115UM Search Results

Contextual Info: Red LED Chip OPA6917 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA

OPA5816

Contextual Info: Yellow LED Chip OPA5816 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition

Contextual Info: Red LED Chip OPA6916 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA

Contextual Info: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit

OPA5627

Contextual Info: Standard Green LED Chip OPA5627 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition

Contextual Info: TM8723 4 Bit Microcontroller GENERAL DESCRIPTION The TM8723 is an embedded high-performance 4-bit microcomputer with LCD/LED driver. It contains all the necessary functions, such as 4-bit parallel processing ALU, ROM, RAM, I/O ports, timer, clock generator, dual clock, EL light, LCD driver, look-up table, watchdog

Contextual Info: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit

Contextual Info: Yellow LED Chip OPA5816 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition

Contextual Info: Orange LED Chip OPA6316H GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit

FMM5056

Abstract: FMM5056X ED-4701 eudyna an
Contextual Info: Preliminary FMM5056X 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Frequency Band: 5.8 - 7.2 GHz ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5056X is a MMIC amplifier that contains a four-stage

Contextual Info: Yellow Green LED Chip OPA5616H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition

TM8723

Contextual Info: TM8723 4 Bit Microcontroller GENERAL DESCRIPTION The TM8723 is an embedded high-performance 4-bit microcomputer with LCD/LED driver. It contains all the necessary functions, such as 4-bit parallel processing ALU, ROM, RAM, I/O ports, timer, clock generator, dual clock, EL light, LCD driver, look-up table, watchdog

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: Pure Green LED Chip OPA5516 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition

OPA5536

Abstract: 564nm
Contextual Info: Pure Green LED Chip OPA5536 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition

8550b

Abstract: 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B
Contextual Info: 8550B 8550B Silicon PNP Epitaxial Transistor Description :The 8550B is designed for use in 2W output amplifier of portable radios in class B push-pull operation Features: ●Excellent hFE Linearity ●Complementary to 8050B Chip Appearance Chip Size 580umx580um

Contextual Info: Red LED Chip OPA6916 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA

hx8312

Contextual Info: DOC No. HX8312-A-DS HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Version 05 March, 2006 HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents March, 2006

10667G

Abstract: ADN2843CHIPSET
Contextual Info: a 10.709Gb/s LASER DIODE DRIVER Chipset ADN2843 Preliminary Technical Data FEATURES Data Rates from 50Mb/s to 10.709Gb/s Typical rise/fall time 25/23 ps Bias Current range 3mA to 80 mA Modulation Current range 5mA to 80 mA µA to 1100µ µA Monitor Photo Diode current 50µ

sanko MOTOR

Abstract: Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: Aluminum Electrolytic Capacitors Conductive Polymer Hybrid Aluminum Electrolytic Capacitors Capacitor Business Division Automotive & Industrial Systems Company, Panasonic Co., Ltd. −0− Contents

ED-214IR

Contextual Info: ED-214IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 335 320 n-Electrode n-AlGaAs epi layer n-Electrode 255 115 335 p-AlGaAs epi layer Emission area p-Electrode

x260

Contextual Info: ED-011SGU GaP/GaP LED Chips Standard-Green Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 255 n-GaP Substrate Emission area

Contextual Info: Point Light Source LED Chip OPA6530S1 GaAsP/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF

Contextual Info: Pure Green LED Chip OPA5516 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition