1108A Search Results
1108A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TMCS1108A1BQDRQ1 |
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AEC-Q100, ±100-V isolated Hall-effect current sensor with internal reference 8-SOIC -40 to 125 |
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TMCS1108A2UQDR |
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±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 |
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TMCS1108A3BQDT |
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±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 |
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TMCS1108A2BQDRQ1 |
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AEC-Q100, ±100-V isolated Hall-effect current sensor with internal reference 8-SOIC -40 to 125 |
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TMCS1108A1BQDR |
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±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 |
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1108A Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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1108A | Voltage Multipliers | Single Phase Bridge, 70nS, 150nS, 3000nS Recovery | Scan | 66.35KB | 2 | ||
1108AFA | Voltage Multipliers | Single Phase Bridge, 70nS, 150nS, 3000nS Recovery | Scan | 66.35KB | 2 | ||
1108AUFA | Voltage Multipliers | Single Phase Bridge, 70nS, 150nS, 3000nS Recovery | Scan | 66.35KB | 2 |
1108A Price and Stock
Texas Instruments TMCS1108A1BQDRQ1CURRENT SENSOR HE 45A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1108A1BQDRQ1 | Digi-Reel | 33,076 | 1 |
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TMCS1108A1BQDRQ1 | 2,161 |
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Texas Instruments TMCS1108A1UQDRQ1SENSOR CURRENT HALL EFFECT 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1108A1UQDRQ1 | Cut Tape | 9,570 | 1 |
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TMCS1108A1UQDRQ1 | 2,382 |
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Texas Instruments TMCS1108A4BQDRSENSOR CURRENT HALL EFFECT 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1108A4BQDR | Digi-Reel | 4,338 | 1 |
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TMCS1108A4BQDR | 2,243 |
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STMicroelectronics TS110-8A1-APSCR 800V 1.25A TO92 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS110-8A1-AP | Cut Tape | 3,687 | 1 |
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TS110-8A1-AP | 2,868 | 1 |
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TS110-8A1-AP | 1 |
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TS110-8A1-AP | 10,000 | 17 Weeks | 2,000 |
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Texas Instruments LMK1C1108APWR1.8V,2.5V OR 3.3V ASYNCHRONOUS 8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LMK1C1108APWR | Reel | 3,000 | 3,000 |
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LMK1C1108APWR | 2,100 |
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1108A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY V rwM = IE = 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult sales office. 2 0 0 -1 0 0 0 V |
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150nS 3000nS 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA | |
1108a
Abstract: TCXO
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AN-XA32CXXX-X AN-XA32CXXX 17x14x6mm 1108a TCXO | |
Hitachi DSA0076
Abstract: 2SC4462
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2SC4462 ADE-208-1108A Hitachi DSA0076 2SC4462 | |
Hitachi DSA002751Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit) ADE-203-1108A (Z) Rev. 1.0 Aug. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable |
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HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I ADE-203-1108A HN58X24xxI 32-byte 58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Hitachi DSA002751 | |
Contextual Info: Data Sheet 1108A CRYSTAL OSCILLATORS AN-XA32CXX-X Series HF SMD TCXO Ultra Low Phase Noise Rev. - Description: The AN-XA32CXX Series of SMD temperature compensated crystal oscillators TCXO , provides High Frequency with excellent temperature stability, extremely |
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AN-XA32CXX-X AN-XA32CXX 17x14x6mm | |
Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword x 8-bit) 32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) HITACHI ADE-203-1108A (Z) Rev. 1.0 Aug. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable |
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HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I ADE-203-1108A HN58X24xxI 32-byte 58X2408I/HN58X2416I/HN58X2432I/HN58X2464I | |
1102FA
Abstract: 1102UFA 1104FA 1104UFA 1106FA 1106UFA 1108FA 1108UFA 1110FA 1110UFA
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150nS 3000nS 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110FA 1110UFA | |
Contextual Info: 1108A Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1 |
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Voltage800 Current40u | |
x80SContextual Info: SONY. 1108AQ-L/AQ-Y Laser Driver D e s crip tio n The C XB 1108A Q -L/A Q -Y is an ultra high speed monolithic Laser Driver/Current Switch Circuit with ECL input level. Open collector output is provided a t the output pin and has a capability of driving modulation current of |
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CXB1108AQ-L/AQ-Y CXB1108AQ-L CXB1108AQ-Y CX81I08AQ-L/AQ-Y 16pin 108AQ-L/AQ-Y 108AQ-Y x80S | |
ALLEN-BRADLEY RESISTOR network
Abstract: ALLEN-BRADLEY RESISTOR ALLEN-BRADLEY RESISTOR NETWORKS Allen-Bradley resistors ALLEN-BRADLEY RESISTOR array ALLEN-BRADLEY RESISTOR temperature 270 ALLEN-BRADLEY RESISTOR temperature marking 206a 408A103 EC5410-4
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CEE 32A plug
Abstract: CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A
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D-57399 I-10090 D-09465 CEE 32A plug CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A | |
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
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mepco capacitor
Abstract: MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher
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CL061 CL-C-FA032 CL062 CL063 CL081 CL082 mepco capacitor MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher | |
EDE1108ACSE
Abstract: EDE1116ACSE
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EDE1104ACSE EDE1108ACSE EDE1116ACSE EDE1104ACSE) EDE1108ACSE) EDE1116ACSE) 60-ball EDE1104/1108ACSE) 84-ball EDE1108ACSE EDE1116ACSE | |
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EDE1116ACBG_8E_E
Abstract: EDE1116ACBG EDE1108ACBG EDE1116ACBG-8E-E 1108A EDE1116ACBG-8E EDE1116AC
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EDE1104ACBG EDE1108ACBG EDE1116ACBG EDE1104ACBG) EDE1108ACBG) EDE1116ACBG) 60-ball EDE1104/1108ACBG) 84-ball EDE1116ACBG_8E_E EDE1116ACBG EDE1108ACBG EDE1116ACBG-8E-E 1108A EDE1116ACBG-8E EDE1116AC | |
Device Name 23 330 A1 6C
Abstract: EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE
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EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball Device Name 23 330 A1 6C EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE | |
Contextual Info: AN ALO G DEVICES Micropower DC-DC Converter Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1108 FEATURES Operates at Supply Voltages From 2.0 V to 30 V Consumes Only 110 p.A Supply Current Step-Up or Step-Down Mode Operation Minimum External Components Required |
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ADP1108 ADP11 | |
EDE1108ACSE
Abstract: EDE1116ACSE
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EDE1104ACSE EDE1108ACSE EDE1116ACSE EDE1104ACSE) EDE1108ACSE) EDE1116ACSE) 60-ball EDE1104/1108ACSE) 84-ball EDE1108ACSE EDE1116ACSE | |
optocoupler 450
Abstract: OPTOCOUPLER dc optocoupler IL SL5505S
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711Gfl2b SL5505S SL5505S OT97F optocoupler 450 OPTOCOUPLER dc optocoupler IL | |
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ACSE 256M words x 4 bits 1108ACSE (128M words × 8 bits) EDE1116ACSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDE1104ACSE) |
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EDE1104ACSE EDE1108ACSE EDE1116ACSE EDE1104ACSE) EDE1108ACSE) EDE1116ACSE) 60-ball EDE1104/1108ACSE) 84-ball | |
EDE1108ABSE-6EContextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE 256M words x 4 bits 1108ABSE (128M words × 8 bits) EDE1116ABSE (64M words × 16 bits) Features • Density: 1G bits • Organization 32M words × 4 bits × 8 banks (EDE1104ABSE) 16M words × 8 bits × 8 banks (1108ABSE) |
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EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball EDE1108ABSE-6E | |
EDE1108ABSE-6E-EContextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE 256M words x 4 bits 1108ABSE (128M words × 8 bits) EDE1116ABSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization 32M words × 4 bits × 8 banks (EDE1104ABSE) |
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EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball EDE1108ABSE-6E-E | |
Gate Turn-off Thyristor 100V 1000AContextual Info: Y50KAD HIGH FREQUENCY THYRISTOR Features: Interdigitated amplifying gates Fast turn-on and high di/dt n Low switching losses n Short turn-off time n Hermetic metal cases with ceramic insulators Typical Applications n Inductive heating n Electronic welders |
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Y50KAD KT50cT Gate Turn-off Thyristor 100V 1000A | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
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