1101 TRANSISTOR Search Results

intel 1101

Abstract: intel processor transistor count inferno os PS/2 touchpad StrongARM SA-1100 EPOC32 IEEE1284 SA-1101 intel 27817 microprocessor mouse circuit diagram
Contextual Info: Intel StrongARM® SA-1101 Microprocessor Companion Chip Brief Datasheet Product Features The Intel® StrongARM®SA-1101 Microprocessor Companion Chip SA-1101 allows developers to utilize a cost-effective and power-efficient solution for portable applications. The SA-1101, when coupled with the

2SD2395

Abstract: 2SB1566 B350
Contextual Info: Transistors 2SB1566 2SD2395 94L-459-B350 (94L-1101-D350) 296

Contextual Info: 1100 Series Metal Tester Model 1101-C Thermoelectric Alloy Sorter Free Test Service Non-destructive tester ◆ Seebeck Effect thermocouple principle ◆ Precision Magnetic Amplifiers Description Principles of Operation Acromag’s Model 1101-C Thermoelectric Metal

FBD15

Abstract: D14-251 KPY10 KPY12 KPY14 SA-1101 intel 27823 intel DOC FBA11 FBD10
Contextual Info: Intel StrongARM® SA-1101 Microprocessor Companion Chip Specification Update September 1999 Notice: The Intel® StrongARM® SA-1101 microprocessor companion chip may contain design defects or errors known as errata. Characterized errata that may cause the product to deviate

theory on 5V unipolar STEPPER MOTOR

Abstract: dac MC1408 Sample and Hold Amplifiers HCTL-1101#PLC Encoder interface with HCTL-1100 hctl-1101 hctl1101 5v 1.8 deg stepper motor UDN2954
Contextual Info: HCTL-1101 General Purpose Control ICs. Data Sheet Description Features The HCTL-1101 series is a high performance, general purpose motion control IC, fabricated in Avago CMOS technology. It frees the host processor for other tasks by performing all the time-intensive functions of digital

1101 Static RAM

Contextual Info: TMS 1101 JC. TM S 1101 NC 256-BIT RANDOM-ACCESS MEMORY features • Low power dissipation • 600-nsec access time typ . 750 nsec (max) • Direct O T L and T T L compatibility • Wire-OR capability • Fully decoded on chip • Inputs fully protected •

ALD1101MA

Abstract: 1101a 1101B
Contextual Info: ADVANCED LINEAR DEVICES I " m \ S3E D • DESbQfi3 D000211 5^1 ■ A dvanced |/L J A LD 1101A /A L D 1101B /A L D 1101 d e vices D U A L N -C H A N N EL M A TCH ED M O S F E T P AIR GENERAL DESCRIPTION \ PIN CONFIGURATION The ALD 1101 is a monolithic dual N-channel matched transistor pair

7B222

Abstract: DTL or TTL integrated logic circuits 110T 256-BIT DTL 950 texas instruments DTL logic
Contextual Info: MOS LSI TMS 1101 JC, TMS 1101 NC 256-BIT RANDOM-ACCESS M EM ORY featu es Low pow er dissipation 600-nsec access tim e typ , 750 nsec (max) D irect D T L and T T L co m p atib ility W ire-OR cap ab ility F u lly decoded on chip Inputs fu lly protected Data O u t and Data O ut available

Contextual Info: KSR2101 FNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >4.7, R jM T H l) • Complement to KSR 1101 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t)

SA-1101

Abstract: intel 27817 intel 27823 intel DOC
Contextual Info: StrongARM*SA-1101 Microprocessor Companion Chip Specification Update October 1998 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published

arm microprocessor data sheet

Abstract: SA-1101 intel DOC
Contextual Info: StrongARM SA-1101 Microprocessor Companion Chip Specification Update February 1999 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published

marking d7k

Abstract: KSR1101 KSR2101
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2101 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=4.7K£i) • C om plem ent to K S R 1101 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

SA-1101

Abstract: intel 27823 intel DOC
Contextual Info: StrongARM SA-1101 Microprocessor Companion Chip Specification Update January 1999 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published

gefran 200 -2r

Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
Contextual Info: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English

Contextual Info: P35-1101-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

design ideas

Abstract: sod110 land BP317 SC-89
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210

Contextual Info: P35-1101-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

transistor 2N3906 smd 2A SOT23

Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: urm LT 1101 TECHNOLOGY Precision, M icropower, Single Supply Instrum entation Am plifier Fixed G ain =10 or 100 D C S C A IP T IO A F€ ATU R € S • Gain Error ■ Gain Non-Linearity ■ Gain Drift ■ Supply Current ■ Offset Voltage ■ Offset Voltage Drift

14CL 40

Abstract: ET1102 et 1102 HFET-1101 HFET-1102 2N6680 HPAC-100A HFET1102 14cl ET 2314
Contextual Info: NEW 2N6680 H E W L E T T PACKARD HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz a HIGH OUTPUT POWER

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 1= B 2=C 3= E Package 4 n.c. 5 = C

Contextual Info: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP II LD CO Q62702-A3473 II s1G o SMBTA 06M Pin Configuration CM Ordering Code II Marking 0Û Type Package