snubber IGCT
Abstract: ABB Semiconductors 5SYA1106-02
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters
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03d45015sya1106-02ch-5600snubber igct+1abb semiconductors
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snubber IGCT
Contextual Info: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters
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IGCT
Abstract: snubber IGCT
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters
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5SDF01R2501
Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes
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01r250105d250115f250220h2501+925h250130j250120h450211f250103d45015sdf01r25015sga5sga30j2501rtk 031
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ABB GTO
Abstract: stud type diodes fjs 500
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.
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05d250111f2s0145x100abb gto+2stud type diodesfjs 500
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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diode sy 17026l45035shx 14h4502kn11+235l4535l450
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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15f250205d250101r250120h2501+1211f250125h2501abb 5sga2sh25gto abbgto gate drive unit2sh2501tjm 105sga 20h2501abb gtor25015sga 15f2502
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GTO thyristor Curve properties
Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by
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30j450235l4502gto thyristor curve propertiesabb 5sgy 35l4502+8abb 5sgygto thyristor abbsnubber igctabb gto gate unitgto dc converter abbgto thyristor driverigct abbdiode ds1
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FSV 052
Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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