Z

Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

GVT71256ZC36B-7.5

Abstract: CY7C1356A-100AC CY7C1356A GVT71512ZC18
Contextual Info: PRELIMINARY CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 200, 166, 133, and 100 MHz • Fast access time: 3.2, 3.6, 4.2, 5.0 ns

WED2ZL361MSJ35BC

Abstract: WED2ZL361MSJ38BC WED2ZL361MSJ42BC WED2ZL361MSJ
Contextual Info: WED2ZL361MSJ White Electronic Designs 1M x 36 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION n Fast clock speed: 250, 225, 200, 166, 150, 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an

CY7C1357A

Abstract: GVT71512ZB18
Contextual Info: 1CY7C1357A PRELIMINARY CY7C1355A/GVT71256ZB36 CY7C1357A/GVT71512ZB18 256Kx36/512Kx18 Flow-Thru SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 133, 117, and 100 MHz • Fast access time: 6.5, 7.0, 7.5, and 8.0 ns

GS73024A

Abstract: GS73024AB
Contextual Info: Preliminary GS73024AB BGA Commercial Temp Industrial Temp 128K x 24 3Mb Asynchronous SRAM Features 8, 10, 12 ns 3.3 V VDD 119-Bump Ball Grid Array Package • Fast access time: 8, 10, 12 ns • CMOS low power operation: 250/200/170 mA at minimum cycle time

Contextual Info: Preliminary GS8162ZV18A B/D /GS8162ZV36A(B/D)/GS8162ZV72A(C) 119, 165, & 209 BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM 350 MHz–150 MHz 1.8 V VDD 1.8 V I/O Features cycles. • NBT (No Bus Turn Around) functionality allows zero wait