110N10PS Search Results

IXFH110N10P

Abstract: 110N10P
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ

IXFV110N10P

Abstract: PLUS220SMD 110N10P IXFH110N10P
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches