110NH Search Results

Contextual Info: DigitalTelecom Features Quad Port DS3 Module • • • • • • • • Part Number 51582R Turns Ratio 1:1 Electrical Characteristics Inductance at 25°C 100uH Min. Inductance at -40°C 55uH Min. Leakage Inductance 110nH max. Interwinding Capacitance 10pF max.

235nH

Contextual Info: SMT Power Inductors Power Beads - PA3136.XXXHL Series Current Rating: Over 90Apk Inductance Range: 110nH to 235nH Height: 4.0mm Max Footprint: 13.8mm x 8.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 8 Inductance 1

PDSO-G24 Package

Abstract: PDSO-G24
Contextual Info: DigitalTelecom Features Three Port DS3 PDSO-G24 • • • • • • • • • Part Number 51772R Turns Ratio 1:1 Electrical Characteristics Inductance at 25°C 100uH Min. Inductance at -40°C 40uH Min. Leakage Inductance 110nH max. Interwinding Capacitance 10pF max.

Contextual Info: SMT Power Inductors Power Beads - PA3136.XXXHL Series Current Rating: Over 90Apk Inductance Range: 110nH to 235nH Height: 4.0mm Max Footprint: 13.8mm x 8.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 8 Inductance 1

PDSO-G24 Package

Contextual Info: DigitalTelecom Features Three Port DS3 PDSO-G24 • • • • • • • • • Part Number 51772R Turns Ratio 1:1 Electrical Characteristics Inductance at 25°C 100uH Min. Inductance at -40°C 40uH Min. Leakage Inductance 110nH max. Interwinding Capacitance 10pF max.

Contextual Info: DigitalTelecom Features Quad Port DS3 Module • • • • • • • • Part Number 51582R Turns Ratio 1:1 Electrical Characteristics Inductance at 25°C 100uH Min. Inductance at -40°C 55uH Min. Leakage Inductance 110nH max. Interwinding Capacitance 10pF max.

Contextual Info: 855035 140 MHz SAW Filter Applications General Purpose For IF applications Product Features Functional Block Diagram Top view Typical 1dB bandwidth of 0.47 MHz Low loss High Attenuation Single-ended operation Ceramic Surface Mount Package SMP Small Size

2482S

Abstract: mm1167 LQG15HS27NJ02 MURATA VCO Series 2.4GHz Cordless Phone circuit diagram CHOKE RF 1206 LQH MURATA LQH55DN102M03 LQH66SN100M03 LQH32MN1R5 SMD MARKING CODE N03
Contextual Info: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.

transistor BD 222 SMD

Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Contextual Info: ACT337 Rev 2, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant voltage, constant current CV/CC regulation without the need of an opto-coupler or reference

51299R

Contextual Info: DigitalTelecom Features DS3 Transformers PDSO-G6 • • • • • • • • • Schematic 1 Schematic 2 Schematic 3 Schematic 4 Turns Inductance @25°C Part Number Ratio 100kHz, 100mVAC 50963R 1:1 40µH min. 50964R 2CT:1 19µH min. 1:1.2 40µH min.

LQN21A

Abstract: LQN4N LQS66C LQN6C470M04 lqh4c PACKAGE LQH3C100K24 LQH3C101K34 LQG21F lqn6cr27m04 LQN21A33NJ04
Contextual Info: This is the PDF file of catalog No.O05E-5. No.O05E5.pdf 00.3.15 CHIP COIL CHIP COIL Murata Manufacturing Co., Ltd. Cat.No.O05E-5 This is the PDF file of catalog No.O05E-5. No.O05E5.pdf 00.3.15 Murata's LQ- series of chip coils consists of compact, highperformance inductors. Their innovative coil and case

smd transistors 3ks

Abstract: murata ceramic filter 55d 330 micro henry CHOKE RF 1206 LQH MURATA LQW15AN6N8G00 LQP18MN39NG02 LQH32 LQH55DN101M03 LQM21FN4R7N00 LQG15HN2N4S02
Contextual Info: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specifications before ordering.

LTC5569

Abstract: LTC5583
Contextual Info: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES n n n n n n n n n n n n DESCRIPTION High IIP3: 26.8dBm at 1950MHz 2dB Conversion Gain Low Noise Figure: 11.7dB at 1950MHz 17dB NF Under 5dBm Blocking 44dB Channel Isolation Low Power: 3.3V/600mW Total

MLG1005S10NJ

Abstract: MLG0603S5N6S VP-2941A HP4291A MLG0603S MLG1005S47NJ MLG1005S27NJ
Contextual Info: Multilayer Chip Inductors For High-frequency Circuits And Modules, MLG series 0603S type Conforming to RoHS Directive Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and

c225 diode smd

Abstract: SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243
Contextual Info: National Semiconductor RD-179 High Speed Signal Path Applications October 8, 2009 1.0 Design Description 2.0 Features The SP16160CH1RB demonstrates a high-IF sampling receiver subsystem that provides signal amplification, digitization and clocking as used in wireless infrastructure systems.

LQG15HN3N3S02

Abstract: LQG15HN1N0S02 LQG15HN1N1S02 LQG15HN1N2S02 LQG15HN1N3S02 LQG15HN1N6S02 LQG15HN1N8S02 LQG15HN10NJ02 LQG15HS27NJ02 LQG18HN10NJ00
Contextual Info: O05E11.pdf 04.3.8 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

SAFCC433M

Abstract: MLX71120 531946 MLX71121 SAW 433MHZ PCB transistor j145 XS 71120
Contextual Info: Application Note Receivers MLX71120/21 With LNA1-SAW-LNA2 configuration Designing with MLX71120 and MLX71121 receivers using a SAW filter between LNA1 and LNA2 Scope Many receiver applications, especially those for automotive keyless entry systems require good

AC adapter 19V

Abstract: r305 finger print module CONN60_ITP-XDP MOSFET BA8 SMSC1021 quanta cn137 max8724 ICS CK410M max8736
Contextual Info: 5 4 3 2 1 OT1 BLOCK DIAGRAM CPU CORE P37 CPU Thermal Sensor Intel ULV Peutium-M / ULV Celeron-M D MAX6657 ULV Yonah / ULV Celeron +1.05V/+1.5V_A P36 DC/DC 3V & 5V 479 Pins Micro-FCBGA DISCHARGE/+2.5V P32 D ICS CK410-M XDP P5,6 CONN60_ITP-XDPP5 HyperThansport I/O BUS

Contextual Info: HIGH CURRENT FP1308 FLAT-PAC 1308 FP1308 Series FLAT-PAC™ High Current Power Inductors Description RoHS 2002/95/EC • 125°C maximum total temperature operation • 12.9mm x 13.7mm x 8.0mm surface mount package • High current handling capability, compact footprint

723 voltage regulator

Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10007 R1 P1 MBM400E25E Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: Preliminary Data Sheet Part Number 855915 249.6 MHz SAW Filter Features • • • • • • • For 3G applications Usable bandwidth of 3.84 MHz High attenuation Single-ended operation at 50Ω Ceramic Surface Mount Package SMP Small size Package Pin Configuration

723 voltage regulator

Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.