1106 DIODE Search Results
1106 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
1106 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MAA5Contextual Info: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528F3C Material λD P (nm) Lens Type KM2520F3C03 Po Iv (m mW cd/s)r) View ing @ @2300m mA A*5500m mA A Angle Min. Typ. Dimension 2θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear |
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kpl-3015f3cka-3528f3ckm2520f3c03kpl-3015sf4c+3 | |
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Contextual Info: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528AF3C Material λP (nm) Lens Type KM2520F3C03 Po (mW/sr) View ing @20mA *50mA Angle Min. Typ. Dimension 2θ θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear 0.4 1.2 70° KPL-3015SF4C |
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kpl-3015f3cka-3528af3ckm2520f3c03kpl-3015sf4c+3 | |
220v AC voltage stabilizer schematic diagram
Abstract: rjh 3047 equivalent WECO 1502 connection drawing transistor equivalent rjh 3047 str 1265 smps power supply circuit of tv transistor a950 MTK 6252 weco 602 connection drawing 8140 SOURIAU weco 1502 cap drawing
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220v ac voltage stabilizer schematic diagramrjh 3047 equivalentweco 1502 connection drawingtransistor equivalent rjh 3047+6 | |
IR21834
Abstract: irs2183 application note IR2183 IRS218 IRS21834 IRS2183 AN-1106 AN1106
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an-1106irs218ir218ir21834+5 | |
3015SFContextual Info: K ingbright INFRARED EMITTING DIODES KP-3015F3C Part No. KPA-3010F3C Material Wave length nm Lens Type KM2520A01F3C001 Po(mW/sr) @20mA *50mA Min. Typ. Viewing Angle Dimension 2q1/2 3.0mm x 1.5mm (1106) POLARITY MARK KP-3015F3C GaAs 940 water clear 0.8 |
OCR Scan |
kp-3015f3ckpa-3010f3ckm2520a01f3c001kp-3015sf4c+4 | |
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Contextual Info: MAD 1106 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 Switching Diode Array FEATURES • • • 8 Isolated lines of protection Common Anode Standard 14 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL |
OCR Scan |
400ma500mwmad1106100ma+1 | |
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Contextual Info: AN-1106 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com An Improved Topology for Creating Split Rails from a Single Input Voltage by Kevin Tompsett INTRODUCTION |
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an-1106adp161xme3220-102mlbadp1613+1 | |
Z8F1622
Abstract: Z8*6421 Z8F642 TAG 8648
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ps019917-1106z8f1622z8*6421z8f642+1 | |
IGCT
Abstract: snubber IGCT
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03d4501ch-5600igctsnubber igct | |
42r2
Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
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OCR Scan |
200a2scb-33100a2scb-227+11 | |
42R2
Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
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OCR Scan |
200a2scb-33100a2scb-227+11 | |
snubber IGCTContextual Info: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters |
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03d4501ch-5600snubber igct | |
MAX534BCPContextual Info: JVMÏXAJVl 8 -B if 19-1106;Rev0;8/96 +5V, Low-Power, Q uad DAC w ith R ail-to-R ail O utput B uffers _ Applications Features ♦ +4.5V to +5.5V Single-Supply Operation ♦ Ultra-Low Supply Current: 0.8mA while Operating 2.5|jA in Shutdown Mode |
OCR Scan |
max53412-bitmax534bcp | |
42R2
Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
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OCR Scan |
200a2scb-33100a2scb-227+12 | |
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
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m1ma151at1m1ma151kt1m1ma152at1m1ma152kt1+16 | |
MAD130
Abstract: MAD1103 MAD1104 MAD1105 MAD1106 MAD1107 MAD1108 MAD1109 1108V 1106 diode
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OCR Scan |
mad130mad1103mad1104mad1105+8 | |
BC327 BC337 noise figure
Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
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m1ma151at1m1ma151kt1m1ma152at1m1ma152kt1+13 | |
LT1560ED
Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
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OCR Scan |
gl1f20gl380ql381gl382+16 | |
B540
Abstract: on B540 SP6136 Si3434DV SP6136ER1 22UF-16V
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sp6136sp6136er1600khzca95035+4 | |
D1103Contextual Info: SURFACE MOUNT DIODE ARRAYS MMAD130 MM AD 1103 These d io d e a rrays are m u ltip le d io d e ju n c tio n s fa b rica ted b y a p la n a r p ro cess and m o u n te d in in te g ra te d c irc u it packages fo r use in h ig h -c u rre n t, fa s t-s w itc h in g co re -d rive r a pp licatio n s. These arrays o ffe r m a n y o f th e |
OCR Scan |
d1103 | |
D1109
Abstract: D1103 6 PIN TRANSISTORS 566
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OCR Scan |
d1109d11036 pin transistors 566 | |
VF7-41F11-C05
Abstract: C2241 v23134
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vf7-41f11-c05c2241v23134 | |
D4457N
Abstract: D2228N D448N D5807N D758N d4457n m3.2
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d448nd758nd2228nd4457n+2 | |
QT114-ISG
Abstract: 1N4150 850C BAV99 QT110 QT114 QT114-DG soil moisture sensor capacitive sensor soil moisture 1106AS
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qt114qt114-isg1n4150850c+6 | |