165BALL Search Results

bzx 850

Abstract: bzx 850 30
Contextual Info: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

AS7C331MNTD32A

Abstract: AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A
Contextual Info: November 2004 AS7C331MNTD32A AS7C331MNTD36A 3.3V 1M x 32/36 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.2/3.5/3.8 ns

IS61QDB22M36

Abstract: D0-35 IS61QDB24M18
Contextual Info: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 2) Synchronous SRAMs . A May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Two echo clocks (CQ and CQ) that are delivered

IS61DDB21M36

Abstract: 61DDB22M18 IS61DDB22M18-300M3L IS61DDB22M18 IS61DDB22M18-250M3LI
Contextual Info: 36 Mb 1M x 36 & 2M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . I May 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late

D0-35

Abstract: IS61QDB42M36 IS61QDB42M36-300M3 IS61QDB44M18 IS61QDB44M18-300M3
Contextual Info: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 4) Synchronous SRAMs 7 Q . May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

IS61QDB41M36

Abstract: 61QDB41M36 IS61QDB41M36-250M3L D0-35 IS61QDB41M36-250M3 IS61QDB42M18
Contextual Info: 36 Mb 1M x 36 & 2M x 18 QUAD (Burst of 4) Synchronous SRAMs . I April 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.

IS61LPD51236A

Abstract: IS61LPD102418A IS61VPD102418A IS61VPD51236A
Contextual Info: IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: CY7C1460AV25 CY7C1462AV25 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

CY7C1355C

Contextual Info: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead

CY7C2663KV18

Abstract: CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC
Contextual Info: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports

CY7C25442KV18

Abstract: CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems
Contextual Info: CY7C25442KV18 72-Mbit QDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency with ODT Features • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency

Contextual Info: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:

Contextual Info: CY7C2642KV18/CY7C2644KV18 144-Mbit QDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT Features • Separate independent read and write data ports

Contextual Info: CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth

Contextual Info: CY7C1163KV18/CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports

Contextual Info:  CY7C1143KV18/CY7C1145KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • Separate independent read and write data ports

Contextual Info: CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 36-Mbit density 2 M x 18, 1 M × 36 CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth

Contextual Info: CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.0 cycles:

CY7C1620KV18-250BZXC

Contextual Info: CY7C1618KV18, CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture 144-Mbit DDR II SRAM Two-Word Burst Architecture Features Configuration • 144-Mbit density 8 M x 18, 8 M × 36 CY7C1618KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth

Contextual Info: CY7C2168KV18/CY7C2170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36)

Contextual Info: CY7C1243KV18/CY7C1245KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions

CY7C1382DV33-200BZI

Contextual Info: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation

CY7C1570KV18

Contextual Info: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles: