1106 DIODE Search Results

MAA5

Contextual Info: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528F3C Material λD P (nm) Lens Type KM2520F3C03 Po Iv (m mW cd/s)r) View ing @ @2300m mA A*5500m mA A Angle Min. Typ. Dimension 2θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear

Contextual Info: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528AF3C Material λP (nm) Lens Type KM2520F3C03 Po (mW/sr) View ing @20mA *50mA Angle Min. Typ. Dimension 2θ θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear 0.4 1.2 70° KPL-3015SF4C

IR21834

Abstract: irs2183 application note IR2183 IRS218 IRS21834 IRS2183 AN-1106 AN1106
Contextual Info: Application Note AN-1106 IRS218 3,34 and IR218(3,34) Comparison By Jason Nguyen, Min Fang, David New Table of Contents Page Introduction .1 Block Diagrams .2

3015SF

Contextual Info: K ingbright INFRARED EMITTING DIODES KP-3015F3C Part No. KPA-3010F3C Material Wave­ length nm Lens Type KM2520A01F3C001 Po(mW/sr) @20mA *50mA Min. Typ. Viewing Angle Dimension 2q1/2 3.0mm x 1.5mm (1106) POLARITY MARK KP-3015F3C GaAs 940 water clear 0.8

Contextual Info: MAD 1106 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 Switching Diode Array FEATURES • • • 8 Isolated lines of protection Common Anode Standard 14 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL

Contextual Info: AN-1106 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com An Improved Topology for Creating Split Rails from a Single Input Voltage by Kevin Tompsett INTRODUCTION

Z8F1622

Abstract: Z8*6421 Z8F642 TAG 8648
Contextual Info: High Performance 8-Bit Microcontrollers Z8 Encore! 64K Series Product Specification PS019917-1106 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.zilog.com This publication is subject to replacement by a later edition. To determine whether

IGCT

Abstract: snubber IGCT
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters

42r2

Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

snubber IGCT

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters

MAX534BCP

Contextual Info: JVMÏXAJVl 8 -B if 19-1106;Rev0;8/96 +5V, Low-Power, Q uad DAC w ith R ail-to-R ail O utput B uffers _ Applications Features ♦ +4.5V to +5.5V Single-Supply Operation ♦ Ultra-Low Supply Current: 0.8mA while Operating 2.5|jA in Shutdown Mode

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

Diode XA 1106

Contextual Info: AN-1106 应用笔记 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com 由单一输入电压实现分离供电轨的改进拓扑结构 作者 ：Kevin Tompsett 简介 对该转换器的工作原理及使用 ADI 公司 ADP161x 的实现方

MAD130

Abstract: MAD1103 MAD1104 MAD1105 MAD1106 MAD1107 MAD1108 MAD1109 1108V 1106 diode
Contextual Info: Diode Arrays Motorola has the following selection of diode arrays to meet requirements in applications. These devices are in the popular S014 and S 016 packages. They have the same electrical performance as the standard DIP packages. MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

LT1560ED

Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Contextual Info: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551

B540

Abstract: on B540 SP6136 Si3434DV SP6136ER1 22UF-16V
Contextual Info: DESIGN SOLUTION # 51 Solved by TM SP6136 Boost Regulator: 12V Input to 18V @ 0-2A Output Designed by: Shahin Maloyan Part Number: SP6136ER1 Application Description: High-voltage Point-of-Load Electrical Requirements: Input Voltage Output Voltage Output Current

D1103

Contextual Info: SURFACE MOUNT DIODE ARRAYS MMAD130 MM AD 1103 These d io d e a rrays are m u ltip le d io d e ju n c tio n s fa b rica ted b y a p la n a r p ro ­ cess and m o u n te d in in te g ra te d c irc u it packages fo r use in h ig h -c u rre n t, fa s t-s w itc h in g co re -d rive r a pp licatio n s. These arrays o ffe r m a n y o f th e

D1109

Abstract: D1103 6 PIN TRANSISTORS 566
Contextual Info: SURFACE MOUNT DIODE ARRAYS MMAD130 MMAD1103 These diode arrays are m ultiple diode junctions fabricated by a planar pro­ cess and m ounted in integrated circuit packages fo r use in high-current, fast-sw itching core-driver applications. These arrays offer many o f the

VF7-41F11-C05

Abstract: C2241 v23134
Contextual Info: Plug-In Relays Mini ISO Relays Catalog 1308028 Revision 11-06 Power Relay F7 / VF7 Powertrain Systems Revision 03-05 Chassis Systems Safety Security Body Driver Information Convenience Description Features – Limiting continuous current 70 A – Dimensional characteristics

D4457N

Abstract: D2228N D448N D5807N D758N d4457n m3.2
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro

QT114-ISG

Abstract: 1N4150 850C BAV99 QT110 QT114 QT114-DG soil moisture sensor capacitive sensor soil moisture 1106AS
Contextual Info: QT114 lQ QLEVEL SENSOR IC Limit sensing of almost any fluid or powder Two-tier level sensor - Hi / Low limits with one probe Only one external part required - a 5¢ capacitor Uses internal probes or external electrodes Active high or active low outputs

n 1106 s

Contextual Info: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •