119BALL Search Results

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

CY7C1361V25

Abstract: CY7C1363V25
Contextual Info: C Y 7 C 1 3 6 1 V 25 C Y 7 C 1 3 6 3 V 25 PRELIMINARY ~= C Y P H hbb = 256K x 36 / 512K x 18 Flowthrough SRAM Functional Description Features • Supports 113-MHz bus operations The CY7C1361V25 and CY7C1363V25 are 2.5v, 256K x 36 and 512K x 18 synchronous-flowthrough SRAM designed to

CY7C1355C

Contextual Info: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead

CY7C1382DV33-200BZI

Contextual Info: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation

Contextual Info: CY7C1352G 4-Mbit 256 K x 18 Pipelined SRAM with NoBL Architecture 4-Mbit (256 K × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)

IS61LPS102418A

Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

N18N1825F1B

Abstract: N18N1833F1B N18N3625F1B N18N3633F1B
Contextual Info: N18N1825F1B N18N1833F1B N18N3625F1B N18N3633F1B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture Features

IS61LPD51218A

Abstract: IS61LPD25636A IS61VPD25636A IS61VPD51218A
Contextual Info: ISSI IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

IS61LPS25632A

Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS64LF12832A-7

Abstract: is64lf12832a LF12836A E0108 IS61LF12836A-6.5B3
Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: CY7C1361A CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz Fast OE access times: 3.5 ns and 4.0 ns

Contextual Info: IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM MAY 2007 FEATURES DESCRIPTION • 100 percent bus utilization The 4 Meg 'NLF/NVF' product family feature high-speed, low-power synchronous static RAMs designed to provide

Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

CY7C1360C-250BGC

Abstract: CY7C1360C CY7C1362C CY7C1360C-166BZI
Contextual Info: CY7C1360C CY7C1362C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Pipelined SRAM Functional Description[1] Features • • • • • • • • • • • • • • • • Supports bus operation up to 250 MHz Available speed grades are 250, 200, and 166 MHz

Contextual Info: IS61NLP25636A/IS61NVP25636A IS61NLP51218A/IS61NVP51218A 256K x 36 and 512K x 18 9Mb, PIPELINE 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION JANUARY 2005 FEATURES DESCRIPTION • 100 percent bus utilization The 9 Meg 'NLP/NVP' product family feature high-speed,

CY7C1325G

Abstract: CY7C1325G-133AXC CY7C1325G-133AXI CY7C1325G-133BGC CY7C1325G-133BGI CY7C1325G-133BGXC CY7C1325G-133BGXI
Contextual Info: CY7C1325G PRELIMINARY 4-Mbit 256K x 18 Flow-Through Sync SRAM Functional Description[1] Features • 256K X 18 common I/O • 3.3V –5% and +10% core power supply (VDD) • 2.5V or 3.3V I/O supply (VDDQ) • Fast clock-to-output times — 6.5 ns (133-MHz version)

Contextual Info: IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A ISSI PRELIMINARY INFORMATION SEPTEMBER 2005 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM FEATURES DESCRIPTION • 100 percent bus utilization The 4 Meg 'NLF/NVF' product family feature high-speed,

CY7C1327B

Contextual Info: 327 CY7C1327B 256K x 18 Synchronous-Pipelined Cache RAM Features The CY7C1327B I/O pins can operate at either the 2.5V or the 3.3V level. The I/O pins are 3.3V tolerant when VDDQ=2.5V. • Supports 100-MHz bus for Pentium and PowerPC operations with zero wait states

CY7C1381B-100AI

Abstract: 381B CY7C1381B CY7C1381B-117AC CY7C1383B
Contextual Info: 381B CY7C1381B CY7C1383B 512 x 36/1M × 18 Flow-Thru SRAM Features • • • • • • • • • • • Fast access times: 7.5, 8.5, 10.0 ns Fast clock speed: 117, 100, 83 MHz Provide high-performance 3-1-1-1 access rate Optimal for depth expansion

80486 microprocessor block diagram and pin diagram

Abstract: CY7C1338B
Contextual Info: 338B CY7C1338B 128K x 32 Synchronous-Flow-Through 3.3V Cache RAM Features Functional Description • Supports 117-MHz microprocessor cache systems with zero wait states • 128K by 32 common I/O • Fast clock-to-output times — 7.5 ns 117-MHz version • Two-bit wraparound counter supporting either interleaved or linear burst sequence

CY7C1354C

Abstract: CY7C1356C
Contextual Info: CY7C1354C CY7C1356C 9-Mbit 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture Functional Description[1] Features • Pin-compatible and functionally equivalent to ZBT™ • Supports 250-MHz bus operations with zero wait states — Available speed grades are 250, 200, and 166 MHz

CY7C1327G

Abstract: CY7C1327G-250AXC CY7C1327G-250AXI CY7C1327G-250BGC CY7C1327G-250BGI CY7C1327G-250BGXC CY7C1327G-250BGXI
Contextual Info: CY7C1327G PRELIMINARY 4-Mbit 256K x 18 Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 256K x18 common I/O architecture • 3.3V core power supply • 3.3V / 2.5V I/O operation • Fast clock-to-output times

GVT71256ZC36B-7.5

Abstract: CY7C1356A-100AC CY7C1356A GVT71512ZC18
Contextual Info: PRELIMINARY CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 200, 166, 133, and 100 MHz • Fast access time: 3.2, 3.6, 4.2, 5.0 ns