113 MARKING CODE TRANSISTOR Search Results

113 marking code PNP transistor

Abstract: SOT89 MARKING CODE 16 transistor marking code AL marking code sot-89 AA marking AE SOT-89 Marking al pnp
Contextual Info: Central" BCX51 BCX52 BCX53 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

113 marking code PNP transistor

Abstract: transistor GTO BC856T 113 marking code transistor
Contextual Info: Central“ BC856T SERIES BC857T SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

Contextual Info: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V   IC = 1A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = 2A Peak Pulse Current  UL Flammability Classification Rating 94V-0

marking code 22n sot23

Abstract: DMN2230U-7 J-STD-020D
Contextual Info: DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V

marking code 22n sot23

Abstract: DMN2230U-7
Contextual Info: DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V

Contextual Info: DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance

ZUA SOT23

Contextual Info: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

ZCA TRANSISTOR

Abstract: marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142
Contextual Info: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

Contextual Info: DTA143Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 4.7kΩ 47kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

ST IGBT code marking

Abstract: TO-220AB transistor package 113 marking code transistor TO220AB IGBT NAT 3 transistor b 647 transistor
Contextual Info: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter

ST IGBT code marking

Abstract: irf 345 TO-220AB transistor package TRANSISTOR marking ar code
Contextual Info: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz

On semiconductor date Code sot-223

Abstract: 6382 tRANSISTOR CZT75 5648 marking transistor marking code 443
Contextual Info: CZT751 SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT751 type is a PNP Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

Contextual Info: Philips Semiconductors 3 31 0023545 075 bbS T Silicon n-channei dual gate MOS-FETs FE A T U R E S APX Product specification N ANER PHILIPS/DISCRETE L7E D BF901; BF901R Q U IC K R E F E R E N C E DATA • Intended for low voltage operation • Short channel transistor with high

transistor Bc 82

Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time

Contextual Info: A Product Line of Diodes Incorporated ZXTD2090DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 50V • • IC = 1A High Continuous Current • Case Material: Molded Plastic, “Green” Molding Compound •

marking FA

Abstract: BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Marking Code ss3

Abstract: TWO 2SA1037K marking t109 marking code va transistors Transistors mark UMx1 2SC2412KX2 pre amp 2SA1037KX2
Contextual Info: TTTTHJ T r a n s is t o r s < S u r f a c e M ounted T v p e s > ROHM CO LTD SbE D • TflEfl'm 000b'}7tl SS3 ■ R H U [6 pin type including independent 2 circuits] Two transistors are contained in 2125 and 2916 type packages. The two circuits are independent of each other.

113 marking code PNP transistor

Abstract: TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA

Contextual Info: A Product Line of Diodes Incorporated ZXTD09N50DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 50V IC = 1A high Continuous Current High gain RSAT = 160mΩ for Low Equivalent On Resistance

transistor d619 data

Abstract: d619 transistor d619
Contextual Info: A Product Line of Diodes Incorporated ZXTD09N50DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 50V • • IC = 1A High Continuous Current • Case Material: Molded Plastic, “Green” Molding Compound •

Contextual Info: A Product Line of Diodes Incorporated ZXTD2090E6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 50V • • • IC = 1A High Continuous Current High Gain Hold Up hFE > 200 @ IC = 0.5A • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound

BFR340T

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!